TRANSISTOR QZ Search Results

TRANSISTOR QZ Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR QZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
u101b Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)	OCR Scan	uPA101B 14-pin tPA101G u101b	PDF
BUK426-200A Abstract: TTPC BUK426-200B Text: 7 = 3 ? - / / Philips Com ponents BUK426-200A/B Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic full pack envelope.	OCR Scan	BUK426-200A/B BUK426 -200A -200B -SOT199 BUK426-200A TTPC BUK426-200B	PDF
D1571 Abstract: AA0463 st cpcap zy 406 D157 DSP56300 DSP56301 G30-88 G38-87 series T212 data Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56301 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56301 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this	OCR Scan	DSP56301 AA0500 b3b72MA D1571 AA0463 st cpcap zy 406 D157 DSP56300 G30-88 G38-87 series T212 data	PDF
2N7002 MARKING Abstract: N7002 N-700-2 2N7002 X2N7002 2N7002 v02 RG252 Text: N-Channet Enhancement-Mode MOS Transistor CORPORATION \J 2N7002 DESCRIPTION ORDERING INFORMATION Calogic's 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown Bv and	OCR Scan	/170S 2N7002 N7002 OT-23 2N7002 X2N7002 443S2 000GT12 2N7002 MARKING N-700-2 2N7002 v02 RG252	PDF
MJE12007 Abstract: 221A-04 MJE-12007 Text: MOTQRCLA SC XSTRS/R 15E 0 F I b3b?2S4 0005301 Ô \| T - 3Î- I/ MOTOROLA SEMICONDUCTOR MJE12007 TECHNICAL DATA 2.5 A M P E R E H O RIZON TAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . . . specifically designed for use in small screen black and white	OCR Scan	MJE12007 MJE12007 221A-04 MJE-12007	PDF
2SA847 Abstract: 2SA847A knx-1 low noise preamplifier knx1 Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse	OCR Scan	2SA847A 2SA847A -120V 150MHz t270Hz 270Hz 2SA847 knx-1 low noise preamplifier knx1	PDF
Untitled Abstract: No abstract text available Text: P h ilip s S e m ic o n d u c to rs-S ig n e llc s F A S T T T L L o g ic S e rie s SECTION 3 Circuit Characteristics INPUT STRUCTURES There are three types of input structures used in FAST circuits: diffusion diode, PNP vertical transistor, and NPN transistor. Each of these	OCR Scan	F3037 F3040 F30244 F30245 F30640	PDF
2n3703 Abstract: No abstract text available Text: Qzn&tij aSttnL-ConcLuitoi ZPtoeLata* TELEPHONE: 973 376-2882 203TERNAVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6008 USA FAX: (973) 3764880 2N3703 P-N-P SILICON TRANSISTOR CASE OUTLINE ALl °'MENSI°NS ir> 1 ' —•- INCHES F -*- ~— 0-015 (NOTE A)	Original	203TERNAVE. 2N3703 t0010-Â 2n3703	PDF
ARDV sot 23 Abstract: DS332P Text: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high	OCR Scan	NDS332P ARDV sot 23 DS332P	PDF
QM30HA-H Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES \| QM30HA-HB 1 S MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM30HA-HB Collector c u rre n t.30A Collector-em itter v o lta g e 6 00V * hFE DC current g a in .	OCR Scan	QM30HA-HB QM30HA-HB E80276 E80271 QM30HA-H	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily Tor use in horizontal deflection circuits of colour television receivers.	OCR Scan	BU508DX OT199	PDF
Untitled Abstract: No abstract text available Text: FAIRCHILD SEMICONDUCTOR May 1996 tm NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, - high cell density, DMOS technology. This very high	OCR Scan	NDS8435	PDF
9952a Abstract: No abstract text available Text: FAIRCHILD February 1996 SEM ICONDUCTOR NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	OCR Scan	NDS9952A 9952a	PDF
19Sg Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.	Original	MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR	PDF

PCR 406 J transistor Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553 Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim	Original	MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553	PDF
2SK1488 Abstract: SC-65 Text: TOSHIBA Discrete Sem iconductors 2SK1488 Field Effect Transistor Unit in mm Silicon N Channel MOSType jt-MOS III.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance ' Rds(ON) =	OCR Scan	2SK1488 2SK1488 SC-65	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	OCR Scan	32K-WORD 32-BIT uPD431632L 768-word 32-bit S100GF-65-8ET PD431632L. PD431632LGF	PDF
transistor qz Abstract: qm50dy-2h Mitsubishi transistor Text: MITSUBISHI TRANSISTOR MODULES ! QM50DY-2H 1 i MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H 1C V c ex hFE Collector current. 50A C ollector-em itter vo lta g e 1000V DC current g a in .75 Insulated Type UL Recognized	OCR Scan	QM50DY-2H QM50DY-2H E80276 E80271 transistor qz Mitsubishi transistor	PDF
sot-23 MARKING 25J Abstract: sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222S KTN2222AS SOT-23 Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=10nA M ax. ; V ce=60V, V eb <o f f )=3 V . • Low Saturation Voltage	OCR Scan	KTN2222S/AS 150mA, KTN2907S/2907AS. KTN2222S KTN2222AS 10x8x0 sot-23 MARKING 25J sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222AS SOT-23	PDF
3TE445 Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group	OCR Scan	FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	OCR Scan	32K-WORD 32-BIT uPD431632L 768-word 32-bit	PDF
IBM vga registers Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9 Text: IC- ' fl CL-GD6340 Preliminary Data Sheet 'CIRRUS LOGIC FEATURES m 100% IBM VGA compatible at the display level • Supports SimulSCAN — displays on CRT and LCD simultaneously ■ Providesfull-colorVGAon8-or512-colorTFT Thin Film Transistor and other active-matrix or color	OCR Scan	Providesfull-colorVGAon8-or512-colorTFT CL-GD6340 CL-GD6340 IBM vga registers PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9	PDF
Untitled Abstract: No abstract text available Text: FAIRCHILD SEM ICONDUCTO R tm NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P -C hannel Features en ha n ce m e n t m o de pow er field effect • transistors are produced using Fairchild's proprietary, high cell	OCR Scan	NDS8433	PDF
SWITCHING TRANSISTOR C144 Abstract: TRANSISTOR C144 LQ10D311 C144 TRANSISTOR c144 TRANSISTOR D640 DG136 D639 D639 TRANSISTOR QZ-19-3F01 Text: LQ10D311 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 10.4" The SHARP LQ10D311 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,	Original	LQ10D311 LQ10D311 SWITCHING TRANSISTOR C144 TRANSISTOR C144 C144 TRANSISTOR c144 TRANSISTOR D640 DG136 D639 D639 TRANSISTOR QZ-19-3F01	PDF

TRANSISTOR QZ Search Results

TRANSISTOR QZ Result Highlights (5)

TRANSISTOR QZ Datasheets Context Search

u101b

BUK426-200A

D1571

2N7002 MARKING

MJE12007

2SA847

Untitled

2n3703

ARDV sot 23

QM30HA-H

Untitled

Untitled

9952a

19Sg

PCR 406 J transistor

2SK1488

Untitled

transistor qz

sot-23 MARKING 25J

3TE445

Untitled

IBM vga registers

Untitled

SWITCHING TRANSISTOR C144