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    TRANSISTOR Q7 Search Results

    TRANSISTOR Q7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Q7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    70V AC to 48v dc 40 amp converter circuit diagram

    Abstract: No abstract text available
    Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode


    Original     		PDF LT3781 350kHz 300kHz LT3710 LTC3728 550kHz, 3781f 70V AC to 48v dc 40 amp converter circuit diagram

    GHM3045

    Abstract: FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3
    Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller U FEATURES DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode


    Original     		PDF LT3781 350kHz LTC1929 300kHz LT3710 LTC3728 550kHz, 3781f GHM3045 FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3

    ltc 3781

    Abstract: 2kw mosfet half bridge converter 2kw planar transformer theory planar transformer theory P1976 LT 450 mbr 2kw power supply C3781 WE MIDCOM 0.25w resistor 1/4
    Text: Final Electrical Specifications LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode


    Original     		PDF LT3781 350kHz LTC1922-1 LTC1929 300kHz LTC3728 550kHz, 3781i ltc 3781 2kw mosfet half bridge converter 2kw planar transformer theory planar transformer theory P1976 LT 450 mbr 2kw power supply C3781 WE MIDCOM 0.25w resistor 1/4

    4 npn transistor ic 14pin

    Abstract: C10535E PA103 lowest noise audio NPN transistor
    Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:


    Original     		PDF PA103 PA103B: PA103G: 14-pin PA103 4 npn transistor ic 14pin C10535E lowest noise audio NPN transistor

    Diode marking CODE 5M

    Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original     		PDF LDTDG12GPWT1G 500mA Diode marking CODE 5M transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code

    SC-75

    Abstract: KN4L3M
    Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package • Resistors built-in type 0.3 +0.1 –0 0.15 +0.1 –0.05 • Complementary to KA4xxx PACKAGE KN4xxx SC-75 (USM) 1.6 ± 0.1


    Original     		PDF SC-75 SC-75 KN4L3M

    20M diode zener

    Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original     		PDF LDTDG12GPT1G 500mA SC-89 463C-01 463C-02. 20M diode zener 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection

    KN4L3M

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 ± 0.05 • Compact package 0.1 +0.1 –0.05 • Resistors built-in type ORDERING INFORMATION 0.8 ± 0.1 1.6 ± 0.1 • Complementary to KN4xxx


    Original     		PDF SC-75 KN4L3M

    102k1k

    Abstract: 20M diode zener LDTDG12GPLT1G
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original     		PDF LDTDG12GPLT1G 500mA OT-23 102k1k 20M diode zener LDTDG12GPLT1G

    SC-75

    Abstract: kn4a4m KN4L3M
    Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 ± 0.05 • Resistors built-in type 0.1 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE 3 0.8 ± 0.1 1.6 ± 0.1


    Original     		PDF SC-75 SC-75 kn4a4m KN4L3M

    KN4A4L

    Abstract: SC-75 KN4L3M
    Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KN4xxx 3 0.8 ± 0.1 1.6 ± 0.1


    Original     		PDF SC-75 KN4A4L SC-75 KN4L3M

    7-segment display driver

    Abstract: NTE2023 700 v power transistor NTE202
    Text: NTE2023 Integrated Circuit General Purpose, High Current 7–Segment Display Driver Description: The NTE2023 is a general purpose high current transistor array in a 16–Lead DIP type package comprised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected


    Original     		PDF NTE2023 NTE2023 500mW 7-segment display driver 700 v power transistor NTE202

    transistor Common collector configuration

    Abstract: "7 Segment Display" NTE2023 transistor Common Base connection 700 v power transistor
    Text: NTE2023 Integrated Circuit General Purpose, High Current 7−Segment Display Driver Description: The NTE2023 is a general purpose high current transistor array in a 16−Lead DIP type package comprised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected


    Original     		PDF NTE2023 NTE2023 16-Lead 500mW transistor Common collector configuration "7 Segment Display" transistor Common Base connection 700 v power transistor

    74als power consumption

    Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
    Text: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low


    Original     		PDF

    BA6251

    Abstract: BA6250 BA6250F BA6251F DIP162
    Text: Standard ICs 7-channel Darlington transistor array BA6250 / BA6250F / BA6251 / BA6251F The BA6250, BA6250F, BA6251, and BA6251F are 7-channel transistor arrays particularly suitable for interfaces between a microcomputer in a VCR and the various ICs, or between one IC and another, and for low current drives


    Original     		PDF BA6250 BA6250F BA6251 BA6251F BA6250, BA6250F, BA6251, BA6251F BA6250F DIP162

    74als power consumption

    Abstract: 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family
    Text: Fairchild Semiconductor Application Note 476 March 1995 INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54/74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have spawned other logic families such as the DM54/


    Original     		PDF DM54/74) DM54/ DM54/74LS 74als power consumption 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family

    FT1551

    Abstract: FT2551 fujitsu ring emitter
    Text: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara


    OCR Scan     		PDF 37417fe2 -r-33 FT1551 FT1E51 FT2551, 85MHz T-33-09 FT2551 fujitsu ring emitter

    Mitsubishi transistor

    Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
    Text: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B


    OCR Scan     		PDF QM1000HA-24B 1000H Mitsubishi transistor transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules

    J493

    Abstract: BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz
    Text: N AMER PHILIPS/DISCRETE 860 01684 DbE D • ^53=131 D O ^ S E D T ~ 3 3 ' Ì 1 . BLX13 Jl H.F./V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and A B and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V, The transistor is resistance stabilized and tested


    OCR Scan     		PDF bS3T31 BLX13 70MHz J493 BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz

    nte74s571

    Abstract: NTE74HC573 NTE74HC574 NTE74HCT573 NTE74S474 NTE74S573 512x8 PROM NTE74LS541 NTE74S472 NTE74LS490
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling NTE74LS445 16-Lead DIP, See Diag. 249 BCD-to-Decimal Decoder/Driver w/Open Collector Outputs NTE74S472 20-Lead DIP, See Diag. 294


    OCR Scan     		PDF NTE74426 14-Lead NTE74S474, NTE74S475 4096-Bit 512x8) NTE74S474: NTE74S475: NTE74LS445 16-Lead nte74s571 NTE74HC573 NTE74HC574 NTE74HCT573 NTE74S474 NTE74S573 512x8 PROM NTE74LS541 NTE74S472 NTE74LS490

    NTE74LS244

    Abstract: NTE74HCT244 NTE74HC259
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register Serial Input K m ^ Serial Input J £ 2 ^ v cc Shift/Load 3 Input H Input A E QA | H QH Input B [ ^ OB | NTE74221, 16-Lead DI P, See Diag. 249


    OCR Scan     		PDF NTE74199 24-Lead NTE74221, 16-Lead NTE74C221, NTE74LS221 NTE74C240, 20-Lead NTE74HC240, NTE74LS244 NTE74HCT244 NTE74HC259

    transistor d 1556

    Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
    Text: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly


    OCR Scan     		PDF flE35b05 T0119. q62701-f87 y12bl transistor d 1556 d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor AF 279

    EC900

    Abstract: BLW99 2 TMT 15-4
    Text: PHILIPS IN TE RNATIONAL bSE T> 711002b m D0b3441 J 137 PHIN BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.


    OCR Scan     		PDF OT-121. BLW99 711GflSb EC900 BLW99 2 TMT 15-4

    transistor BC 247

    Abstract: BC 247 b transistor
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445


    OCR Scan     		PDF NTE74426 14-Lead NTE74LS445 16-Lead NTE74S474, 24-Lead NTE74S475 4096-Bit NTE74HC574, 20-Lead transistor BC 247 BC 247 b transistor