Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR R47 Search Results

    TRANSISTOR R47 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R47 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor NEC D 586

    Abstract: TRANSISTOR R46
    Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


    OCR Scan     		2SC4095 2SC4095 VP15-00-1 IR30-00-1 WS60-00-1 transistor NEC D 586 TRANSISTOR R46 PDF

    NEC IC D 553 C

    Abstract: nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47
    Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal am plifiers from VHF band to UHF band.


    OCR Scan     		2SC4095 2SC4095 NEC IC D 553 C nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47 PDF

    nec 817

    Abstract: TRANSISTOR R46 2SC4095 transistor r47
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


    Original     		2SC4095 2SC4095 nec 817 TRANSISTOR R46 transistor r47 PDF

    NEC 7924

    Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
    Text: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1


    Original     		2SC5013 2SC5013-T1 2SC5013-T2 NEC 7924 ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538 PDF

    2SC5013

    Abstract: 2SC5013-T1 transistor r47 MARKINGR46 marking R46
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 10 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    Original     		2SC5013 2SC5013-T1 2SC5013 2SC5013-T1 transistor r47 MARKINGR46 marking R46 PDF

    CD 1691 CB

    Abstract: NEC 7924 NEC D 986 IC - 7434
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434 PDF

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558 PDF

    LT1185

    Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense


    Original     		LT1185 LT1185 transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 PDF

    LT1185CT

    Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 LT1185CT LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK PDF

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


    Original     		AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2 PDF

    LT1185

    Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		LT1185 LT1185 118500mA LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK PDF

    apx transistor

    Abstract: No abstract text available
    Text: • bbS3T31 00Z353T 113 ■ APX Philips Semiconductors_ N APIER PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor FEATURES Product specification QUICK R EFER EN CE DATA MAX. UNIT “ 30 V BF545A


    OCR Scan     		bbS3T31 00Z353T BF545A; BF545B; BF545C BF545A BF545B apx transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-4625; Rev 0; 5/09 MAX17102 Evaluation Kit The MAX17102 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for activematrix, thin-film transistor (TFT), liquid-crystal displays


    Original     		MAX17102 450mA MAX17102 PDF

    LT1120A

    Abstract: lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185 LT1185C LT1185CQ LT1185I LT1185IT
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of a FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		LT1185 LT1185 O-220 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1120A lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185C LT1185CQ LT1185I LT1185IT PDF

    Untitled

    Abstract: No abstract text available
    Text: MP3393 8-String Step-Up White LED Driver with External Transistor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3393 is a step-up controller with 8 current channel sources designed to power WLED backlights for large LCD panels. • • •


    Original     		MP3393 MP3393 202mV MP3393â SOIC28 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-4451; Rev 0; 2/09 MAX17094 Evaluation Kit Features The MAX17094 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for active-matrix, thinfilm transistor (TFT), liquid-crystal displays (LCDs). The


    Original     		MAX17094 250mA 300mA MAX17094 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-4706; Rev 0; 7/09 MAX17100 Evaluation Kit The MAX17100 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for active-matrix, thinfilm transistor (TFT), liquid-crystal displays (LCDs). The


    Original     		MAX17100 500mA regulato00 MAX17100 PDF

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    MAX17119EVKIT

    Abstract: max17119E Q1/C84-8
    Text: 19-5078; Rev 1; 4/10 MAX17119 Evaluation Kit The MAX17119 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17119 (IC) 10-channel, high-voltage, level-shifting scan driver for active-matrix, thin-film transistor (TFT),


    Original     		MAX17119 MAX17119 10-channel, MAX17119EVKIT max17119E Q1/C84-8 PDF

    AN1370

    Abstract: AN-1370 LM5034 LM5034EVAL si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration
    Text: National Semiconductor Application Note 1370 Dennis Morgan February 2005 Introduction slope compensation, direct interface with opto-coupler transistor, and thermal shutdown. The LM5034EVAL evaluation board provides the power supply design engineer with a fully functional 200W dual interleaved DC-DC power switching regulator using forward/


    Original     		LM5034EVAL LM5034 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. AN-1370 AN1370 AN-1370 si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration PDF

    AN6247

    Abstract: phase sequence detector chroma key CA3126 RCA Solid State signal detection circuit "peak hold" constant vol transistor horizontal section tv transistor r47
    Text: Application of the CA3126 Chroma-Processing IC Using Sample-and-Hold Circuit Techniques Application Note AN6247 As contrasted with prior state-of-the-art IC designs, sample and-hold techniques are used in the phase detectors for the AFPC and the ACC-killer loops of the CA3126. The


    Original     		CA3126 AN6247 CA3126. BTR-19, AN6247 phase sequence detector chroma key RCA Solid State signal detection circuit "peak hold" constant vol transistor horizontal section tv transistor r47 PDF

    motorola AN1308

    Abstract: 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		AN1308/D AN1308 AN1308/D* AN1308/D motorola AN1308 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100 PDF