Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR SOT23 2A Search Results

    TRANSISTOR SOT23 2A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23


    Original     		PDF FMMT491Q J-STD-020 MIL-STD-202, DS37009

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23


    Original     		PDF FMMT591Q J-STD-020 DS37010

    FMMT634

    Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


    Original     		PDF FMMT634 625mW FMMT734 100mA 100ms 100us FMMT634 IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701

    Untitled

    Abstract: No abstract text available
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


    Original     		PDF FMMT634 625mW FMMT734 100mA 100us

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound


    Original     		PDF FMMT491 500mW FMMT591 AEC-Q101 DS33091

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP2041F 40V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -40V   IC = -1A High Continuous Current   ICM = -2A Peak Pulse Current Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound


    Original     		PDF ZXTP2041F -500mV ZXTN2040F AEC-Q101 DS33721

    Untitled

    Abstract: No abstract text available
    Text: DSS20200L 20V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -20V • • IC = -2A Continuous Collector Current • • ICM = -4A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound UL Flammability Classification Rating 94V-0


    Original     		PDF DSS20200L -120mV DSS20201L AEC-Q101 J-STD-020 DS31604

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT591A 40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -40V • • IC = -1A High Continuous Current • • ICM = -2A Peak Pulse Current Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound


    Original     		PDF FMMT591A -500mV FMMT491A J-STD-020 DS33105

    4 phase stepper motor

    Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818
    Text: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for


    Original     		PDF FMMT618 OT223 FMMT619 OT223 10-20mV 4 phase stepper motor 12v transformer fx3311 ir remote control transmitter BCP54, BCX54 zetex product BCX54 LL5818

    marking P51 transistor

    Abstract: ZX5T751F 1A SOT23
    Text: ZX5T751F ADVANCED ISSUE SOT23 PNP SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -80V V(BR)CEO > -60V Ic(cont) = -3.5A Rce(sat) = 40 m typical Vce(sat) < -80 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •


    Original     		PDF ZX5T751F ZX5T751FTA marking P51 transistor ZX5T751F 1A SOT23

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748

    CM12A

    Abstract: br 2222 npn ZX5T651F
    Text: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS


    Original     		PDF ZX5T651F ZX5T651FTA CM12A br 2222 npn ZX5T651F

    transistor n53

    Abstract: ZX5T653F h 033 Marking N53
    Text: ZX5T653F ADVANCED ISSUE SOT23 NPN SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 200V V(BR)CEO > 100V Ic(cont) = 3.5A Rce(sat) = 40 m typical Vce(sat) < 75 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS


    Original     		PDF ZX5T653F ZX5T653FTA transistor n53 ZX5T653F h 033 Marking N53

    marking P53 transistor

    Abstract: ZX5T753F
    Text: ZX5T753F ADVANCED ISSUE SOT23 PNP SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -120V V(BR)CEO > -100V Ic(cont) = -3A Rce(sat) = 77 m typical Vce(sat) < -110 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •


    Original     		PDF ZX5T753F -120V -100V marking P53 transistor ZX5T753F

    FMMT634Q

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 


    Original     		PDF FMMT634Q 900mA 625mW FMMT734Q AEC-Q101 DS37051 FMMT634Q

    TS16949

    Abstract: ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC
    Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTP2041F -500mV ZXTN2040F ZXTP2041FTA ZXTP2041FTC D-81541 TX75248, TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC

    transistor marking 44 sot23

    Abstract: P41 transistor high gain PNP POWER TRANSISTOR SOT23 Zetex ZXTP2041F ZXTP2041FTA ZXTP2041FTC
    Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTP2041F -500mV ZXTP2041FTA ZXTP2041FTC transistor marking 44 sot23 P41 transistor high gain PNP POWER TRANSISTOR SOT23 Zetex ZXTP2041F ZXTP2041FTA ZXTP2041FTC

    PMBT3906

    Abstract: MARKING SMD PNP TRANSISTOR 2a PMBT3904 MARKING CODE SMD IC
    Text: PMBT3906 PNP switching transistor Rev. 06 — 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT23 TO-236AB small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904. 1.2 Features and benefits


    Original     		PDF PMBT3906 O-236AB) PMBT3904. PMBT3906 MARKING SMD PNP TRANSISTOR 2a PMBT3904 MARKING CODE SMD IC

    P41 transistor

    Abstract: high gain PNP POWER TRANSISTOR SOT23 NY TRANSISTOR MAKING transistor marking 44 sot23 making 2a sot23 ZXTP2041F ZXTP2041FTA ZXTP2041FTC
    Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTP2041F -500mV ZXTP2041FTA ZXTP2041FTC P41 transistor high gain PNP POWER TRANSISTOR SOT23 NY TRANSISTOR MAKING transistor marking 44 sot23 making 2a sot23 ZXTP2041F ZXTP2041FTA ZXTP2041FTC

    making 2a sot23

    Abstract: ZXTN2040F ZXTN2040FTA ZXTN2040FTC ZXTP2041F
    Text: ZXTN2040F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > 40V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2040F 500mV ZXTP2041F ZXTN2040FTA ZXTN2040FTC making 2a sot23 ZXTN2040F ZXTN2040FTA ZXTN2040FTC ZXTP2041F

    ZXTP2041

    Abstract: ic 4446 P41 sot23 NPN
    Text: ZXTP2041F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTP2041F -500mV ZXTP2041F ZXTP2041FTA ZXTP2041FTC ZXTP2041 ic 4446 P41 sot23 NPN

    Untitled

    Abstract: No abstract text available
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


    Original     		PDF FMMT591 500mW FMMT491 FMMT591TA D-81541

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FMMT491 O FEATURES * Low equivalent on-resistance; RCE Mt 210m ft at 1A c CO M PLEM ENTARY T YPEP A R T M A R K IN G D ET A IL - FM M T591 491 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    OCR Scan     		PDF FMMT491 100MHz 300ns. 000S2fl3

    YL2 sot23

    Abstract: bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ, 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.


    OCR Scan     		PDF BF547 bas500 YL2 sot23 bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412