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    TRANSISTOR SOT-23 MARKING AR Search Results

    TRANSISTOR SOT-23 MARKING AR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT-23 MARKING AR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel


    Original     		PDF KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF

    1N914 SOT-23

    Abstract: 2L SOT-23 1N914 LMBT5401LT1 LMBT5401LT1G MARKING .01 SOT
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1 ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Package Shipping 1 LMBT5401LT1 SOT-23 3000/Tape&Reel LMBT5401LT1G Pb-Free SOT-23 3000/Tape&Reel 2 SOT– 23


    Original     		PDF LMBT5401LT1 OT-23 3000/Tape LMBT5401LT1G LMBT5401LT1-5/5 1N914 SOT-23 2L SOT-23 1N914 LMBT5401LT1 LMBT5401LT1G MARKING .01 SOT

    BF569

    Abstract: marking A1 TRANSISTOR BF569R marking LM
    Text: BF569/BF569R Silicon PNP Planar RF Transistor Applications For selfoscillating RF mixter stages 1 2 1 3 3 94 9280 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BF569R Marking: LM Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter


    Original     		PDF BF569/BF569R BF569 BF569R D-74025 16-Jan-96 marking A1 TRANSISTOR marking LM

    10u 35v

    Abstract: 2SA1179 sot 23 PNP
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


    Original     		PDF OT-23 2SA1179 -50mA -10mA 10u 35v 2SA1179 sot 23 PNP

    BF569

    Abstract: BF569R
    Text: BF 569 / BF 569 R TELEFUNKEN Semiconductors Silicon PNP Planar RF Transistor Applications For selfoscillating RF mixter stages 1 2 1 3 3 2 94 9280 BF569 Marking Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 95 10527 BF569R Marking Plastic case (SOT 23R)


    Original     		PDF BF569 BF569R D-74025

    CQ 523

    Abstract: MARKING CODE cq sot-89
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping


    Original     		PDF L2SC2411KXLT1G L2SA1036K 236AB) L2SC2411KPLT1G 3000/Tape L2SC2411KPLT3G 10000/Tape L2SC2411KQLT1G L2SC2411KQLT3G CQ 523 MARKING CODE cq sot-89

    SOT23 marking skS

    Abstract: Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs
    Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23


    Original     		PDF BSS138N OT-23 Q67042-S4184 E6327: Q67042-S4190 E6433: SOT23 marking skS Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs

    SOT23 marking skS

    Abstract: SKs SOT23 q67042-s4184 dd1270 BSS138N D023 D26 SOT23 marking code SKs marking SKs sot-23
    Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23


    Original     		PDF BSS138N OT-23 BSS138N OT-23 Q67042-S4184 Q67042-S4190 E6327: E6433: SOT23 marking skS SKs SOT23 dd1270 D023 D26 SOT23 marking code SKs marking SKs sot-23

    sot-23 2L

    Abstract: No abstract text available
    Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23


    Original     		PDF MMBT5401 -150V 350mW OT-23 QW-R206-011 sot-23 2L

    2tk transistor

    Abstract: No abstract text available
    Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4403K MMBT4403K OT-23 2tk transistor

    2FK transistor

    Abstract: No abstract text available
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF MMBT2907AK MMBT2907AK OT-23 2FK transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23

    SOT-23 2xk

    Abstract: 2xk transistor npn
    Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4401K MMBT4401K OT-23 SOT-23 2xk 2xk transistor npn

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA13 MMBTA13 OT-23 QW-R206-006

    transistor 1AK

    Abstract: 1AK marking transistor MMBT3904K 1ak transistor
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23 transistor 1AK 1AK marking transistor 1ak transistor

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA13 MMBTA13 OT-23 100ms QW-R206-006

    L2SC2411KRLT1G

    Abstract: L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411K*LT1 FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 TO–236AB Marking Shipping


    Original     		PDF L2SC2411K L2SA1036K 236AB) L2SC2411KPLT1 3000/Tape L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1G L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1

    MMBT5551A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION


    Original     		PDF MMBT5551 OT-23 MMBT5551L MMBT5551-AE3-R MMBT5551L-AE3-R OT-23 QW-R206-010 MMBT5551A

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA14 MMBTA14 OT-23 QW-R206-038

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS


    Original     		PDF LMBT5401LT1G 3000/Tape LMBT5401LT3G 10000/Tape

    BSS139

    Abstract: E6327 Q62702-S612 BSS139 SOT23 diode sot-23 marking AG MARKING CODE br 13 SOT23
    Text: BSS139 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 250 V R DS on ,max 30 Ω I DSS,min 0.03 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS139 SOT-23 Q62702-S612


    Original     		PDF BSS139 OT-23 Q62702-S612 E6327: BSS139 E6327 Q62702-S612 BSS139 SOT23 diode sot-23 marking AG MARKING CODE br 13 SOT23

    BSS159

    Abstract: SOT-23 marking j25 BSS159N E6327
    Text: BSS159N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 60 V R DS on ,max 8 Ω I DSS,min 0.13 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS159 SOT-23 Q67000-S321


    Original     		PDF BSS159N OT-23 BSS159 Q67000-S321 E6327: BSS159 SOT-23 marking j25 BSS159N E6327

    BSS159N

    Abstract: E6327 SOT-23 marking j25 D007
    Text: BSS159N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 60 V R DS on ,max 8 Ω I DSS,min 0.13 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS159N SOT-23 Q67042-S1488


    Original     		PDF BSS159N OT-23 Q67042-S1488 E6327: BSS159N E6327 SOT-23 marking j25 D007

    marking d007 sot23

    Abstract: No abstract text available
    Text: BSS159N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 60 V R DS on ,max 8 Ω I DSS,min 0.13 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS159N 0) SOT-23 Q62702-S1488


    Original     		PDF BSS159N OT-23 BSS159N OT-23 Q62702-S1488 Q67042-S4293 E6327: E6906: marking d007 sot23