TRANSISTOR S 2517 Search Results

TRANSISTOR S 2517 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR S 2517 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ph 4148 zener diode Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS	Original	DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
BQ 15 Transistor Abstract: marking 601 sot transistor bf 222 Electronic car ignition circuit Text: TELEFUNKEN ELECTRONIC 17E i> m f l ^ o c n b ooo^bos s • AL66 . S 601 T ■¡mUlFIUJlMKil?! electronic Ctmuv « IfechnoioQtM T -3 3 -a ? Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application	OCR Scan	SS100 BQ 15 Transistor marking 601 sot transistor bf 222 Electronic car ignition circuit	PDF
C 2577 transistor Abstract: TRANSISTOR C 2577 marking EB 202 transistor BF885S transistor MARKING CODE RJ TRANSISTOR Bf 264 transistor bf 885 12A3 T0126 BF transistor Text: TELEFUNKEN ELECTRONIC 17E » • fl^ OCnb QOGTMB^ 0 1 BF 885 S miHNIMCSlIM electronic Crtttn* T«cbnotoö*s Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages In TV receivers Features: • High reverse voltage • No frFE-drift dependent of temperature	OCR Scan	T0126 15A3DIN C 2577 transistor TRANSISTOR C 2577 marking EB 202 transistor BF885S transistor MARKING CODE RJ TRANSISTOR Bf 264 transistor bf 885 12A3 T0126 BF transistor	PDF
logos 4012B Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX	OCR Scan	TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485	PDF
diode B14A Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070 Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)	OCR Scan	00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070	PDF
MPQ6842 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor MPQ6842 NPN/PNP Silicon V o lta g e a n d c u rre n t a re COMPLEMENTAR* rv i rv i ETlilUJUJliimtlj n e g a tiv e fo r P N P t r a n s is to r s TYPE B MAXIM UM RATIN G S Sym bol V a lu e	OCR Scan	MPQ6842 MPQ6842. MPQ6842	PDF
w26c Abstract: B120Cnb B0551 Transistor S 2517 BF 238 transistor transistor marking code 41 BF 883S 12A3 T0126 15A3DIN Text: « I TELEFUNKEN ELECTRONIC 17E ]> • 000^35 * BF 883 S TTlILilFISSMIISlM electronic Crutivelfchnotogies T-22-06~ Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /»-drift dependent of temperature	OCR Scan	T0126 15A3DIN w26c B120Cnb B0551 Transistor S 2517 BF 238 transistor transistor marking code 41 BF 883S 12A3 T0126	PDF
transistor Bc 542 Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S Text: « I TELEFUNKEN ELECTRONIC 17E D 0 1 2 0 0 ^ O D D ^ S BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature	OCR Scan	T-33-0S- JEDECTO126 transistor Bc 542 transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S	PDF
MRF260 Abstract: MRF264 MRF261 MRF260 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF260 The R F Line 5W 1 3 6 - 175 MHz R F POW ER T R A N S IS T O R NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . designed for 12.5 Volt VHF large-signal power amplifier appli cations in commercial and industrial equipment.	OCR Scan	MRF260 O-220AB MRF261 MRF262 MRF264 MRF260 MRF260 motorola	PDF
transistor rf type M 2530 Abstract: TRANSISTOR 2sA107 2SA107 T6M40F1 L38C 2SC2502 T10V40F1 T20M40F1 T3M40F1 T6V40F1 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	2SA107 2SA1075 2SA1076 2SA1077 2SA107Ã 2SA107! transistor rf type M 2530 TRANSISTOR 2sA107 T6M40F1 L38C 2SC2502 T10V40F1 T20M40F1 T3M40F1 T6V40F1	PDF
Transistor BC 227 Abstract: Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940 Text: 1 TELEFUNKEN ELECTRONIC 1?E I> a^SOD^b ODGSbll fi • AL6C S 637 T electronic CrwtiWfochnotogtes Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application for high voltages where as very low input power is required	OCR Scan	DIN41 15A3DIN Transistor BC 227 Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940	PDF
518T Abstract: 04UI marking A27 1.5A NPN power transistor TO-92 Text: TELEFUNKEN ELECTRONIC 17E D • ÖSSDÜ'ib DOO^bGl £ WËMGG . S 518T ■¡mUHFUMKlK electronic ■ CfM live Techootogtes T - 33- ? Silicon NPN Power Transistor Applications: Switching mode power supply Features; • In tripple diffusion mesa technique I Short switching times	OCR Scan	15A3DIN 518T 04UI marking A27 1.5A NPN power transistor TO-92	PDF
transistor BC 245 Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126 Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time	OCR Scan	00DRS51 flBES100 T0126 15A3DIN transistor BC 245 transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126	PDF

c 2579 power transistor Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage	OCR Scan	JEDECTO126 15A3DIN c 2579 power transistor TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ	PDF
AT8250 Abstract: AT-8250 2-18 GHz Low Noise Gallium Arsenide FET ATF-25170 Text: AVANTEK Q S OE INC GODbSbfl D 1 ATF-25170 AT-8250 0.5-10 GHz Low Noise Gallium Arsenide FET avantek ‘T - ' S I - 2 S Avantek 70 mil Package Features • • Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz • High Output Power: 21.0 dBm typical Pi dB	OCR Scan	ATF-25170 AT-8250) ATF-25170 airbrid21 AT8250 AT-8250 2-18 GHz Low Noise Gallium Arsenide FET	PDF
at8250 Abstract: AT82 AVANTEK transistor Text: AVANTEK O INC 20E J> ATF-25170 AT-8250 0.5-10 GHz Low Noise Gallium Arsenide FET avantek 'T-'zi-zs Avantek 70 mil Package Features • • • • Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical Pi dB	OCR Scan	ATF-25170 AT-8250) at8250 AT82 AVANTEK transistor	PDF
Untitled Abstract: No abstract text available Text: Thal PACKARD HEWLETT WLKM 0 .5 -1 0 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 F eatures • Low N oise Figure: 0.8 dB Typical at 4 GHz • High A ssociated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical Pi dB at 4 GHz	OCR Scan	ATF-25170 ATF-25170 44475A4 0D1770b	PDF
AT82 Abstract: AT8250 Text: W hpl HEW LETT ft"KM PACKARD ATF-25170 AT-8250 0.5-10 GHz Low Noise Gallium Arsenide FET Features • • • • 70 mil Package Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical Pi dB	OCR Scan	ATF-25170 AT-8250) AT82 AT8250	PDF
Untitled Abstract: No abstract text available Text: W A ffi HEW LETT w!!kM PACKARD 0 .5 -1 0 GHz Low N oise Gallium Arsenide FET Technical Data ATF-25170 F eatures • L ow N o ise F igure: 0.8 dB Typical at 4 GHz • H igh A sso c ia te d Gain: 14.0 dB Typical at 4 GHz • H igh O utput Pow er: 21.0 dBm Typical P, dB at 4 GHz	OCR Scan	ATF-25170 5965-8712E 59664978E	PDF
BU 508 transistor Abstract: FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3 Text: TELEFUNKEN ELECTRONIC 17E J> • Ô^OO'îb 000^471 * ■ AL QG BU 508 DR 'V ITiyitFMlMKIM electronic Creato*"fechnotogies T-3 3 - I I Silicon NPN Power Transistor Applications: Horizontal deflection circuits in colour TV-receivers Features: • In tripple diffusion technique	OCR Scan	T-33-13 DIN41 T0126 15A3DIN BU 508 transistor FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3	PDF
TRANSISTOR BC 208 Abstract: bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517 Text: 17E D TELEFUNKEN ELECTRONIC m fi^QO^b QDQRMSR • ALGG BU 208 D ■ffmewraiH! electronic Crtativ« TKhnot6g<e9 r-33-c? Silicon NPN Power Transistor A pplications: Horizontal deflection circuits In colour TV-receivers Features: • Monolithic integrated inverse diode	OCR Scan	r-33-c? TRANSISTOR BC 208 bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517	PDF
2646 TRANSISTOR Abstract: BU908A telefunken 2650 BU908 transistor Bf 908 marking A27 0QCH513 telefunken transistor TRANSISTOR 908 p Text: TELEFUNKEN ELECTRONIC 17E » • ÔREOORb DDO'îSD'i b • BU 908 TTIiUIiFttiïiKiiK! electronic CrMlrve Tschnotogtes Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time	OCR Scan	15A3DIN 2646 TRANSISTOR BU908A telefunken 2650 BU908 transistor Bf 908 marking A27 0QCH513 telefunken transistor TRANSISTOR 908 p	PDF
K 2645 transistor Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645 Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W	OCR Scan	0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645	PDF

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TRANSISTOR S 2517 Search Results

TRANSISTOR S 2517 Result Highlights (5)

TRANSISTOR S 2517 Datasheets Context Search

ph 4148 zener diode

sx3704

BQ 15 Transistor

C 2577 transistor

logos 4012B

diode B14A

MPQ6842

w26c

transistor Bc 542

MRF260

transistor rf type M 2530

Transistor BC 227

518T

transistor BC 245

c 2579 power transistor

AT8250

at8250

Untitled

AT82

Untitled

BU 508 transistor

TRANSISTOR BC 208

2646 TRANSISTOR

K 2645 transistor