Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR R 29 MF Search Results

    TRANSISTOR R 29 MF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R 29 MF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4435a

    Abstract: 4435 4435 transistor F 4435a 4435 m sanyo CG LC587004 LC587006 LC587008 QFP80
    Text: Ordering number : EN*4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8, 12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC587008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD


    Original     		LC587008, LC587004, LC587006 LC587008 80-pin LC5870 4435a 4435 4435 transistor F 4435a 4435 m sanyo CG LC587004 QFP80 PDF

    tokin 108

    Abstract: No abstract text available
    Text: MF1521-01 SYSTEM POWER SUPPLY IC S1F81100 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		MF1521-01 S1F81100 t587-5812 tokin 108 PDF

    circuit diagram of speech to text

    Abstract: 1420hz SA1600 SA2531 telephone ring generator circuit G312AM
    Text: Versatile Single Chip Telephone with 10 Number Repertory Dialler and PIN Lock VDPHV SA1600 - Preliminary Key Features Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Description Line/Speech circuit, LD/MF repertory dialler and tone ringer on one 28 pin CMOS chip NET 4 compatible


    Original     		SA1600 circuit diagram of speech to text 1420hz SA2531 telephone ring generator circuit G312AM PDF

    design smps 500 watt TL494

    Abstract: 600 watt uc3844 smps schematic UC3842 smps design with TL431 250 watt uc3844 smps schematic MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 p6n60e MC34063 Boost MOSFET uc3844 smps power supply mc34063 step up with mosfet transformer orega 40346
    Text: SWITCHMODE t Power Supplies Reference Manual and Design Guide SMPSRM/D Rev. 0, 5/1999 SMPSRM Mfax is a trademark of Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MF302-12 S1F70000 Series Technical Manual IEEE1394 POWER SUPPLY Controller IC S1R77801F00A S1F79100 Technical Manual S1F70000 Series Technical Manual ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epson.co.jp/device/ This manual was made with recycle paper,


    Original     		MF302-12 IEEE1394 S1R77801F00A S1F79100 S1F79100Y OT89s. 100ppm/ PDF

    ad 152 transistor

    Abstract: NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR
    Text: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high


    Original     		MTP29N15E/D MTP29N15E ad 152 transistor NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR PDF

    NT 407 F MOSFET TRANSISTOR

    Abstract: AN569 MTP29N15E SMD310
    Text: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high


    Original     		MTP29N15E/D MTP29N15E NT 407 F MOSFET TRANSISTOR AN569 MTP29N15E SMD310 PDF

    Untitled

    Abstract: No abstract text available
    Text: MF1521-03 Power Supply IC S1F81100 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		MF1521-03 S1F81100 E-08190 PDF

    S1F81100F0E1000

    Abstract: No abstract text available
    Text: MF1521-03 Power Supply IC S1F81100 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		MF1521-03 S1F81100 any2490 S1F81100F0E1000 PDF

    TT2140

    Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
    Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage


    Original     		EP106A O-220FI5H TT2140 transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140 PDF

    diode 437 KZ

    Abstract: No abstract text available
    Text: 1DI3OOZ-14O 300a • O utline D ra w in g s POWER TRANSISTOR MODULE 13 21 ,29 8r T " 16 I« • 4# ' F e a tu r e s • m f H igh V o lta g e • 7 'J — KP*g/tt • A S O ^ /a I ' • Îfeifciïfc k BX m In c lu d in g Free W h e e lin g D io d e _ . .


    OCR Scan     		1DI3OOZ-14O diode 437 KZ PDF

    AT-00535

    Abstract: Silicon Bipolar Transistor MICRO-X
    Text: HEWLETT-PACKARD/ CMPNTS blE » HEW LETT PA C K A R D • AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 mfcro-X Package Features • • 4M47SÄM GGGt177li 3S3 « H P A 16.0 dBm typical Pi dsat 2.0 GHz 10.5 dB typical Gi dBat 2.0 GHz • 2.5 dB typical NFo at 2.0 GHz


    OCR Scan     		4M47564 AT-00535 AT-00535 Silicon Bipolar Transistor MICRO-X PDF

    transistor 667

    Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
    Text: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2


    OCR Scan     		BFR93A BFT93. transistor 667 BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery


    OCR Scan     		OT227B BUK617-500AE/BE BUK617 0030fib4 1E-02 PDF

    44358

    Abstract: 4435a serial counter 24129 lek 923 LC587004 LC587006 LC587008 QIP80A 587006
    Text: Ordering number : ENÌK4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8,12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC5B7008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD


    OCR Scan     		K4435A LC587008, LC587004, LC587006 LC5B7008 80-pin LC5870 44358 4435a serial counter 24129 lek 923 LC587004 LC587008 QIP80A 587006 PDF

    BUK105-50L

    Abstract: BUK105-50S BUK105-50US
    Text: PH I L I P S I N T E R N A T I O N A L bSE D B 711GÖSb DGL3ÖSH Philips Semiconductors 41=1 « P H I N Product Spécification PowerMOS transistor BUK105-50L/S Logic level DESCRIPTION Monolithic temperature and


    OCR Scan     		711DSSb BUK105-50L/S BUK105-50LP/SP 711D62b buk105-50us BUK105-50L BUK105-50S PDF

    MICRO SWITCH FREEPORT. ILL. U.S.A

    Abstract: VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3
    Text: VX SERIES CHART 1 R 3,0 ABSOLUTE MAXIMUM RATINGS SUPPLY VOLTAGE Vs VOLTAGE EXTERNALLY APPLIED TO OUTPUT LOAD ON OUTPUT TEMPERATURE /H\ - 2 4 TO + 2 8 VOLTS DC 28 VOLTS DC MAX WITH OUTPUT TRANSISTOR IN OFF CONDITION ONLY -0.5 VOLTS MIN WITH OUTPUT TRANSISTOR IN


    OCR Scan     		CO79902 PR22156 C08374-1 C093789 R23775 PR237B7 PR23760 C093843 C095107 CO-95704 MICRO SWITCH FREEPORT. ILL. U.S.A VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3 PDF

    motorola 9100-11

    Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
    Text: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC


    OCR Scan     		MC33120/D MC33120 motorola 9100-11 Battery Managements MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21 PDF

    TP5125

    Abstract: BUK101-50GS T0220AB
    Text: PHILIPS INTERNATIONAL hSE ]> • 7110 0 5 b 00b3û0a 5 3 * \ « P H I N Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, Intended as a general purpose switch for


    OCR Scan     		711005b K101-50GS lISL/llsL25/C BUK101-50GS TP5125 BUK101-50GS T0220AB PDF

    Y8101

    Abstract: Fluke 179 Multimeter circuit diagram FLUKE 79 series II multimeter diagram Fluke 19 Multimeter circuit diagram fluke 8012A fluke Y8101 FLUKE Clamp meter diagram FLUKE 8010a rms dc converter FLUKE 30 Clamp meter diagram FLUKE 79 III manual
    Text: 8010A/8012A Digital Multimeters Instruction Manual FLUKE 8010A/8012A Digital Multimeters Instruction Manual P/N 491944 August 1978 Rev 2 1/85 1985, John Fluke Mfg. Co., Inc. All rights reserved. Litho in U.S.A. IF L U K E I - — ® Dear Customer: Congratulations! We at Fluke are proud to present you with the 8010A and


    OCR Scan     		010A/8012A 012A-1701 012A-1101 Y8101 Fluke 179 Multimeter circuit diagram FLUKE 79 series II multimeter diagram Fluke 19 Multimeter circuit diagram fluke 8012A fluke Y8101 FLUKE Clamp meter diagram FLUKE 8010a rms dc converter FLUKE 30 Clamp meter diagram FLUKE 79 III manual PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0-07 OHM This advanced TMOS E-FET is designed to withstand high


    OCR Scan     		MTB29N15E/D MTB29N15ED PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    xr2917

    Abstract: 2917cp speedometers transistors 250 TH 16J2
    Text: Z * EXAR X R -2 9 1 7 Frequency-to-Voltage Converter FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The X R -29 1 7 Freq ue n cy-to -V o ltag e C onverter is a high accuracy co nve rter consisting o f in p u t co m pa ra to r w ith 40 m V hysteresis, charge pum p, Zener regulator, and o u t­


    OCR Scan     		XR-2917 XR-1568M XR-1568/XR-1468C XR-1468/1568 xr2917 2917cp speedometers transistors 250 TH 16J2 PDF

    rc 3150

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent SEMICONDUCTOR TECHNICAL DATA by MTP29N15E/D Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0-07 OHM This advanced TM O S E -F E T is designed to w ithstand high


    OCR Scan     		MTP29N15E/D rc 3150 PDF