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    TRANSISTOR SMD 2X 6 Search Results

    TRANSISTOR SMD 2X 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD 2X 6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD transistor 2x sot 23

    Abstract: CMBT4401 TRANSISTOR SMD 2X K
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    ISO/TS16949 OT-23 CMBT4401 C-120 SMD transistor 2x sot 23 CMBT4401 TRANSISTOR SMD 2X K PDF

    SMD transistor 2x sot 23

    Abstract: TRANSISTOR SMD 2X K CMBT4401
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    OT-23 CMBT4401 C-120 SMD transistor 2x sot 23 TRANSISTOR SMD 2X K CMBT4401 PDF

    SMD transistor 2x sot 23

    Abstract: CMBT4401
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X


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    OT-23 CMBT4401 C-120 SMD transistor 2x sot 23 CMBT4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transisto r Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    OT-23 CMBT4401 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


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    PXTA42 SC-62) PXTA92. AEC-Q101 PDF

    2d SMD PNP TRANSISTOR

    Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor marking code 24 smd TRANSISTOR code marking 2d SMD TRANSISTOR MARKING 2D "marking Code" V2 sot89
    Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 6 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


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    PXTA92 SC-62) PXTA42. AEC-Q101 2d SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODE 2d smd transistor marking code 24 smd TRANSISTOR code marking 2d SMD TRANSISTOR MARKING 2D "marking Code" V2 sot89 PDF

    TRANSISTOR SMD MARKING CODE 1d

    Abstract: SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code
    Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


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    PXTA42 SC-62) PXTA92. AEC-Q101 TRANSISTOR SMD MARKING CODE 1d SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 6 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


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    PXTA92 SC-62) PXTA42. AEC-Q101 PDF

    2d SMD PNP TRANSISTOR

    Abstract: 2d SMD npn TRANSISTOR TRANSISTOR SMD MARKING CODE 2d
    Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


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    PXTA92 SC-62) PXTA42. AEC-Q101 2d SMD PNP TRANSISTOR 2d SMD npn TRANSISTOR TRANSISTOR SMD MARKING CODE 2d PDF

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB760EN DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1 PDF

    TRANSISTOR SMD MARKING CODE QR

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium


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    PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11 PDF

    TRANSISTOR SMD MARKING CODE 1v

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB30XN DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE 1v NXP SMD TRANSISTOR MARKING CODE s1 PDF

    TRANSISTOR SMD MARKING CODE 2x

    Abstract: NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE
    Text: 83B BC846BMB SO T8 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


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    BC846BMB DFN1006B-3 OT883B) AEC-Q101 TRANSISTOR SMD MARKING CODE 2x NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE PDF

    MOSFET TRANSISTOR SMD MARKING CODE 11

    Abstract: P-CHANNEL MOSFET
    Text: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium


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    PMC85XP DFN2020-6 OT1118) MOSFET TRANSISTOR SMD MARKING CODE 11 P-CHANNEL MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: ' 1   PMDPB80XP 20 V, dual P-channel Trench MOSFET Rev. 1 — 30 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB80XP DFN2020-6 OT1118) PDF

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: PMDPB28UN MOSFET TRANSISTOR SMD MARKING CODE NA
    Text: PMDPB28UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB28UN DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE 1P PMDPB28UN MOSFET TRANSISTOR SMD MARKING CODE NA PDF

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: PMDPB38UNE 20 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB38UNE DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1 PDF

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: 020 -6 PMDPB56XN DF N2 30 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB56XN DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1 PDF

    DFN2020-6

    Abstract: No abstract text available
    Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB55XP DFN2020-6 OT1118) DFN2020-6 PDF

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB55XP DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1 PDF

    smd diode marking 2U

    Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
    Text: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB95XNE DFN2020-6 OT1118) smd diode marking 2U smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd PDF

    PMDPB70EN

    Abstract: No abstract text available
    Text: PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB70EN DFN2020-6 OT1118) PMDPB70EN PDF

    marking code 1L

    Abstract: NXP MARKING 1l
    Text: 020 -6 PMDPB42UN DF N2 20 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB42UN DFN2020-6 OT1118) marking code 1L NXP MARKING 1l PDF

    SmD TRANSISTOR a75

    Abstract: No abstract text available
    Text: PBSS5580PA 80 V, 4 A PNP low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


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    PBSS5580PA OT1061 PBSS4580PA. SmD TRANSISTOR a75 PDF