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    transistor 1BT

    Abstract: transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES R02731B50W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium


    OCR Scan     		R02731B50W transistor 1BT transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor PDF

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    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness


    OCR Scan     		R02731B50W 711002b PDF