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    TRANSISTOR S55 Search Results

    TRANSISTOR S55 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FJY3005R

    Abstract: FJY4005R transistor s55
    Text: FJY4005R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=4.7KΩ, R2=10KΩ • Complement to FJY3005R Eqivalent Circuit C C S55 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY4005R FJY3005R FJY3005R FJY4005R transistor s55

    FJY3005R

    Abstract: FJY4005R transistor s55
    Text: FJY4005R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=4.7KΩ, R2=10KΩ • Complement to FJY3005R Equivalent Circuit C C S55 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY4005R FJY3005R FJY3005R FJY4005R transistor s55

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    Untitled

    Abstract: No abstract text available
    Text: Y S55y BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    OCR Scan     		PDF BFQ67/BFQ67R/BFQ67W BFQ67 BFQ67R BFQ67W 20-Jan-99

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    KS621K30

    Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
    Text: POWBÌEX KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


    OCR Scan     		PDF KS621K30 Amperes/1000 KS621K30 transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V

    E67349

    Abstract: TLP631 TLP632
    Text: TOSHIBA TLP631JLP632 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP631, TLP632 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP631 and TLP632 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a


    OCR Scan     		PDF TLP631 TLP632 TLP631, TLP632 5000Vrms UL1577, E67349 E67349

    ks621k30

    Abstract: No abstract text available
    Text: KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1600 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts O U T L I N E D R A W IN G Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621K30 Amperes/1000 KSS21K30 ks621k30

    CM25-28

    Abstract: UMI125 UMIL25 UM1L25 UM1L2 DDD1117 UMIL60 Scans-00115691
    Text: 0 1 8 2 9 9 8 ACRI AN INC DE DDDlli? S T —2 3 - S 3 S55HI2IKS80 CRIAN GENERAL DESCRIPTION UMIL25 The UMIL25 is an internally matched UHF transistor designed for the 200-500 MHz frequency range. It may be operated in Class A, AB or C and features gold thin film


    OCR Scan     		PDF DTj01fl2â DDD1117 UMIL25 CM25-28. -65to 01fl2c T-33-13 UM1L25 CM25-28 UMI125 UM1L25 UM1L2 UMIL60 Scans-00115691

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    C160120

    Abstract: transistor 2SK2750 2SK2750
    Text: TOSHIBA 2SK2750 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 r •


    OCR Scan     		PDF 2SK2750 C160120 transistor 2SK2750 2SK2750

    rde 090

    Abstract: BFJ309LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit


    OCR Scan     		PDF MMBFJ309LT1 MMBFJ310LT1 rde 090 BFJ309LT1

    2-10P1B

    Abstract: 2SK2661 L122M l67c
    Text: T O S H IB A 2SK2661 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2661 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 03 .610.2


    OCR Scan     		PDF 2SK2661 -l-35il 2-10P1B 2SK2661 L122M l67c

    2N7221 JANTX

    Abstract: IQR 2400 2N7221 IRFM340 JANTXV2N7221
    Text: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER \ I & R \ REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM34Q 2 INI7221 JANTX2N7221 JANTXV2N7221 [REF: MIL-S-195QO/596 400 Volt, 0.55 Ohm HEXFET Product Summary The HEXFET® technology is the key to International


    OCR Scan     		PDF IRFM340 JANTXV2N7221 MIL-S-19SOO/59S] irfm340d irfm340u O-254 MIL-S-19500 I-332 2N7221 JANTX IQR 2400 2N7221 IRFM340 JANTXV2N7221

    2SC3329

    Abstract: m 3329 2SA1316
    Text: TO SH IBA 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3329 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS . 5.1 MAX. • Very Low Noise in the Region of Low Signal Source Impedance


    OCR Scan     		PDF 2SC3329 2SA1316 2SC3329 m 3329 2SA1316

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Sym b ol Value Unit C ollector-E m itter Voltage v CE O 40 Vdc C o llector-B ase Voltage VC BO 40 Vdc E m itter-B ase Voltage


    OCR Scan     		PDF MMBT6427LT1 -236A b3b7255

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		PDF /2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK

    2SC3605

    Abstract: No abstract text available
    Text: T O S H IB A 2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS . 5.1 M AX. FEATURES : • Low Noise Figure, High Gain • NF = l.ldB, |S 2lel 2 = lOdB f = 1GHz 0.45 0.55 M AX.


    OCR Scan     		PDF 2SC3605 SC-43 2SC3605

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 ì 0.3 Low Saturation Voltage : V c e sat = —1-5V (Max.) (IC = - 2 A , IB = —0.2A) High Power Dissipation : P q = 25W (Tc = 25°C)


    OCR Scan     		PDF 2SB1375 2SD2012

    TC-8008

    Abstract: 2SJ355 xz43
    Text: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)


    OCR Scan     		PDF 2SJ355 2sj355tip51-p^ iei-620) TC-8008 2SJ355 xz43

    EB-230

    Abstract: PA603T mpa603t 048164 IC830
    Text: MOS MWRlto MOS Field Effect Transistor «PA603T U MOS F E T 6 fc> 2 0 S&) P ¿¿PA603T (ä, M OS F E T £ 2 H Jj& f ijl Ltz l ~ £ f 7f £ H I (^ -fï ‘ mm) & 4# o SC-59 ¿[p] L'+f'f Xcos'?"/ Y — 'si MOS F E T £ 2 H i& f lji 0.95 o ¿/PA602T t 3 > 7 ° ij / 's 9 ') T"i£ffl^Tit£


    OCR Scan     		PDF uPA603T PA603T SC-59 /PA602T EB-230 PA603T mpa603t 048164 IC830

    s0t23

    Abstract: LNA SOT23-6 AX2232 MAX2611 SOT23-6 AM oscillator 6pin 63 sot23 6pin AB SOT23-10
    Text: Build Your Radio with Maxim’s Wide • Add Flexibility to Your New or Existing Design • Save Board Space over Discrete Designs but Maintain Design Flexibility • Achieve Faster Time-to-Market wideband DOW N' G A IN ' <S55&cc DUAL IF V C O BUFFER Low-Noise Amplifiers


    OCR Scan     		PDF MAX2640 MAX2641 AX2651+ X2652Ì 900MHz) 1900MHz) MAX2620 MAX2450 MAX2451 MAX2452 s0t23 LNA SOT23-6 AX2232 MAX2611 SOT23-6 AM oscillator 6pin 63 sot23 6pin AB SOT23-10