HIGH VOLTAGE PNP POWER TRANSISTOR
Abstract: MJE5852 l5 transistor PNP
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching
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MJE5852
MJE5852
O-220
HIGH VOLTAGE PNP POWER TRANSISTOR
l5 transistor PNP
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MJE5852
Abstract: No abstract text available
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using High
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MJE5852
MJE5852
O-220
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2N6668
Abstract: No abstract text available
Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1
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2N6668
O-220
2N6668
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CMLT591E
Abstract: pin ic marking code 60 TRANSISTOR sot-563
Text: CMLT591E SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VCE SAT 1.0 Amp transistor, epoxy molded in a space saving PICOmini SOT-563 surface mount package and designed for applications
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CMLT591E
CMLT591E
OT-563
OT-563
100mA
500mA
100MHz
20-January
pin ic marking code 60
TRANSISTOR sot-563
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Untitled
Abstract: No abstract text available
Text: CMLT591E w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VCE SAT 1.0 Amp transistor, epoxy molded in a space saving PICOmini SOT-563 surface mount package and designed for applications
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CMLT591E
CMLT591E
OT-563
OT-563
100mA
500mA
100MHz
20-January
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l5 transistor PNP
Abstract: BDX54F
Text: BDX54F SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION
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BDX54F
BDX54F
O-220
O-220
l5 transistor PNP
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IC 30mA
Abstract: BSS65 l5 transistor PNP partmarking 6 Cc BSS65R DSA003680
Text: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 ✪ PARTMARKING DETAIL BSS65 - L1 BSS65R - L5 BSS65 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12
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BSS65
BSS65
BSS65R
-10mA,
-30mA,
IC 30mA
l5 transistor PNP
partmarking 6 Cc
DSA003680
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TIP102
Abstract: TIP105
Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING
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TIP105
TIP105
O-220
TIP102.
O-220
P011CI
TIP102
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TIP102
Abstract: TIP105
Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING
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TIP105
TIP105
O-220
TIP102.
O-220
TIP102
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MJE2955T
Abstract: MJE3055T MJE2955T ST TO-220 JEDEC "Silicon Power Transistors" 4 npn transistor ic L7 diode mje3055T data TO-220 COMPLEMENTARY SILICON POWER TRANSISTORS
Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
O-220
MJE2955T
MJE2955T ST
TO-220 JEDEC
"Silicon Power Transistors"
4 npn transistor ic
L7 diode
mje3055T data
TO-220
COMPLEMENTARY SILICON POWER TRANSISTORS
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st marking code
Abstract: No abstract text available
Text: 2STA1837 PNP power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequency, typical fT = 70 MHz Applications ■ Audio power amplifier ■ Drive stage amplifier 3 1 2
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2STA1837
2STC4793
O-220FP
st marking code
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MJE3055T
Abstract: l5 transistor PNP MJE305 MJE2955T SGS-Thomson P011C SGS-Thomson MJE3055T mje3055T data
Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
O-220
l5 transistor PNP
MJE305
MJE2955T
SGS-Thomson
P011C
SGS-Thomson MJE3055T
mje3055T data
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MPS-L51
Abstract: transistor BF 2030
Text: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage
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MPS-L51
MPS-L51
transistor BF 2030
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR . HIGH VOLTAGE CAPABILITY APPLICATIONS: . SWITCHING REGULATORS . MOTOR CONTROL . INVERTERS DESCRIPTION The MJE5852 is manufactured using high voltage
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MJE5852
MJE5852
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AF 239 S
Abstract: AF 239 af239 Germanium power S 239 L siemens
Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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23SbQS
Q62701-F51
oro-20
F--05
AF239S
AF 239 S
AF 239
af239
Germanium power
S 239 L siemens
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON MDœ Ë[LËOTfô®«I 2 N6668 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE SWITCHING AND
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N6668
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transistor on 4409
Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
Text: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).
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EN4409
2SA1830/2SC4734
2SA1830
2SC4734
2SA1830/2SC4734
transistor on 4409
on 4409
5SA18
2SC473
2SC4734
transistor t5c
2SA1830
5sa1
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2SB817
Abstract: 2SD1047 2s8817 transistor 2sd1047 transistor 2sb817
Text: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP 2SB817 2SB817 transistor is designed for use in general purpose power amplifier,application FEATURES: * Collector-Emitter Voltage V CE0= 140V Min * DC Current Gain hFE= 60-200@ lc= 1.0A * Complement to 2SD1047
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2SB817
2SD1047
2SD1047
2s8817
transistor 2sd1047
transistor 2sb817
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MJE30*T
Abstract: MJE2955T transistor MJE3055T MJE3055T
Text: Ill MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera^ Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D E F G H J K L M N MIN 14.42 9,63
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MJE2955T,
MJE3055T
MJE2955T
MJE3055T
MJE30*T
transistor MJE3055T
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bss65
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — BSS65 Q_ BSS65 - L1 B SS 65R - L5 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -12 V Collector-E m itter Voltage
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BSS65
BSS65
-10mA,
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Untitled
Abstract: No abstract text available
Text: TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The TIP33C is a silicon Epitaxial-Base NPN power transistor mounted in TO-218 plastic
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TIP33C
TIP34C
TIP33C
O-218
TIP34C.
/TIP34C
O-218
OT-93)
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2sb753
Abstract: No abstract text available
Text: TO SH IBA 2SB753 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm High Collector Current : 10 = —7A Low Collector Saturation Voltage
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2SB753
2SD843.
--100V,
2sb753
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Untitled
Abstract: No abstract text available
Text: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching
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TIP2955
TIP3055
TIP3055
O-218
TIP2955.
P2955/TIP3055
O-218
OT-93)
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se5020
Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
Text: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES
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2SA1464
2SC3739
se5020
marking R1L
mot-10
2SA1464
2SC3739
2SC373
MECM
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