TRANSISTOR R 2003 Search Results

TRANSISTOR R 2003 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR R 2003 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G8051S Abstract: G8551S Text: ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8051S N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8051S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio	Original	2004/11/29B G8051S G8051S 700mA G8551S G8551S	PDF
2SC640 Abstract: transistor 2sc640 2sc640 transistor 2sc640 equivalent transistor 2sa733 TRANSISTOR R 2003 2SA733 2SA733 Y hFE is transistor Text: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.	Original	2SC640 2SA733 100mA, 2SC640 transistor 2sc640 2sc640 transistor 2sc640 equivalent transistor 2sa733 TRANSISTOR R 2003 2SA733 2SA733 Y hFE is transistor	PDF
2SC640 Abstract: transistor 2sc640 2sc640 equivalent 2sc640 transistor 2SA733 2SA733 Y Text: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.	Original	2SC640 2SA733 100mA, 2SC640 transistor 2sc640 2sc640 equivalent 2sc640 transistor 2SA733 2SA733 Y	PDF
2SC640 Abstract: transistor 2sc640 2sc640 transistor 2SA733 hFE is transistor Text: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.	Original	2SC640 2SA733 100mA, 2SC640 transistor 2sc640 2sc640 transistor 2SA733 hFE is transistor	PDF
2SC640 Abstract: 2sc640 equivalent transistor 2sc640 transistor 2sa733 2SA733 hFE is transistor 2sc640 transistor Text: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.	Original	2SC640 2SA733 100mA, 2SC640 2sc640 equivalent transistor 2sc640 transistor 2sa733 2SA733 hFE is transistor 2sc640 transistor	PDF
G8051S Abstract: G8551 G8551S Text: ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8551S P N P E P I TA X I A L S I L I C O N T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR Description The G8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio	Original	2004/11/29B G8551S G8551 700mA G8051S -20reserved. G8051S G8551S	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
2sa 940 Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are	OCR Scan	2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu	PDF
FF50R12KF2 Abstract: FF50R12 Text: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module	OCR Scan	FFSOR12COKF3 FF50R12 50R10KF2/B 34032T7 FF50R12KF2	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
FF 25 R 1200 kf Abstract: No abstract text available Text: FF 150 R 12 KF Therm ische Eigenschaften Therm al properties Ftthjc DC, pro B austein/p e r module 0,055 5C/W C/W DC, pro Zweig / per arm 0,11 C/W RthCK pro B au stein/p e r m odule 0,03 cm pro Zweig /p e r arm 0,06 Transistor Transistor Elektrische Eigenschaften	OCR Scan	R12Q0KF< FF 25 R 1200 kf	PDF
16 pin diagram of uln 2003 Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001 Text: S ig rietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N These high-voltage, high-current D a rlirg to n transistor arrays are com prised o f seven silicon NPN D a rlington	OCR Scan	600mA ULN-2001 16 pin diagram of uln 2003 ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001	PDF
Untitled Abstract: No abstract text available Text: FF 100 R 06 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values Ic Therm ische Eigenschaften DC, pro Baustein / R th J C R th C K 600 V 100 A Thermal properties 0 ,1 5 5 0 ,3 1 0 ,0 6	OCR Scan	34G32C17	PDF
Untitled Abstract: No abstract text available Text: FZ 400 R 12 KF Therm ische Eigenschaften Therm al properties 0,052 °C/W RthJC DC, pro B a u ste in /p e r module Transistor Transistor Elektrische Eigenschaften Electrical properties RthCK 0,03 pro B a u s te in /p e r module °C/W Maximum rated values 1200	OCR Scan	34032T7 0G02G11	PDF

7SR10 Abstract: No abstract text available Text: FF 75 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,11 DC, pro Z w e ig /p e r arm	OCR Scan	FFT5B12KF2 34035T7 7SR10	PDF
2N5179 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 4.5 dB @ 200 MHz HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICO N RF HIGH FREQ UENCY TRANSISTOR . . . designed p r im a r ily fo r use in high -g a in , lo w -n o is e a m p lifie r , o s c il la to r, and m ix e r a p p lic a tio n s .	OCR Scan	2N5179 35flo 2N5179	PDF
I1130 Abstract: No abstract text available Text: FZ 300 R 12 KF 2 Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,063 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES lc 1200 V 300	OCR Scan	I11300 I1130	PDF
A7800 Abstract: a 7800 Text: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module	OCR Scan	34032T7 00Q2D25 A7800 a 7800	PDF
Untitled Abstract: No abstract text available Text: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W	OCR Scan	34032T7 0002G13	PDF
L81A Abstract: 2SC2428 Text: FUJI TS U M I C R O E L E C T R O N I C S 31E D S 374*17« 001b51b T HFfll r-33'13 FUJITSU - January 1990 Edition 1.1 P R O D U C T PR O FILEZ 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 242 8 is a silicon NPN general purpose, high power switching transistor	OCR Scan	lb51b r-33-13 2SC2428 30Cjis T-33-13 L81A	PDF
Untitled Abstract: No abstract text available Text: FF 200 R 12 K L Transistor Transistor Therm ische Eigenschaften R thjc Elektrische Eigenschaften Electrical properties V CES M a xim u m rated va lu e s 1200 V 20 0 A RthCK lc Thermal properties DC, pro B a u s te in / p e r m od u le D C, pro B au ste in / p e r m od u le	OCR Scan		PDF
10J24 Abstract: No abstract text available Text: FZ 200 R 12 KF 2 Transistor Transistor Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,089 °CAN Elektrische Eigenschaften Electrical properties H öchstzulässige W erte Maximum rated values RthCK V CES lc 1200 V 200	OCR Scan	FF20QR12KF2 F300R1300 10J24	PDF
Untitled Abstract: No abstract text available Text: FF 150 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values V ces Ic Therm ische Eigenschaften Thermal properties DC, pro B austein/ per module 0 ,0 9 R th J C DC, pro Zweig / per arm	OCR Scan	34032t17	PDF
Untitled Abstract: No abstract text available Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W	OCR Scan	3403ES7	PDF

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TRANSISTOR R 2003 Search Results

TRANSISTOR R 2003 Result Highlights (5)

TRANSISTOR R 2003 Datasheets Context Search

G8051S

2SC640

2SC640

2SC640

2SC640

G8051S

2sb504

2sa 940

FF50R12KF2

la 4440 amplifier circuit diagram 300 watt

FF 25 R 1200 kf

16 pin diagram of uln 2003

Untitled

Untitled

7SR10

2N5179

I1130

A7800

Untitled

L81A

Untitled

10J24

Untitled

Untitled