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    TRANSISTOR S33 Search Results

    TRANSISTOR S33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC MARKING surface

    Abstract: C11531E FP1F3P nec S33
    Text: DATA SHEET COMPOUND TRANSISTOR FP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive


    Original     		PDF C11531E) NEC MARKING surface C11531E FP1F3P nec S33

    transistor DK ql

    Abstract: marking IAY S3300 AN569 MMSF3300 MMSF3300R2 MARKING S04 wwS marking
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMSF3300/D DATA Advance Information — MMSF33W WaveFETTM Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor I WaveFETM devices are an advanced series of power MOSFETS which utilize Motorola’s


    Original     		PDF MMSF3300/D MMSF33W 1-30W75-2140 OW41-2447 02-24R609 transistor DK ql marking IAY S3300 AN569 MMSF3300 MMSF3300R2 MARKING S04 wwS marking

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


    Original     		PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553

    AN569

    Abstract: MMSF3350 MMSF3350R2 SMD310
    Text: MMSF3350 WaveFET HDTMOS Single N-Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area.


    Original     		PDF MMSF3350 r14525 MMSF3350/D AN569 MMSF3350 MMSF3350R2 SMD310

    Untitled

    Abstract: No abstract text available
    Text: MMSF3350 WaveFET HDTMOS™ Single N−Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area.


    Original     		PDF MMSF3350 MMSF3350/D

    S3300

    Abstract: No abstract text available
    Text: MMSF3300 Advance Information WaveFET Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor http://onsemi.com SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 mW WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the


    Original     		PDF MMSF3300 r14525 MMSF3300/D S3300

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,


    OCR Scan     		PDF b3b72S4 MJ10014 MJ10014

    s3331

    Abstract: No abstract text available
    Text: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated


    OCR Scan     		PDF bbSBT31 BU1508DX bb53T31 S3331 DD2fl33fl

    s34 diode

    Abstract: KS221K15 switch AU 101 transistor s34 S-34 transistor S33 s34 recovery diode ks22 powerex ks22
    Text: ?<WEREX KS221K15 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ilic ic D â r H t lQ tO n Transistor Module 150 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS221K15 Amperes/1000 s34 diode KS221K15 switch AU 101 transistor s34 S-34 transistor S33 s34 recovery diode ks22 powerex ks22

    s3331

    Abstract: No abstract text available
    Text: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily


    OCR Scan     		PDF 0031SSD BFQ33C OT173 s3331

    s3331

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors


    OCR Scan     		PDF LXEE18300X S3331 LXE18300X 350fll

    BUZ73

    Abstract: K 3911 transistor "" transistor T0220AB
    Text: N AMER PHILIPS/DISCRETE OL.E D • L,Li53cì31 0 0 1 4 4 5 0 FowerMUS transistor " 7 ■ BUZ73 T~ 37- j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ73 T0220AB; D0144b3 BUZ73 T-39-11 K 3911 transistor "" transistor T0220AB

    ms 7254 ver 1.1

    Abstract: ms 7254 ver 3.0 T557
    Text: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS


    OCR Scan     		PDF L3b75S4 MJE13070 MJE13070 ms 7254 ver 1.1 ms 7254 ver 3.0 T557

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    FZT2222A

    Abstract: FZT2222
    Text: FZT2222 FZT2222A SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR FEATURES * H fe SPECIFIED UP TO 500mA. * VERY LOW SATURATION VOLTAGE. * COMPLEMENTARY TYPE FZT2222 FZT2222A PARTMARKING DETAILS FZT2222 FZT2222A = = = = FZT2907 FZT2907A FZT2222 FZT2222A ABSOLUTE M A X IM U M RATINGS


    OCR Scan     		PDF OT223 500mA. FZT2222 FZT2222A FZT2222 FZT2222A

    TRANSISTOR l7824cv

    Abstract: l7824
    Text: SGS-THOMSON mmm L7800 SERIES POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT UP TO 1.5A ■ OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9; 12; 15; 18; 20; 24V ■ THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION > OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION


    OCR Scan     		PDF L7800 L7800 O-220, ISOWATT220 TRANSISTOR l7824cv l7824

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK3017 1-05H

    lm340

    Abstract: LM340-12 TO-3 LM340-5 TO-3 transistor LM340 LM340-24 LM340-8 LM3408 n38v LM340 voltage regulator LM340-1B
    Text: FEATURES ABSOLUTE MAXIMUM RATINGS . OUTPUT CURRENT IN EXCESS OF 1A • INTERNAL THERMAL OVERLOAD PRO­ TECTION • NO EXTERNAL COMPONENTS RE­ QUIRED • OUTPUT TRANSISTOR SAFE AREA PROTECTION • INTERNAL SHORT CIRCUIT CURRENT LIMIT . AVAILABLE IN PLASTIC TO-220 AND


    OCR Scan     		PDF O-220 To-220 O-220 LM340 LM340-12 TO-3 LM340-5 TO-3 transistor LM340 LM340-24 LM340-8 LM3408 n38v LM340 voltage regulator LM340-1B

    NDS335

    Abstract: NDS335N supersot-3
    Text: July 1 9 9 6 N NDS335N N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features These N -Channel logic level enhancem ent m ode pow er field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS335N OT-23 NDS335 NDS335N supersot-3

    s3331

    Abstract: No abstract text available
    Text: Philips Components BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATURES PIN • Direct interface to C-M O S, TTL, etc. • High speed switching


    OCR Scan     		PDF BS107 yP1031 s3331

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2995 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2995 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2995

    NDS336P

    Abstract: p-Channel Logic Level Enhancement Mode
    Text: June 1997 FAIRCHILD ìm ic d n d u c to r - NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral Description SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF NDS336P NDS336P p-Channel Logic Level Enhancement Mode

    SOT-23 NDS332P

    Abstract: NDS332P BOC sot23
    Text: June 1997 FAIRCHILD ìm ic d n d u c t o r - NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF NDS332P NDS332PRSV. SOT-23 NDS332P NDS332P BOC sot23