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    TRANSISTOR SMPS Search Results

    TRANSISTOR SMPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK454-60H

    Abstract: BUK474-60H
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,


    Original     		PDF O220AB BUK454-60H BUK454-60H BUK474-60H

    BUK454-60H

    Abstract: BUK474-60H PHP36N06E
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,


    Original     		PDF O220AB PHP36N06E BUK454-60H BUK474-60H PHP36N06E

    BUK455-60H

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,


    Original     		PDF O220AB BUK455-60H BUK455-60H

    BUK455-60H

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,


    Original     		PDF O220AB BUK455-60H BUK455-60H

    BUK456-1000A

    Abstract: BUK456-1000 BUK456-1000B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK456-1000B BUK456-1000A BUK456-1000 BUK456-1000B

    BUK453-60A

    Abstract: BUK453-60B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK453-60A/B BUK453 BUK453-60A BUK453-60B

    BUK455

    Abstract: BUK455-200A BUK455-200B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK455-200A/B BUK455 -200A -200B BUK455 BUK455-200A BUK455-200B

    BUK455-60A

    Abstract: BUK455 BUK455-60B buk455-50 BUK455-50a
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK455-60A/B BUK455 BUK455-60A BUK455 BUK455-60B buk455-50 BUK455-50a

    BUK456-50A

    Abstract: BUK456-60A BUK456-50 BUK456 BUK456-60B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK456-60A/B BUK456 BUK456-50A BUK456-60A BUK456-50 BUK456 BUK456-60B

    BUK452-60A

    Abstract: BUK452-60B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK452-60A/B BUK452 BUK452-60A BUK452-60B

    BUK454-200A

    Abstract: BUK454-200B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK454-200A/B BUK454 -200A -200B BUK454-200A BUK454-200B

    BUK456-100A

    Abstract: BUK456-100 BUK456 BUK456-100b v1270 PowerMos transistors TO220 package
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK456-100A/B BUK456 -100A -100B BUK456-100A BUK456-100 BUK456 BUK456-100b v1270 PowerMos transistors TO220 package

    BUK455-60H

    Abstract: T0220AB
    Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF BUK455-60H T0220AB T0220AB; T0220 BUK455-60H

    BUK454-60H

    Abstract: T0220AB
    Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF BUK454-60H T0220AB T0220AB; T0220 BUK454-60H T0220AB

    BUK416-1OOAE

    Abstract: BUK416-100BE BUK416-100AE transistor 136 138 140
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK416-100AE/BE BUK416 -100AE -100BE OT227B BUK416-1OOAE/BE BUK416-1OOAE BUK416-100BE BUK416-100AE transistor 136 138 140

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel fntancam entpiode field-effectporor transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK436-800A/B BUK436 -800A -800B

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF BUK454-60H T0220AB

    PHP36

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF PHP36N06E T0220AB PHP36

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF PHP36N06E T0220AB 9/16m

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF BUK455-60H T0220AB

    BUK455-60A/B

    Abstract: BUK455-60A
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK455-60A/B BUK455 T0220AB CONFIGURATION1993 BUK455-60A/B BUK455-60A

    transistor k 385

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK456-800A/B BUK456 -800A -800B T0220AB transistor k 385

    BUK455-100A

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK455-100A/B BUK455 -100A -100B T0220AB K455-100A/B BUK455-100A

    k436w

    Abstract: 636 transistor sd 636 transistor
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF K436W-200A/B BUK436 -200A -200B OT429 T0247) BUK436W-200A/B k436w 636 transistor sd 636 transistor