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    TRANSISTOR Q26 Search Results

    TRANSISTOR Q26 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Q26 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT1185

    Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense


    Original     		PDF LT1185 LT1185 transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964

    LT1185CT

    Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 LT1185CT LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK

    LT1185

    Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 118500mA LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK

    IC-3486

    Abstract: UPC7915 UPC7905A UPC7905AHF UPC7915AHF UPC7912AHF nec d 882 p datasheet MP-45G PC7912AHF PC7915AHF
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC7900A Series THREE TERMINAL NEGATIVE VOLTAGE REGULATOR DESCRIPTION µPC7900A series are monolithic three terminal negative regulators which employ internally current limiting, thermal shut down, output transistor safe operating area protection make them essentially indestructible.


    Original     		PDF PC7900A PC7905AHF IC-3486 UPC7915 UPC7905A UPC7905AHF UPC7915AHF UPC7912AHF nec d 882 p datasheet MP-45G PC7912AHF PC7915AHF

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 1185fd

    LT1120A

    Abstract: lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185 LT1185C LT1185CQ LT1185I LT1185IT
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of a FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 O-220 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1120A lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185C LT1185CQ LT1185I LT1185IT

    marking code 1p

    Abstract: No abstract text available
    Text: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory


    Original     		PDF 72QM2 R1Q3A7236ABG R1Q3A7218ABG R1Q3A7218ABG 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218 marking code 1p

    Untitled

    Abstract: No abstract text available
    Text: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory


    Original     		PDF 72QM2 R1Q3A7236ABB R1Q3A7218ABB R1Q3A7218ABB 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit R10DS0141EJ0100 R1Q3A4436RBG 304-word 36-bit R1Q3A4418RBG 608-word 18-bit

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit R10DS0140EJ0100 R1Q2A4436RBG 304-word 36-bit R1Q2A4418RBG 608-word 18-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324185B-A, 44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF PD44324185B-A, 44324365B-A 36M-BIT PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit

    PD44324185BF5-E35-FQ1

    Abstract: No abstract text available
    Text: Datasheet PD44324185B-A μPD44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0037EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF PD44324185B-A PD44324365B-A 36M-BIT R10DS0037EJ0100 PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit PD44324185BF5-E35-FQ1

    pot core inductor

    Abstract: 2N33904 2N33904 transistor MBR140P RC4391N SP-Cap/ Polymer Aluminum Capacitors RC4190 RC4391 RV4391 Stackpole ferrite
    Text: www.fairchildsemi.com RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability • 8-lead mini-DIP or S.O. package • Versatile —


    Original     		PDF RC4391 RC4391 DS30004391 pot core inductor 2N33904 2N33904 transistor MBR140P RC4391N SP-Cap/ Polymer Aluminum Capacitors RC4190 RV4391 Stackpole ferrite

    Operational Transconductance Amplifier pspice

    Abstract: transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC

    2N33904

    Abstract: 2N33904 transistor Stackpole ferrite MBR140P 2N3635 MOTOROLA RM4391 2n3904 npn fairchild beta Dale Resistor 7501 1N914 RC4391
    Text: PRODUCT SPECIFICATION RC4391 Pin Descriptions Pin Assignments LBR 1 8 VFB Pin Number Pin Function Description LBD 2 7 VREF 1 Low Battery Resistor LBR CX 3 6 +VS 2 Low Battery Detector (LBD) 3 Timing Capacitor (CX) 4 Ground 5 External Inductor (LX) 6 +Supply Voltage (+VS)


    Original     		PDF RC4391 RV4391 RM4391 DS30004391 2N33904 2N33904 transistor Stackpole ferrite MBR140P 2N3635 MOTOROLA RM4391 2n3904 npn fairchild beta Dale Resistor 7501 1N914 RC4391

    transisTOR C124

    Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 transistor directory TR BC 548 TI 121 Transistor opa660 pspice transistor c202
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF

    D2061 transistor

    Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
    Text: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)


    Original     		PDF MD0604120A3 SA-VK650GCP SA-VK650GC/GN/GS/GCS/GCT-S, MD0604118C3] SC-VK650 SA-VK650 SB-VK650 SB-WVK650 0A072 F2G0J470A031 D2061 transistor B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064

    motorola AN1308

    Abstract: 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		PDF AN1308/D AN1308 AN1308/D* AN1308/D motorola AN1308 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100

    ELMWOOD SENSORS

    Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		PDF AN1308/D AN1308 AN1308/D* ELMWOOD SENSORS AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD

    IC AND GATE 7408

    Abstract: IC 7408 pin DIAGRAM OF IC 7408 IC 7408 application circuit function IC 7408 7408 voltage regulator T310 kemet 7408 ic diagram IC 7408 and function IC 7408 AND
    Text: INTRODUCTION Timing functions until recently have been somewhat neglected by integrated circuit manufacturers The primary reason was the extremely wide range of input and output signals currently incorporated in discrete designs In addition power supply voltages varied over a ten to one range


    Original     		PDF LM122 IC AND GATE 7408 IC 7408 pin DIAGRAM OF IC 7408 IC 7408 application circuit function IC 7408 7408 voltage regulator T310 kemet 7408 ic diagram IC 7408 and function IC 7408 AND

    Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs

    Abstract: No abstract text available
    Text: 1560 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 59, NO. 6, JUNE 2011 Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs Nicolas G. Constantin, Member, IEEE, Peter J. Zampardi, Senior Member, IEEE, and Mourad N. El-Gamal, Member, IEEE


    Original     		PDF

    RTL 602 W

    Abstract: IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002
    Text: ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! "#$%#!&"'! $*+*,*-(,! ! ./012341! (567893:! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! (;<),!


    Original     		PDF I/08/4! 65134B 086C3 9E73B 518D9' I5134! M0934N 58D2BD RTL 602 W IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002

    3055E

    Abstract: D3055 atech
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is


    OCR Scan     		PDF 3055E Y145M. D3055 atech