TRANSISTOR zo 109 ma
Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C
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B15V140
B15V140
OT-223
OT-103
TRANSISTOR zo 109 ma
transistor zo 109
transistor 86
IC 7585
midium power uhf transistor
microwave transistor
ZO 109 transistor
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C 3311 transistor
Abstract: BRF4801 c 3198 transistor 136.21 IC 7585 midium power uhf transistor BRF480 BRF4801J Silicon Bipolar Transistor 35 MICRO-X BRF48023
Text: BIPOLARICS, INC. Part Number BRF480 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' BRF480 is a high performance silicon bipolar transistor intended for medium power linear and Class C applications at VHF, UHF and microwave frequencies in 7.2
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BRF480
BRF480
OT-223
OT-103
BRF48086
BRF48084
BRF48085
BRF48004
C 3311 transistor
BRF4801
c 3198 transistor
136.21
IC 7585
midium power uhf transistor
BRF4801J
Silicon Bipolar Transistor 35 MICRO-X
BRF48023
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D 1398 Transistor
Abstract: BFG32 BFG96 DD311
Text: Phillp^em iconductore _ bbS3131 ÜD3114b 712 Product specification M A P X Ê PNP 5 GHz wideband transistor BFG32 PINNING DESCRIPTION PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in wideband amplifiers, such as MATV
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G03114b
BFG32
OT103
BFG96.
OT103.
D 1398 Transistor
BFG32
BFG96
DD311
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transistor 1264-1
Abstract: PHm 0440 transistor npn d 2058 BFG90A BFG90 phm 0048 phm 0031 ami 981 FP 801 UCD074
Text: Philips S em iconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ' SbE D • / g BFG90A 711Dfi2b □□45111 735 ■ PHIN PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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OT103
BFG90A
711002b
OT103.
transistor 1264-1
PHm 0440
transistor npn d 2058
BFG90A
BFG90
phm 0048
phm 0031
ami 981
FP 801
UCD074
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BFG34
Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726
Text: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband
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BFG34
OT103
ON4497)
OT103.
BFG34
ON4497
TRANSISTOR 185 846
TRANSISTOR 726
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BFG65
Abstract: TAG 9223 TAG 8653 702 P TRANSISTOR 4221 transistor transistor tag 306 558 npn 809 npn BFU65 transistor 3702
Text: Product specification Philips Semiconductors BFG65 NPN 8 GHz wideband transistor SbE D PHILIPS INTERNATIONAL DESCRIPTION 7110ÛSb 0045DÔ2 D04 « P H I N PINNING NPN transistor in a four-lead dual em itter plastic envelope SOT103 . It is designed fo r wideband
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BFG65
OT103)
7110fiSb
0045DÃ
OT103.
BFG65
TAG 9223
TAG 8653
702 P TRANSISTOR
4221 transistor
transistor tag 306
558 npn
809 npn
BFU65
transistor 3702
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2322-712
Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
Text: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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OT103
33-OS
BFG134
Q04S2014
OT103.
2322-712
BFG134
LC 3524
philips resistor 2322 763
2222 372
TAG 453 665 800
2222 379
2322 712
fr 253/30 r
h a 431 transistor
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BFG90A
Abstract: No abstract text available
Text: Philips Semiconductors bbS 3^31 0031222 13 T Product specification « A P X £ NPN 5 GHz wideband transistor BFG90A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. PIN It is designed for application in
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BFG90A
OT103
OT103.
BFG90A
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BFG134
Abstract: BJE 247
Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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3131S
BFG134
OT103
OT103.
BFG134
BJE 247
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BFG96
Abstract: BFG32 MSB037 3H2 philips MBB352
Text: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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BFG32
OT103
BFG96.
D04SD3S
MSB037
OT103.
BFG96
BFG32
3H2 philips
MBB352
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transistor 3702
Abstract: BFG65 tag 8653 transistor SOT103 TAG 9223 transistor 2566 transistor tag 306 D 799 UBB332 SOT103
Text: Product specification Philips Semiconductors NPN 8 GHz wideband transistor P H IL IP S INTERNATIONAL DESCRIPTION ^ ^ E » - «10»Eh 0 0 W 0 .2 BFG65 ODM M P H I N PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband
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BFG65
OT103)
711005b
OT103.
transistor 3702
tag 8653
transistor SOT103
TAG 9223
transistor 2566
transistor tag 306
D 799
UBB332
SOT103
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BFG65 transistor
Abstract: No abstract text available
Text: Philips Semiconductors H 3 T 31 0 G 3 1 1 ^ 3 bbS SOT H A P X _ Product specification NPN 8 GHz wideband transistor ^ BFG65 N AI1ER PHILIPS/DISCRETE DESCRIPTION b'iE J> PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband
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PDF
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BFG65
OT103)
BFG65 transistor
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BFG32
Abstract: No abstract text available
Text: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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BFG32
OT103
BFG96.
BFG32
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BFG134
Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379
Text: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for
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BFG134
BFG134
bt 1690 transistor
transistor bt 1630
resistor 2322 194 philips
bt 1690 philips
2222 372
DD313
752 J 1600 V CAPACITOR
LC 3524
2222 379
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3R31 0D321b2 fl25 • APX Preliminary specification 2 GHz RF power transistor BLT11 — N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation
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bbS3R31
0D321b2
BLT11
OT103
BLT11
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transistor bf 422 NPN
Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103
Text: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency
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BFR521
OT103
MSB037
OT103.
7110A2b
transistor bf 422 NPN
BFR521
MSB037
NPN transistor mhz s-parameter
transistor SOT103
SOT-103
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5609 t transistor
Abstract: 5609 transistor transistor 5609 BFG195 5609 npn transistor 5609 npn 702 P TRANSISTOR 702 Z TRANSISTOR UBB267 Tomb-25
Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ^ SbE T> m 7110fl2b BFG195 0D4SE2fl TIT • PINNING NPN transistor in a 4-lead dual-emitter plastic SOT1Q3 envelope. PIN It is designed for wideband
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BFG195
7110fl2b
OT103.
5609 t transistor
5609 transistor
transistor 5609
BFG195
5609 npn transistor
5609 npn
702 P TRANSISTOR
702 Z TRANSISTOR
UBB267
Tomb-25
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rf transistor mar 8
Abstract: npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips
Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT1Q3 plastic package. • High efficiency • Small size discrete power amplifier
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BLT11
OT103.
711DflEL
rf transistor mar 8
npn C 1740
Micro Choke
2222-032
SOT103
"RF Power Transistor"
Transistor 1740
BD228
BLT11
2322 157 philips
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bc337 TRANSISTOR equivalent
Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103
Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier
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BLT10
OT103
MSB037
OT103.
711002b
bc337 TRANSISTOR equivalent
TRANSISTOR C875, PIN
TRANSISTOR C875
BC337
SOT-103
rf transistor mar 8
C875 transistor
BC337 SPICE
MJE 340 transistor
transistor SOT103
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification bbSB'lBl DOBSlbD TST H A P X 2 GHz RF pow er transistor BLT10 N AMER PHILIPS/DISCRETE b'lE D DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation in handheld radio equipment at
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BLT10
OT103
BLT10
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BLU98
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE T> m bbS3S3i ooeaaaB BLU98 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • emitter-ballasting resistors fo r an optimum temperature profile
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BLU98
OT-103)
OT-103.
bb53T31
BLU98
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TRANSISTOR P3
Abstract: 4 pin dual-emitter bs 88 max zs values FP 801 BFG91A UBB330 0507 transistor 45194 transistor C 2290 transistor 4393
Text: Product specification Philips Semiconductors T NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • 7 - , ^ BFG91A 711DS2b 0DHS1S2 S1G « P H I N PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in
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BFG91A
7110fi2b
OT103.
TRANSISTOR P3
4 pin dual-emitter
bs 88 max zs values
FP 801
BFG91A
UBB330
0507 transistor
45194
transistor C 2290
transistor 4393
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BFG34
Abstract: 8723 transistor ON4497 UBS357 M883S
Text: P hilips Sem iconductors bb53^31 DD311b7 Ml? NPN 4 GHz wideband transistor ^ BFG34 N AflER PH ILIPS/DISCRETE DESCRIPTION b'iE » PINNING NPN transistor in a four-lead dual-emitter plastic S O U 03 envelope. It is designed for wideband application in CATV and MATV
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BFG34
OT103
ON4497)
BFG34
8723 transistor
ON4497
UBS357
M883S
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BFG96
Abstract: No abstract text available
Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in
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bbS3T31
0031ST2
BFG96
BFG32.
OT103.
BFG96
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