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    TRANSISTOR SMD 3D Search Results

    TRANSISTOR SMD 3D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD 3D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor 2a

    Abstract: 5a SMD Transistor
    Text: Transistor IC Transistors Transistor DIP SMDType Type SMD Type Product specification 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1


    Original     		PDF 3DD13007 O-263 smd transistor 2a 5a SMD Transistor

    smd transistor 2Q

    Abstract: FMMT5209 30Hz
    Text: Transistors IC SMD Type Small Signal Transistor FMMT5209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF FMMT5209 OT-23 20MHz 200Hz 15KHz 140KHz smd transistor 2Q FMMT5209 30Hz

    FMMT5210

    Abstract: transistor smd marking NA
    Text: Transistors IC SMD Type Small Signal Transistor FMMT5210 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF FMMT5210 OT-23 20MHz 200Hz 15KHz 140KHz FMMT5210 transistor smd marking NA

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Power Transistor 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1 1 +0.2 15.25-0.2 5.60 +0.1 1.27-0.1


    Original     		PDF 3DD13007 O-263

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 NX3020NAK 30 V, single N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX3020NAK O-236AB)

    3F smd transistor

    Abstract: 3D smd marking smd transistor 3F smd transistor 3g smd transistor 3d SMD TRANSISTOR MARKING 3B smd 3f SMD Transistors 3f SMD 3B transistor smd 3E
    Text: Transistors IC SMD Type PNP General Purpose Transistor BC856W,BC857W,BC858W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856W BC857W BC858W Unit Collector-base voltage


    Original     		PDF BC856W BC857W BC858W BC856W BC857W BC856AW BC856BW BC857AW 3F smd transistor 3D smd marking smd transistor 3F smd transistor 3g smd transistor 3d SMD TRANSISTOR MARKING 3B smd 3f SMD Transistors 3f SMD 3B transistor smd 3E

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3020NAKT OT416 SC-75)

    2N0807

    Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
    Text: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N08S2-07 SPI80N08S2-07 P-TO220-3-1 2N0807 Q67060-S6082 Q67040-S4263 2n08 Q67040-S4264

    SDV1005E

    Abstract: V5R5
    Text: Multilayer Chip Varistor – SDV Series Operating Temp. : -55℃~+125℃ FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time <0.5ns Excellent solderability (Ni, Sn plating) ● ● ● APPLICATIONS Transient voltage protection for IC and transistor


    Original     		PDF 1005-1pF 1005-2pF SDV1608 1608-1pF 1608-2pF SDV1005E V5R5

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3020NAKW OT323 SC-70)

    2N0605

    Abstract: SPI80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 2N060
    Text: Preliminary data OptiMOSâ Power-Transistor SPI80N06S2-05 SPP80N06S2-05,SPB80N06S2-05 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version P-TO263-3-2 55


    Original     		PDF SPI80N06S2-05 SPP80N06S2-05 SPB80N06S2-05 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N06S2-05 Q67040-S4245 2N0605 2N0605 SPI80N06S2-05 SPB80N06S2-05 2N060

    Q67042-S4057

    Abstract: ANPS071E SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303 Q67042-S4058
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPP100N03S2-03 Q67042-S4058 Q67042-S4057 PN0303 Q67042-S4116 Q67042-S4057 ANPS071E SPB100N03S2-03 SPI100N03S2-03 PN0303 Q67042-S4058

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		PDF IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31

    Q67060-S6038

    Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
    Text: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID


    Original     		PDF SPP100N04S2L-03 SPB100N04S2L-03 P-TO263-3-2 P-TO220-3-1 SPP100N04S2L-03 Q67060-S6038 PN04L03 SPB100N04S2L-03 Q67060-S6038 Diode 1_b SMD PN04L03

    2n0303

    Abstract: INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03 SPP80N03S2-03
    Text: SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID 80 A • Superior thermal resistance


    Original     		PDF SPI80N03S2-03 SPP80N03S2-03 SPB80N03S2-03 SPP80N03S2-03 Q67040-S4247 Q67040-S4258 2N0303 Q67042-S4079 2n0303 INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03

    IPP25N06S3L-21

    Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
    Text: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V


    Original     		PDF IPI25N06S3L-21 IPP25N06S3L-21 IPB25N06S3L-21 IPP25N06S3L-21 3N06L21 BIPP25N06S3L-21, Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Text: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


    Original     		PDF IPI100N06S3-03 IPP100N06S3-03 IPB100N06S3-03 IPP100N06S3-03 3PN0603 BIPP100N06S3-03, 3PN0603 INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03

    Q67042-S4057

    Abstract: No abstract text available
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS  N-Channel RDS on  Enhancement mode ID  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance max. SMD version P- TO262 -3-1 V m


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPB100N03S2-03 Q67042-S4058 Q67042-S4057 Q67042-S4116 PN0303

    2N04L03

    Abstract: SPB80N04S2L-03 SPP80N04S2L-03
    Text: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1


    Original     		PDF SPP80N04S2L-03 SPB80N04S2L-03 P-TO263-3-2 P-TO220-3-1 Q67040-S4261 Q67040-S4262 2N04L03 SPB80N04S2L-03 SPP80N04S2L-03

    2n0404

    Abstract: ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 SPP80N04S2-04 DSA003760
    Text: SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature P- TO262 -3-1 • Avalanche rated VDS 40 V RDS on max. SMD version 3.4 mΩ ID 80 A P- TO263 -3-2


    Original     		PDF SPI80N04S2-04 SPP80N04S2-04 SPB80N04S2-04 SPP80N04S2-04 Q67040-S4260 2N0404 Q67040-S4257 2n0404 ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 DSA003760

    Untitled

    Abstract: No abstract text available
    Text: SO T6 6 6 NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX3020NAKV OT666

    2n0404

    Abstract: SPB80N04S2-04 SPP80N04S2-04
    Text: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1


    Original     		PDF SPP80N04S2-04 SPB80N04S2-04 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4260 P-TO263-3-2 Q67040-S4257 2n0404 SPB80N04S2-04 SPP80N04S2-04

    3N06L06

    Abstract: C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06
    Text: Target data sheet IPI80N06S3L-06 IPP80N06S3L-06,IPB80N06S3L-06 OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 5.6 mΩ ID 80 A P- TO262 -3-1


    Original     		PDF IPI80N06S3L-06 IPP80N06S3L-06 IPB80N06S3L-06 IPP80N06S3L-06 3N06L06 BIPP80N06S3L-06, 3N06L06 C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06

    3pn06l03

    Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
    Text: Target data sheet IPI100N06S3L-03 IPP100N06S3L-03,IPB100N06S3L-03 OptiMOS-T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 2.7 mΩ ID 100 A P- TO262 -3-1


    Original     		PDF IPI100N06S3L-03 IPP100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 3PN06L03 BIPP100N06S3L-03, 3pn06l03 ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING