TRANSISTOR S33 Search Results

TRANSISTOR S33 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR S33 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NEC MARKING surface Abstract: C11531E FP1F3P nec S33 Text: DATA SHEET COMPOUND TRANSISTOR FP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive	Original	C11531E) NEC MARKING surface C11531E FP1F3P nec S33	PDF
transistor DK ql Abstract: marking IAY S3300 AN569 MMSF3300 MMSF3300R2 MARKING S04 wwS marking Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMSF3300/D DATA Advance Information — MMSF33W WaveFETTM Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor I WaveFETM devices are an advanced series of power MOSFETS which utilize Motorola’s	Original	MMSF3300/D MMSF33W 1-30W75-2140 OW41-2447 02-24R609 transistor DK ql marking IAY S3300 AN569 MMSF3300 MMSF3300R2 MARKING S04 wwS marking	PDF
PCR 406 J transistor Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553 Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim	Original	MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553	PDF
IR s27 Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor Text: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics  Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages.  Adjustable programming - suitable for different remote code formats.	Original	HT48RA0-5 HT622x) HT48RA0-5 20SSOP) IR s27 infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor	PDF
AN569 Abstract: MMSF3350 MMSF3350R2 SMD310 Text: MMSF3350 WaveFET HDTMOS Single N-Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area.	Original	MMSF3350 r14525 MMSF3350/D AN569 MMSF3350 MMSF3350R2 SMD310	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
Untitled Abstract: No abstract text available Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d \| MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,	OCR Scan	b3b72S4 MJ10014 MJ10014	PDF
s3331 Abstract: No abstract text available Text: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated	OCR Scan	bbSBT31 BU1508DX bb53T31 S3331 DD2fl33fl	PDF
s34 diode Abstract: KS221K15 switch AU 101 transistor s34 S-34 transistor S33 s34 recovery diode ks22 powerex ks22 Text: ?<WEREX KS221K15 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ilic ic D â r H t lQ tO n Transistor Module 150 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power	OCR Scan	KS221K15 Amperes/1000 s34 diode KS221K15 switch AU 101 transistor s34 S-34 transistor S33 s34 recovery diode ks22 powerex ks22	PDF
s3331 Abstract: No abstract text available Text: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily	OCR Scan	0031SSD BFQ33C OT173 s3331	PDF
s3331 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors	OCR Scan	LXEE18300X S3331 LXE18300X 350fll	PDF
BUZ73 Abstract: K 3911 transistor "" transistor T0220AB Text: N AMER PHILIPS/DISCRETE OL.E D • L,Li53cì31 0 0 1 4 4 5 0 FowerMUS transistor " 7 ■ BUZ73 T~ 37- j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ73 T0220AB; D0144b3 BUZ73 T-39-11 K 3911 transistor "" transistor T0220AB	PDF
ms 7254 ver 1.1 Abstract: ms 7254 ver 3.0 T557 Text: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS	OCR Scan	L3b75S4 MJE13070 MJE13070 ms 7254 ver 1.1 ms 7254 ver 3.0 T557	PDF
ARDV sot 23 Abstract: DS332P Text: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high	OCR Scan	NDS332P ARDV sot 23 DS332P	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA 2SK2267 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2267 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 20.5MAX. É-	OCR Scan	2SK2267 20kfl) 398//H	PDF
FZT2222A Abstract: FZT2222 Text: FZT2222 FZT2222A SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR FEATURES * H fe SPECIFIED UP TO 500mA. * VERY LOW SATURATION VOLTAGE. * COMPLEMENTARY TYPE FZT2222 FZT2222A PARTMARKING DETAILS FZT2222 FZT2222A = = = = FZT2907 FZT2907A FZT2222 FZT2222A ABSOLUTE M A X IM U M RATINGS	OCR Scan	OT223 500mA. FZT2222 FZT2222A FZT2222 FZT2222A	PDF
TRANSISTOR l7824cv Abstract: l7824 Text: SGS-THOMSON mmm L7800 SERIES POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT UP TO 1.5A ■ OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9; 12; 15; 18; 20; 24V ■ THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION > OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION	OCR Scan	L7800 L7800 O-220, ISOWATT220 TRANSISTOR l7824cv l7824	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance	OCR Scan	2SK3017 1-05H	PDF
lm340 Abstract: LM340-12 TO-3 LM340-5 TO-3 transistor LM340 LM340-24 LM340-8 LM3408 n38v LM340 voltage regulator LM340-1B Text: FEATURES ABSOLUTE MAXIMUM RATINGS . OUTPUT CURRENT IN EXCESS OF 1A • INTERNAL THERMAL OVERLOAD PRO TECTION • NO EXTERNAL COMPONENTS RE QUIRED • OUTPUT TRANSISTOR SAFE AREA PROTECTION • INTERNAL SHORT CIRCUIT CURRENT LIMIT . AVAILABLE IN PLASTIC TO-220 AND	OCR Scan	O-220 To-220 O-220 LM340 LM340-12 TO-3 LM340-5 TO-3 transistor LM340 LM340-24 LM340-8 LM3408 n38v LM340 voltage regulator LM340-1B	PDF
NDS335 Abstract: NDS335N supersot-3 Text: July 1 9 9 6 N NDS335N N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features These N -Channel logic level enhancem ent m ode pow er field effect transistors are produced using Nationals proprietary, high cell density, DMOS	OCR Scan	NDS335N OT-23 NDS335 NDS335N supersot-3	PDF
s3331 Abstract: No abstract text available Text: Philips Components BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATURES PIN • Direct interface to C-M O S, TTL, etc. • High speed switching	OCR Scan	BS107 yP1031 s3331	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A 2SK2995 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2995 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance	OCR Scan	2SK2995	PDF
NDS336P Abstract: p-Channel Logic Level Enhancement Mode Text: June 1997 FAIRCHILD ìm ic d n d u c to r - NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral Description SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's	OCR Scan	NDS336P NDS336P p-Channel Logic Level Enhancement Mode	PDF
SOT-23 NDS332P Abstract: NDS332P BOC sot23 Text: June 1997 FAIRCHILD ìm ic d n d u c t o r - NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high	OCR Scan	NDS332P NDS332PRSV. SOT-23 NDS332P NDS332P BOC sot23	PDF

TRANSISTOR S33 Search Results

TRANSISTOR S33 Result Highlights (5)

TRANSISTOR S33 Datasheets Context Search

NEC MARKING surface

transistor DK ql

PCR 406 J transistor

IR s27

AN569

la 4440 amplifier circuit diagram 300 watt

Untitled

s3331

s34 diode

s3331

s3331

BUZ73

ms 7254 ver 1.1

ARDV sot 23

Untitled

FZT2222A

TRANSISTOR l7824cv

Untitled

lm340

NDS335

s3331

Untitled

NDS336P

SOT-23 NDS332P