TRANSISTOR SMD MARKING CODE 1d
Abstract: SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODES PMBTA42 PMBTA92 marking code DG SMD Transistor transistor marking DG SMD TRANSISTOR MARKING .1D
Text: PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.
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PMBTA42
O-236AB)
PMBTA92.
PMBTA42
TRANSISTOR SMD MARKING CODE 1d
SMD TRANSISTOR MARKING 1D
TRANSISTOR SMD MARKING CODES
PMBTA92
marking code DG SMD Transistor
transistor marking DG
SMD TRANSISTOR MARKING .1D
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Untitled
Abstract: No abstract text available
Text: PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.
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PMBTA42
O-236AB)
PMBTA92.
PMBTA42
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74299
Abstract: 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V THN6201S
Text: THN6201S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6201S is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES
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THN6201S
OT-23
THN6201S
12GHz
800GHz
000GHz
200GHz
400GHz
600GHz
74299
44071 transistor
104462
39158
76620
54175
82258
75604
TRANSISTOR SOT23, Vbe 8V
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits
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BFR540
BFR540
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits
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BFR520
BFR520
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bfr520
Abstract: No abstract text available
Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits
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BFR520
BFR520
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all transistor data sheet
Abstract: free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing
Text: BFR540 NPN 9 GHz wideband transistor Rev. 05 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain
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BFR540
BFR540
all transistor data sheet
free download transistor data sheet
zo 103 ma
CATV amplifier transistor
transistor equivalent table
RF NPN POWER TRANSISTOR 2.5 GHZ
philips satellite systems
common emitter amplifier
all ic data
common collector amplifier circuit designing
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BFR540C
Abstract: No abstract text available
Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits
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BFR540
BFR540
BFR540C
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RF TRANSISTOR 1.5 GHZ
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter
Text: BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain
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BFR520
BFR520
RF TRANSISTOR 1.5 GHZ
RF NPN POWER TRANSISTOR 2.5 GHZ
RF NPN POWER TRANSISTOR 3 GHZ
zo 103 ma
Types of Radar
1.2 ghz tuner
radar circuit component
transistor equivalent table
MRA705
RF TRANSISTOR 2.5 GHZ s parameter
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU520A
BFU520A
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU530A
BFU530A
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU550A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU550A
BFU550A
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise:NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.
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2SC2712
2SA1162.
OT-23
BL/SSSTC021
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5343 transistor
Abstract: transistor 2sc5343 2SC5343 equivalent 2sc5343 2SA1980S TRANSISTOR K 135 J 50 transistor 5343
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC5343 Pb Excellent hFE linearity Lead-free :hFE 2 =100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). z Low noise:NF=1Db(Typ).at f=1KHz. z Complementary pair with 2SA1980S.
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2SC5343
150Ma
2SA1980S.
OT-23
BL/SSSTC022
5343 transistor
transistor 2sc5343
2SC5343 equivalent
2sc5343
2SA1980S
TRANSISTOR K 135 J 50
transistor 5343
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise:NF=1dB Typ ,10dB(Max). z Commplementary to 2SC2712. z Small package. 2SA1162 Pb Lead-free APPLICATIONS z General purpose application. SOT-23 ORDERING INFORMATION
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2SA1162
2SC2712.
OT-23
BL/SSSTC0092
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sot-23 Marking LG
Abstract: 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise:NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.
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2SC2712
2SA1162.
OT-23
BL/SSSTC021
sot-23 Marking LG
2SC2712
SOT 23 LY
LY SOT23
transistor marking LG
MARKING Lg SOT23
2SA1162
marking LG sot-23
marking LY sot-23
transistor marking code lg
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1D SOT23
Abstract: sot23 marking 1d transistor SOT23 1d 1d sot-23 marking
Text: MMBTA42 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MMBTA42
OT-23
OT-23
MMBTA92
30MHz
1D SOT23
sot23 marking 1d
transistor SOT23 1d
1d sot-23 marking
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ALY TRANSISTOR
Abstract: ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR
Text: KTC3875 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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KTC3875
OT-23
OT-23
KTA1504
100mA,
ALY TRANSISTOR
ALG TRANSISTOR
ALY Transistor MARKING
transistor ALY
transistor aly 10
sot-23 MARKING ALG
alg sot-23
ALY 23
aly sot23
ALY 01 TRANSISTOR
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SY SOT23
Abstract: SG SOT23 MARKING MARKING sg SOT23
Text: 2SA1162 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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2SA1162
OT-23
OT-23
2SC2712
-100A
-100mA
-10mA
SY SOT23
SG SOT23 MARKING
MARKING sg SOT23
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2sc5343
Abstract: Transistor 10A 60v
Text: 2SC5343 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SC5343
OT-23
150mA
100mA
2sc5343
Transistor 10A 60v
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A1015 BA
Abstract: A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015
Text: A1015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz
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A1015
OT-23
OT-23
-150mA
C1815
-100u
-10mA
30MHz
A1015 BA
A1015 sot-23
c1815 pnp
A1015 PNP TRANSISTOR
A1015
transistor pnp a1015
marking BA sot-23
a1015 transistor
c1815 SOT-23
transistor A1015
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CBVK741B019
Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*
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MMBTA42
PZTA42
OT-23
OT-223
CBVK741B019
F63TNR
MMBTA42
MPSA42
PN2222N
PZTA42
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Untitled
Abstract: No abstract text available
Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA
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350mA
380MHz
650MHz
600MHz
200mA
300MHz
100mA
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BSN3005L
Abstract: A35 diode
Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005L FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL • No secondary breakdown 1 2 g s gate • Direct interface to C-MOS, TTL etc. 3 d drain DESCRIPTION
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BSN3005L
711002b
0110D4b
711DfiEbi
011DD4?
BSN3005L
A35 diode
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