TRANSISTOR RF Search Results

TRANSISTOR RF Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR RF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor SD335 Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339 Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen	Original	PDF	Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
AN3025 Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free Text: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace	Original	PDF	AN3025 AN3025 transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
DEVICE T76 Abstract: 2SC4571 2SC4571-T1 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4571 NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold	Original	PDF	2SC4571 2SC4571 2SC4571-T1 DEVICE T76 2SC4571-T1
t72 marking Abstract: 2SC4570 2SC4570-T1 transistor for UHF Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4570 NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold	Original	PDF	2SC4570 2SC4570 2SC4570-T1 t72 marking 2SC4570-T1 transistor for UHF
marking R33 Abstract: 2SC4227 2SC4227-T1 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold	Original	PDF	2SC4227 2SC4227 S21e2 2SC4227-T1 marking R33 2SC4227-T1
2SC4226 Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold	Original	PDF	2SC4226 2SC4226 S21e2 2SC4226-T1 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
2SC4228 Abstract: 2SC4228-T1 TRANSISTOR R44 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold	Original	PDF	2SC4228 2SC4228 S21e2 2SC4228-T1 2SC4228-T1 TRANSISTOR R44
NTE359 Abstract: 8-32N Text: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances	Original	PDF	NTE359 175MHz 175MHz 8-32-NC-3A NTE359 8-32N
Untitled Abstract: No abstract text available Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver	Original	PDF	NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW,
Untitled Abstract: No abstract text available Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	PDF	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809
SGA8543Z-EVB2 Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	PDF	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
NTE346 Abstract: npn 1W 40V to39 Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver	Original	PDF	NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW, npn 1W 40V to39
BFR93 application note Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF	Original	PDF	BFT93 R77/02/pp10 BFR93 application note

BFT93 Abstract: BFR93 application note bfr93 MSB003 BFR93A Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF	Original	PDF	BFT93 R77/02/pp10 BFT93 BFR93 application note bfr93 MSB003 BFR93A
SOT333 Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage	Original	PDF
SOT23 W1P NXP Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	Original	PDF	BFT92 MSB003act R77/02/pp10 SOT23 W1P NXP
2SC5436 Abstract: NESG2107M33 Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA868TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor	Original	PDF	PA868TS 2SC5436, NESG2107M33) S21e2 2SC5436 NESG2107M33 2SC5436 NESG2107M33
Transistor C G 774 6-1 Abstract: transistor 2N4033 2N4033 Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53	Original	PDF	2N4033 Transistor C G 774 6-1 transistor 2N4033 2N4033
TP3400 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output	OCR Scan	PDF	TP3400 TP3400
BFR96 Abstract: BFR96 TRANSISTOR transistor bfr96 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers	OCR Scan	PDF	BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96
2SC2312 Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating	OCR Scan	PDF	2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Untitled Abstract: No abstract text available Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BD179 NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package,	OCR Scan	PDF	BD179 BD179 OT-32 OT-32 O-126)
Transistor C G 774 6-1 Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers	OCR Scan	PDF	BFR96 Transistor C G 774 6-1 C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1

TRANSISTOR RF Search Results

TRANSISTOR RF Result Highlights (5)

TRANSISTOR RF Datasheets Context Search

transistor SD335

AN3025

MN1280

DEVICE T76

t72 marking

marking R33

2SC4226

2SC4228

NTE359

Untitled

Untitled

SGA8543Z-EVB2

NTE346

BFR93 application note

BFT93

SOT333

SOT23 W1P NXP

2SC5436

Transistor C G 774 6-1

TP3400

BFR96

2SC2312

Untitled

Transistor C G 774 6-1