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    TRANSISTOR SMD QP Search Results

    TRANSISTOR SMD QP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD QP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STR 6750

    Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
    Text: Version 1.1 , July 2000 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board


    Original     		PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout

    SMD MOSFET DRIVE 4450 8 PIN

    Abstract: A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc
    Text: Version 1.2 , November 2001 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion        200W SMPS Demonstration Board


    Original     		PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 SMD MOSFET DRIVE 4450 8 PIN A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc

    230v to 12v step down transformer

    Abstract: 230v to 12v ac step down transformer TRANSFORMER ERL35 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit ERL35 W17 SMD transistor smps 230V smd transistor w17 1N4148 SMD LL-34
    Text: PM30006-02 ATX 300W 230V 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7


    Original     		PDF PM30006-02 80PLUS SG6931, SG6516, SG6858 230v to 12v step down transformer 230v to 12v ac step down transformer TRANSFORMER ERL35 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit ERL35 W17 SMD transistor smps 230V smd transistor w17 1N4148 SMD LL-34

    TRANSFORMER ERL35

    Abstract: 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor atx power supply schematic dc 600 watts SOT W17 SMD transistor smd transistor w12 230v to 12v ac step down transformer
    Text: PM30006-01 ATX 300W 115Vac/230Vac 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7


    Original     		PDF PM30006-01 115Vac/230Vac 80PLUS SG6931, SG6516, SG6858 TRANSFORMER ERL35 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor atx power supply schematic dc 600 watts SOT W17 SMD transistor smd transistor w12 230v to 12v ac step down transformer

    TRANSISTOR j412

    Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
    Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.


    Original     		PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD

    transistor K 1352

    Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor
    Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor

    30RF35

    Abstract: VJ1206Y104KXB smd transistor equivalent table
    Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 — 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1.


    Original     		PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table

    smd transistor 3400

    Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor
    Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance


    Original     		PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor 3400 smd transistor equivalent table J412 - TRANSISTOR SMD C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35 722 smd transistor

    BLF6G38S-25

    Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
    Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance


    Original     		PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z

    IS9-2100ARH-8

    Abstract: 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC
    Text: Military/Space 17 2008 P RODUCT S ELECTION GUIDE Military ICs pg. 17-2 Defense IC Test Flows (pg. 17-6) Defense ICs (pg. 17-2) MIL-PRF-38535 Class Q (pg. 17-6) Auxiliary Output (pg. 17-2) Comparators (pg. 17-4) EEPROM (pg. 17-2) Micro + Peripherals (pg. 17-4)


    Original     		PDF MIL-PRF-38535 RS-232) IS9-1845ASRH-8 5962F0150901QXC IS9-1845ASRH-Q 5962F0150901VXC IS9-2100ARH-8 5962F9953602QXC IS9-2100ARH-Q 5962F9953602VXC IS9-2100ARH-8 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC

    5962F9568902VXC

    Abstract: HS0-4080ARH-Q is9 1825asrh-q 5962F0052301VYC CD40106BKMSR 0546r 5962F9954701VXC 5962F0150901VXC HS 3282 CD4063
    Text: Space/Defense 17 2009 P RODUCT S ELECTION GUIDE Defense ICs pg. 17-2 Defense IC Test Flows (pg. 17-6) Defense ICs (pg. 17-2) MIL-PRF-38535 Class Q (pg. 17-6) Auxiliary Output (pg. 17-2) Comparators (pg. 17-4) EEPROM (pg. 17-2) Micro + Peripherals (pg. 17-4)


    Original     		PDF MIL-PRF-38535 RS-232) IS9-1845ASRH-8 5962F0150901QXC IS9-1845ASRH-Q 5962F0150901VXC IS9-2100ARH-8 5962F9953602QXC IS9-2100ARH-Q 5962F9953602VXC 5962F9568902VXC HS0-4080ARH-Q is9 1825asrh-q 5962F0052301VYC CD40106BKMSR 0546r 5962F9954701VXC 5962F0150901VXC HS 3282 CD4063

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    C5750X7R1H106M

    Abstract: 30RF35
    Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1.


    Original     		PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35

    Untitled

    Abstract: No abstract text available
    Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance


    Original     		PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100

    RF35

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35

    TRANSISTOR J601

    Abstract: gp816 RF35 J2396 J249
    Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance


    Original     		PDF BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249

    transistor BV-1 501

    Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB
    Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 — 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.


    Original     		PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 BLF6G38LS-50 transistor BV-1 501 smd 501 transistor C5750X7R1H106M 30RF35 RF35 VJ1206Y104KXB

    Untitled

    Abstract: No abstract text available
    Text: Z-Power LED X10490 Technical Data Sheet Specification SSC-PTR202-IXO SSC Drawn Approval Customer Approval Rev. 00 April 2009 www.acriche .com www.acriche.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet [ Contents ] 1. Features


    Original     		PDF X10490 SSC-PTR202-IXO SSC-QP-7-07-24

    SSC-PTR202-IX0

    Abstract: SSC-PTR202-IXO PTR202-IXO MAX280
    Text: Z-Power LED X10490 Technical Data Sheet Specification SSC-PTR202-IXO SSC Drawn Approval Customer Approval Rev. 00 April 2009 www.acriche .com www.acriche.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet [ Contents ] 1. Features


    Original     		PDF X10490 SSC-PTR202-IXO SSC-QP-7-07-24 SSC-PTR202-IX0 SSC-PTR202-IXO PTR202-IXO MAX280

    10G SMD Transistor

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 2 — 2 December 2010 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 10G SMD Transistor

    SMD transistor package code A64

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 — 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.


    Original     		PDF BLF6G27-10; BLF6G27-10G IS-95 ACPR885k ACPR1980k BLF6G27-10 SMD transistor package code A64

    Untitled

    Abstract: No abstract text available
    Text: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA


    OCR Scan     		PDF b53T31 BLT80

    Untitled

    Abstract: No abstract text available
    Text: mm/ Features 1. î M M t t Q M D i m m M & r J W X 37ï?o tä^cDämmm 2. ^ y y v o y ^ - i ^ ^ y i j y 3. J 7 D - [ i ^ m hs 1. Developed as a chip-type SMD Photo-transistor 2. Automatic mounting by chip mounter available 3. Reflow soldering available o


    OCR Scan     		PDF

    VDE0

    Abstract: LP60 065 TPS10
    Text: SFH620AA/AGB SIEMENS 5.3 kV TRIOS Optocoupier AC Voltage Input Qptoeouptors FEATURES • High Current Transfer Ratios at 5 mA: 50-600% at 1 mA: 45% typical >13 • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • isolation Test Voltage, 5300 VACrms


    OCR Scan     		PDF SFH6206 SFH620AA/AGB SFH620AA/AGB VDE0 LP60 065 TPS10