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    TRANSISTOR S2E Search Results

    TRANSISTOR S2E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S2E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE S2E

    Abstract: s2e transistor S2E MARKING TPC6005 s2e diode
    Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) · High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF TPC6005 DIODE S2E s2e transistor S2E MARKING TPC6005 s2e diode

    TPC6005

    Abstract: No abstract text available
    Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF TPC6005 TPC6005

    TPC6005

    Abstract: No abstract text available
    Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF TPC6005 TPC6005

    s2e transistor

    Abstract: DIODE S2E
    Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF TPC6005 s2e transistor DIODE S2E

    TPC6005

    Abstract: No abstract text available
    Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF TPC6005 TPC6005

    TPC6005

    Abstract: No abstract text available
    Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF TPC6005 TPC6005

    TRANSISTOR FF75

    Abstract: 1BW TRANSISTOR
    Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module


    OCR Scan     		PDF 34D32CI7 TRANSISTOR FF75 1BW TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 -3 7 - 3 / FF 150 R 06 KL EUPEC S2E Transistor T> 34D32T7 Thermische Eigenschaften Transistor Rthjc Elektrische Eigenschaften 0GG0224 Bectrical properties RthCK Ö2S « U P E C Thermal properties 0,09 0,18 0,03 0,06 DC, pro Baustein / per module DC, pro Zweig / per arm


    OCR Scan     		PDF 34D32T7 0GG0224 34D32CI7

    transistor 1BW 57

    Abstract: IGBT EUPEC
    Text: FF 200 R 06 KF EUPEC S2E ]> G G 00232 TTl •UPEC Thermische Eigenschaften Thermal properties 0,08 °C/W Rthjc DC, pro Baustein / per module 0,16 °C/W DC, pro Zweig / per arm 0,03 °C/W RthCK pro Baustein/per module 0,06 °C/W Transistor Transistor Elektrische Eigenschaften


    OCR Scan     		PDF GGG0232 transistor 1BW 57 IGBT EUPEC

    J975

    Abstract: 1BW TRANSISTOR 733transistor
    Text: EUPEC S2E • 34032^7 000020b flOT » U P E C FF 75 R 10 K 7 =3 « / Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 75 A lc Thermische Eigenschaften Thermal properties DC, pro Baustein / per module


    OCR Scan     		PDF 000020b sat00 J975 1BW TRANSISTOR 733transistor

    TRANSISTOR KT 838

    Abstract: FF200 UTG 16 diode sg 5 ts
    Text: FF 200 R 06 KF EUPEC S2E ]> Rthjc Elektrische Eigenschaften Electrical properties V ces Maximum rated values 600 V 200 A RthCK lc G G 00232 Thermische Eigenschaften Transistor Transistor 3 4 0 3 2 *1 7 T T l •UPEC Thermal properties 0,08 0,16 0,03 0,06 DC, pro Baustein / per module


    OCR Scan     		PDF GGG0232 34D32CI7 TRANSISTOR KT 838 FF200 UTG 16 diode sg 5 ts

    Untitled

    Abstract: No abstract text available
    Text: N T E ELECTRONICS INC S2E D bMaiSS^ PPPSäö^ C13Ö H N T E □ITS - TTL 1M I E G J TRANSISTOR TRANSISTOR LOGIC T -W 3 -Ô | Low Rower, Dual, 4-BK Latch 24-Lead DIP, See Dlag 252 Low Power, 4—Bit Binary Counter 16-Lead DIP, See Dlag 249 Retriggerable Monostable Multivibrator


    OCR Scan     		PDF 24-Lead 16-Lead 14-Lead T-90-01

    FF15R10K

    Abstract: No abstract text available
    Text: 7 *39-3/ F F 15R 10K SSE EUPEC D Ü D D lf iE Thermische Eigenschaften Transistor Transistor 34032^7 i RthJC Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1000 V 15 A RthCK lc 54b «U PEC Thermal properties DC, pro Baustein/per module


    OCR Scan     		PDF FF15R10K 34D32CI7 FF15R10K

    1BW TRANSISTOR

    Abstract: No abstract text available
    Text: FF 50 R 10 K 3MÜ32ci7 üDDOllb 03D « U P E C 52E D EUPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module RthJC DC, pro Zweig / per arm pro Baustein /p e r module RthCK pro Zweig/per arm Transistor Transistor Elektrische Eigenschaften


    OCR Scan     		PDF 3MD32CÃ 34D32CI7 1BW TRANSISTOR

    1BW TRANSISTOR

    Abstract: No abstract text available
    Text: FF 25 R 06 KF SEE T> EUPEC Thermische Eigenschaften Transistor Transistor 34D32T7 OOQGlflb n i H U P E C Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 25 A RfhCK lc Thermal properties DC, pro Baustein/per module DC, pro Zweig /p e r arm


    OCR Scan     		PDF 34D32T7 34D32CI7 1BW TRANSISTOR

    D 1413 transistor

    Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
    Text: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249


    OCR Scan     		PDF 16-Lead 14-LeadDIP 16-LeadDIP 256-Bit 64-Blt NTE74190 NTE74LS190 D 1413 transistor NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74LS190 5.1 diagram NTE74

    LN800

    Abstract: C2E1 F400 diode f400
    Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties


    OCR Scan     		PDF D0DD25fl 34D32CI7 LN800 C2E1 F400 diode f400

    2SC4452

    Abstract: QVC5 Q60H
    Text: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product


    OCR Scan     		PDF G007101 2SC4452 -T-35-07 2SC4452-applied QVC5 Q60H

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP E2E a0ükñ23 □ 7TT707la D T-3H1 2SC3771 # N PN Epitaxial Planar Silicon Transistor 2018A U/V OSC, M IX, High-Frequency General-Purpose Amp Applications 1944B Applications . UHF/VHF frequency converters, looal oscillators, HF amplifiers


    OCR Scan     		PDF 7TT707la 2SC3771 1944B

    sj 2038

    Abstract: ic sj 2038 scr gate drivers ic ec sanyo 2SD1628 p10j T35 ET sanyo sdk marking sdk
    Text: SANYO SEMI CONDUCTOR 2SD1628 CORP ESE D 7 ^ 7 0 7 ^ 00G7S4L, T - 3 5 4 -15 % 2038 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications •X1731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor


    OCR Scan     		PDF ci707b 000724b 2SD1628 250mm2 sj 2038 ic sj 2038 scr gate drivers ic ec sanyo p10j T35 ET sanyo sdk marking sdk

    Untitled

    Abstract: No abstract text available
    Text: . SANYO SEMICONDUCTOR CORP EEE D • 7^ 1707^ 2SD1628 0007241= 4 T - 3 5 -15 % 2038 N P N Epitaxial Planar Silicon Transistor High-Current Switching Applications 731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor


    OCR Scan     		PDF 2SD1628

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR 25E CORP ? clei707b OOObfibS D 2SC4401 S T - 3 h l7 # NPN Epitaxial Planar Silicon Transistor 2059 2754 V/U M IX, OSC, Low-Voltage Amp Applications A pplications • VHF/UHF MIX/OSC, Iow-voltage high-frequency amplifiers Features • Low-voltage operation


    OCR Scan     		PDF i707b 2SC4401 2SC4401-applied

    transistor 2038

    Abstract: 2SA1729 S60S6
    Text: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage


    OCR Scan     		PDF 2SA1729 -T-37-/Ã 250mm2 transistor 2038 2SA1729 S60S6