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    PMDPB760EN Price and Stock

    NXP Semiconductors PMDPB760EN,115

    PMDPB760EN - Small Signal Field-Effect Transistor '
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    Rochester Electronics PMDPB760EN,115 9,000 1
    • 1 $0.1593
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    • 100 $0.1497
    • 1000 $0.1354
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    PMDPB760EN Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PMDPB760EN NXP Semiconductors 100 V, dual N-channel Trench MOSFET Original PDF
    PMDPB760ENX NXP Semiconductors PMDPB760EN - PMDPB760EN - 100 V, dual N-channel Trench MOSFET Original PDF

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    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB760EN DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143