STA451C
Abstract: sma4031 STA405A SMA6012 STA437A SLA4031 sta475a STA401A STA341M SLA6010
Text: TRANSISTOR ARRAYS TRANSISTOR ARRAYS VCEO IC ICP hFE Type No. (V) STA301A STA302A STA303A STA304A STA305A STA308A STA311A STA312A STA321A STA322A STA341M STA342M STA401A STA402A STA403A STA404A STA405A STA406A STA407A STA408A STA411A STA412A STA413A STA421A
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STA301A
STA302A
STA303A
STA304A
STA305A
STA308A
STA311A
STA312A
STA321A
STA322A
STA451C
sma4031
STA405A
SMA6012
STA437A
SLA4031
sta475a
STA401A
STA341M
SLA6010
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Super-247 Package
Abstract: IRG4PSC71UD
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
Super-247 Package
IRG4PSC71UD
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irg4bc40
Abstract: IRG4BC40W
Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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1654A
IRG4BC40W
an52-7105
irg4bc40
IRG4BC40W
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Untitled
Abstract: No abstract text available
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
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Untitled
Abstract: No abstract text available
Text: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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1629A
IRG4BC30W
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IRG4IBC30W
Abstract: No abstract text available
Text: PD - 91791 PRELIMINARY IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve
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IRG4IBC30W
O-220
IRG4IBC30W
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diode lt 247
Abstract: IRG4PSC71UD TB diode 1084 GE
Text: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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IRG4PSC71UD
Super-247
O-247
diode lt 247
IRG4PSC71UD
TB diode
1084 GE
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IRG4BC30W
Abstract: No abstract text available
Text: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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1629A
IRG4BC30W
IRG4BC30W
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T2
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bd132
Abstract: transistor ALG 20
Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter
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BD132
OT-32
BD131.
bbS3T31
0D34251
BD131
BD132
bb53T31
transistor ALG 20
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at30b
Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
Text: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz
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AT-30511
AT-30633
AT-30533
OT-23
OT-143
OT-23,
at30b
AT-80B11
AT-30611
sj 2252 ic
AT-30S33
transistor SJ 2518
AT-80533
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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SAA 1251
Abstract: SAA 1025 SAA 1059 SAA 0358
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • 0.8 i 0.1
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2SC5006
SAA 1251
SAA 1025
SAA 1059
SAA 0358
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MP6301 TO SHIBA POWER TRANSISTOR MODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 MP6301 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. •
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MP6301
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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CSB507
Abstract: CSD313
Text: CSB507, CSD313 CSB507 CSD313 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications MIN DIM MAX A 14.42 16.51 9.63 B 10.67 C 3.56 4.83 D 0.90 E 1,15 1,40 F 3.75 3,86 G 2,29 2.79 H 2,54 3.43 J 0,56 K 12.70 14.73
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CSB507,
CSD313
CSB507
CSD313
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BUX37
Abstract: transistor da 307 dg173 TO-204AA transistor
Text: G E SOLI» STATE DI 3875081 G E “SOLID STATE _ File N um b er ' ’ D eT| 3û750fll 00173DS 4 '01E 17305 D T * 3 ^"2.^ Darlington Power Transistor# 1243 BUX37 15-Ampere N-P-N Monolithic Darlington Power Transistor « TERMINAL DESIGNATIONS 400 V , 35 W
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DG173DS
BUX37
15-Ampere
O-204AA
RCA-BUX37
O-204AA
50fll
DD17307
BUX37
transistor da 307
dg173
TO-204AA transistor
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philips carbon film resistor
Abstract: blw98 transistor carbon resistor BLW98
Text: N AMER PHILIPS/DISCRETE bTE D □ DS'iSBS ‘ibD BLW98 b b S B 'm IAPX A U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.
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BLW98
bb53131
philips carbon film resistor
blw98 transistor
carbon resistor
BLW98
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4PC30S
O-247AC
O-247AC
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IRG4PC40S
Abstract: No abstract text available
Text: International I R Rectifier PD - 9.1465A IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4PC40S
O-247AC
O-247AC
IRG4PC40S
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Untitled
Abstract: No abstract text available
Text: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve
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IRG4BC30W
0D2flb53
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