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    TRANSISTOR R02 Search Results

    TRANSISTOR R02 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF177

    Abstract: 8830 transistor transistor marking code HF
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of 2003 Jul 21 2004 Dec 17 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain


    Original     		PDF M3D060 BLF177 MBB072 MLA876 OT121B SCA76 R02/05/pp19 BLF177 8830 transistor transistor marking code HF

    CPC1303

    Abstract: EIA-481-2 CPC1303GRTR
    Text: CPC1303 Single-Transistor Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio Saturation Voltage Input Control Current Rating 30 200 0.5 0.2 Description Units VP % V mA The CPC1303 is a unidirectional input optocoupler with a single-transistor output, which uses optically


    Original     		PDF CPC1303 CPC1303 5000Vrms CPC1466. DS-CPC1303-R02 EIA-481-2 CPC1303GRTR

    CPC1001N

    Abstract: CPC1001
    Text: CPC1001N Unidirectional Input, Single-Transistor Output Optocoupler Breakdown Voltage BVCEO Current Transfer Ratio Min Saturation Voltage Input Control Current CPC1001N 30 100 0.3 0.2 Units V % V mA CPC1001N is a unidirectional input optocoupler with a single transistor output. Current transfer ratios


    Original     		PDF CPC1001N CPC1001N 100mA 1500Vrms E76270 DS-CPC1001N-R02 CPC1001

    b1009 transistor

    Abstract: B1009 ba656 ba9700-series BA6566
    Text: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more


    Original     		PDF BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF BA9700AFV 470kHz) BU8874lBU8874F BU8874 BU8874F 03iOl b1009 transistor B1009 ba656 ba9700-series BA6566

    LDA102

    Abstract: EIA-481-2 J-STD-033
    Text: LDA102 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage Current Transfer Ratio Minimum Saturation Voltage Input Control Current Rating 30 50 0.5 1 Description Units VP % V mA The LDA102 is a unidirectional-input optocoupler


    Original     		PDF LDA102 LDA102 3750Vrms DS-LDA102-R02 EIA-481-2 J-STD-033

    LDA102

    Abstract: No abstract text available
    Text: LDA102 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage Current Transfer Ratio Minimum Saturation Voltage Input Control Current Rating 30 50 0.5 1 Description Units VP % V mA The LDA102 is a unidirectional-input optocoupler


    Original     		PDF LDA102 LDA102 3750Vrms DS-LDA102-R02

    EIA-481-2

    Abstract: LDA201 LDA201S LDA201STR
    Text: LDA201 Dual Unidirectional Input Single Transistor Output Optocouplers Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Description Units VP % V mA LDA201 is a dual unidirectional optocoupler with


    Original     		PDF LDA201 LDA201 E76270 100mA 3750Vrms DS-LDA201-R02 EIA-481-2 LDA201S LDA201STR

    EIA-481-2

    Abstract: LDA202
    Text: LDA202 Dual Bidirectional Input Single Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP % V mA Description LDA202 is a dual bidirectional input optocoupler with


    Original     		PDF LDA202 LDA202 100mA 3750Vrms E76270 DS-LDA202-R02 EIA-481-2

    Untitled

    Abstract: No abstract text available
    Text: LDA203 Dual Unidirectional Input, Single-Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Description Units VP % V mA LDA203 is a dual unidirectional optocoupler with


    Original     		PDF LDA203 LDA203 100mA 3750Vrms E76270 LDA203S LDA203STR DS-LDA203-R02

    EIA-481-2

    Abstract: LDA200 LDA200S LDA200STR
    Text: LDA200 Dual Bidirectional Input Single Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP % V mA Description LDA200 is a dual bidirectional input optocoupler with


    Original     		PDF LDA200 LDA200 100mA 3750Vrms E76270 DS-LDA200-R02 EIA-481-2 LDA200S LDA200STR

    LDA211

    Abstract: No abstract text available
    Text: LDA211 Dual Unidirectional Input Darlington Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA211 is a dual unidirectional input optocoupler


    Original     		PDF LDA211 LDA211 100mA 3750Vrms E76270 DS-LDA211-R02

    Untitled

    Abstract: No abstract text available
    Text: LDA210 Dual Bidirectional Input Darlington Transistor Output Optocoupler Perameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA210 is a dual bidirectional input optocoupler with


    Original     		PDF LDA210 LDA210 100mA 3750Vrms E76270 DS-LDA210-R02

    CGH27015S

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which


    Original     		PDF CGH27015S CGH27015S CGH2701

    CGH27015S

    Abstract: 003536 54-619 msl 9351 06752
    Text: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which


    Original     		PDF CGH27015S CGH27015S CGH2701 003536 54-619 msl 9351 06752

    LQ10DX01

    Abstract: tcl tv D1024 transistor 11-G02 D1021 D1022 D1023 DF9B-15P-1V DF9B-15S-1V DF9B-21P-1V
    Text: LQ10DX01 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 10.4" The SHARP LQ10DX01 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,


    Original     		PDF LQ10DX01 LQ10DX01 tcl tv D1024 transistor 11-G02 D1021 D1022 D1023 DF9B-15P-1V DF9B-15S-1V DF9B-21P-1V

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN Silicon planar epitaxial R02731B20W microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 jj.s pulse width, 10% duty factor • Diffused emitter ballasting resistors


    OCR Scan     		PDF R02731B20W 711002b

    transistor 1BT

    Abstract: transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES R02731B50W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium


    OCR Scan     		PDF R02731B50W transistor 1BT transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor

    LT 5251

    Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
    Text: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >


    OCR Scan     		PDF 02SD4711 cycleS50% LT 5251 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial * - * microwave power transistor R02731B20W FEA TUR ES Q U IC K R E F E R E N C E DATA • Suitable for short and medium Microwave performance up to T mb = 25 °C in a common base class C


    OCR Scan     		PDF R02731B20W 711005b

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF R02731B10W 0CH3CI54

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF R02731B50W 711002b

    K 3053 TRANSISTOR

    Abstract: k 246 transistor
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF R02731B10W 0CH3C54 K 3053 TRANSISTOR k 246 transistor

    25CC

    Abstract: MJE18206 MJF18206 J280 LB013
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18206 M JF18206 D esigner’s Data Sheet SWITCHMODE ™NPN Bipolar Power Transistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS


    OCR Scan     		PDF MJE/MJF18206 O-220 MJE18206 AN1040. 25CC MJF18206 J280 LB013

    UPC78M24A

    Abstract: MPC78M18AHF MPC78M12 UPC78M05 MPC78M15AHF 78m15a MPC78 78M07A
    Text: ¡» m ìa S iiti BIPOLAR ANALOG INTEGRATED CIRCUITS juPC78M00A SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION ¿¿PC78M00A series are monolithic three terminal positive regulators which employ internally current limiting,therma1 shut down,output transistor safe operating area protection make them essentially indestructible.


    OCR Scan     		PDF uPC78M00A PC78M00A /iPC78M00 MPC78M05AHF iiPC73M06AHF MPC78M08AHF MPC7BM09AHF MPC78M10AHF iPC78M12AHF MPC78M1 UPC78M24A MPC78M18AHF MPC78M12 UPC78M05 MPC78M15AHF 78m15a MPC78 78M07A