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    TRANSISTOR S 623 Search Results

    TRANSISTOR S 623 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S 623 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    2SK659

    Abstract: TC-6071
    Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #


    OCR Scan     		PDF 2SK659 2SK659Ã 2SK659 TC-6071

    BD 130 NPN transistor

    Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
    Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


    OCR Scan     		PDF 00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330

    Bd 130 NPN transistor

    Abstract: 62702-D394 transistor z5
    Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


    OCR Scan     		PDF 623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684

    pepi c

    Abstract: MRF426
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.


    OCR Scan     		PDF MRF426 pepi c MRF426

    AF 239 S

    Abstract: AF 239 af239 Germanium power S 239 L siemens
    Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF 23SbQS Q62701-F51 oro-20 F--05 AF239S AF 239 S AF 239 af239 Germanium power S 239 L siemens

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    transistor 1548 b

    Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
    Text: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF 235b05 GGMG72 Q62701-F51 -13Silâ CE-10 aa35b05 af239s transistor 1548 b AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power

    transistor fp 1016

    Abstract: BFQ34T ON4497 FP 801 UBB361
    Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The


    OCR Scan     		PDF ON4497) BFQ34T transistor fp 1016 BFQ34T ON4497 FP 801 UBB361

    113ZE

    Abstract: No abstract text available
    Text: h "7 > V 7 $ /Transistors DTC113ZE/DTC113ZUA/DTC113ZKA k DTC113ZE/DTC113ZUA/DTC113ZKA > - > '* $ Digital Transistors Includes Resistors) ^-/Transistor Switch ÿ , î / 9 n > b ÿ > * s 7 . $ ( S S ìr tiB t' 7 • • ^ Jf^ Ü lS I/'D im e n s io n s (Unît : mm)


    OCR Scan     		PDF DTC113ZE/DTC113ZUA/DTC113ZKA 100MHz 113ZE

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon High-Voltage Transistor B F 622 • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F 623 PNP Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1052 OT-89

    MHQ6100

    Abstract: IC AL 6001
    Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON


    OCR Scan     		PDF MHQ6100A MIL-S-19500/xxx O-116) MHQ6100 IC AL 6001

    2SC 968 NPN Transistor

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5007 2SC 968 NPN Transistor

    WS300

    Abstract: No abstract text available
    Text: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo * K S P 5 5 : 60V KSPS6:80V • Collector Dissipation: Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Sym bol C haracteristic Collector-Base Voltage


    OCR Scan     		PDF KSP55/56 625mW KSP55 KSP56 -10mA -100mA WS300

    MPSA10

    Abstract: MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14
    Text: SAMS UN G SEMICONDUCTOR INC MPSA10 14E 0 | 7«lb4iq2 00073Mb S | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF 000734b MPSA10 T-29-21 625mW 100/iA, lc-10mA, lc-100mA, MPSA25 MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14

    transistor Bf 444

    Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324
    Text: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3


    OCR Scan     		PDF 53SbQS GQa4H73 Q62702-F311 6235bQS 000447b transistor Bf 444 transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­


    OCR Scan     		PDF b3b72SH 2N6166

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • Ö23b320 QQ1L7S1 S MKSIP y -2 1 - 3 3 NPN Silicon High Voltage Transistor BF 622 _ SIEMENS/ SPCLi S E M I C O N D S _ • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage


    OCR Scan     		PDF 23b320 BF622 Q62702-F568 Q62702-F1052

    BUW51.52

    Abstract: No abstract text available
    Text: _ ^2=1237 0G2âôb3 S • ~ X H"'3 3 “ i ' i SGS-THOMSON slLiOTOiOÛS S G S-THOMSON B U W 51 3DE D FAST SWITCHING POWER TRANSISTOR FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN INTERNAL SCHEMATIC DIAGRAM


    OCR Scan     		PDF

    2SC3733

    Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
    Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier


    OCR Scan     		PDF 2SA1460 2SC3733 12/PACKAGE PWS10 CycleS50 2SC3733-T La HL33 2SA1460 IMWS1

    AF289

    Abstract: Q62701-F92 Germanium Transistor Germanium power
    Text: ESC D • Ô235b05 DÜQ4QÖ3 ^ « S I E G PIMP Germanium UHF Transistor AF289 - SIEMENS AKTIENGESELLSCHAF - -T-JN07 AF 289 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly intended


    OCR Scan     		PDF 023SbOS AF289 T0119. Q62701-F92 voltage11 Q62701-F92 Germanium Transistor Germanium power

    1.4464

    Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S


    OCR Scan     		PDF 2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473

    Untitled

    Abstract: No abstract text available
    Text: f Z J *> 7 1 S C S - T H O M S O N 5iO gi |[Li ìl(Q tMD©i M J D 50 n ^ n V0LTAGE f a s t - s w it c h in g NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")


    OCR Scan     		PDF O-252 TIP50 MJD50 MJD50