2N6111
Abstract: No abstract text available
Text: 2N6111 SILICON PNP SWITCHING TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is
|
Original
|
PDF
|
2N6111
2N6111
O-220
O-220
P011CI
|
Untitled
Abstract: No abstract text available
Text: 2N6111 SILICON PNP SWITCHING TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is
|
Original
|
PDF
|
2N6111
2N6111
O-220
O-220
|
2N6111
Abstract: No abstract text available
Text: 2N6111 SILICON PNP SWITCHING TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is
|
Original
|
PDF
|
2N6111
2N6111
O-220
O-220
|
HIGH VOLTAGE PNP POWER TRANSISTOR
Abstract: MJE5852 l5 transistor PNP
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching
|
Original
|
PDF
|
MJE5852
MJE5852
O-220
HIGH VOLTAGE PNP POWER TRANSISTOR
l5 transistor PNP
|
MJE5852
Abstract: No abstract text available
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: ■ SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching
|
Original
|
PDF
|
MJE5852
MJE5852
O-220
|
MJE5852
Abstract: No abstract text available
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using High
|
Original
|
PDF
|
MJE5852
MJE5852
O-220
|
MJE5852
Abstract: No abstract text available
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY • ■ ■ APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ 3 1 DESCRIPTION The MJE5852 is manufactured using High
|
Original
|
PDF
|
MJE5852
MJE5852
O-220
|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Central CMLT591E SURFACE MOUNT PICOminiTM PNP SILICON TRANSISTOR CC CC TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VCE Sat 1.0 Amp transistor, epoxy molded in a space saving PICOmini SOT-563 surface mount package and designed
|
Original
|
PDF
|
CMLT591E
OT-563
500mA,
100mA
500mA
100MHz
13-November
|
CMLT591E
Abstract: common collector PNP
Text: CMLT591E SURFACE MOUNT PICOminiTM PNP SILICON TRANSISTOR CC CC E B Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VCE Sat 1.0 Amp transistor, epoxy molded in a space saving PICOmini SOT-563 surface mount package and designed
|
Original
|
PDF
|
CMLT591E
OT-563
100mA
500mA
100MHz
CMLT591E
common collector PNP
|
Untitled
Abstract: No abstract text available
Text: CMLT591E SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VCE Sat 1.0 Amp transistor, epoxy molded in a space saving PICOmini CC CC E B SOT-563 CASE SOT-563 surface mount package and designed
|
Original
|
PDF
|
CMLT591E
OT-563
500mA,
100mA
500mA
100MHz
20-September
|
ZXT953K
Abstract: ZXT953KTC of ZXT953KTC
Text: ZXT953K 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high performance 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits
|
Original
|
PDF
|
ZXT953K
-100V
ZXT953KTC
ZXT953K
ZXT953KTC
of ZXT953KTC
|
ZXT951K
Abstract: ZXT951KTC ZXT951 Bv 42 transistor
Text: ZXT951K 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -60V : RSAT = 53m typical; IC = -6A DESCRIPTION Packaged in the D-PAK outline this high current high performance 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits
|
Original
|
PDF
|
ZXT951K
ZXT951KTC
ZXT951K
ZXT951KTC
ZXT951
Bv 42 transistor
|
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
|
Original
|
PDF
|
KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
|
|
|
2N6668
Abstract: No abstract text available
Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1
|
Original
|
PDF
|
2N6668
O-220
2N6668
|
2N6668
Abstract: No abstract text available
Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER 1 2
|
Original
|
PDF
|
2N6668
O-220
2N6668
|
transistor BS 170
Abstract: 2N6668 2n666
Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1
|
Original
|
PDF
|
2N6668
O-220
transistor BS 170
2N6668
2n666
|
MSA035
Abstract: BFQ246 MSB002
Text: Philips Semiconductors Preliminary specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.
|
OCR Scan
|
PDF
|
OT223
7110fl2b
BFQ246
MSA035â
OT223.
711005t.
MSA035
BFQ246
MSB002
|
MPS-L51
Abstract: transistor BF 2030
Text: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage
|
OCR Scan
|
PDF
|
MPS-L51
MPS-L51
transistor BF 2030
|
Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR . HIGH VOLTAGE CAPABILITY APPLICATIONS: . SWITCHING REGULATORS . MOTOR CONTROL . INVERTERS DESCRIPTION The MJE5852 is manufactured using high voltage
|
OCR Scan
|
PDF
|
MJE5852
MJE5852
|
Untitled
Abstract: No abstract text available
Text: Central" CMLT591E Semiconductor Corp. SURFACE MOUNT PICOmini PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VQ ^gat 1.0 Amp transistor, epoxy molded in a space saving PICOmini™ SOT-563 surface mount package and designed
|
OCR Scan
|
PDF
|
CMLT591E
OT-563
CP705
OT-563
|
marking code vc sot
Abstract: sot marking code LB
Text: Central" CMLT591E Semiconductor Corp. SURFACE MOUNT PICOmini PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low V Q ^ g a j 1.0 Amp transistor, epoxy molded in a space saving PICOmini™ SOT-563 surface mount package and designed
|
OCR Scan
|
PDF
|
CMLT591E
OT-563
CP705,
13-November
OT-563
marking code vc sot
sot marking code LB
|
Y2923
Abstract: 2sc 965 transistor b0961 Q62702-S154 lfe10
Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4033 is an epitaxial PNP silicon planar transistor in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistor is particularly intended for
|
OCR Scan
|
PDF
|
023SbOS
Q62702-S154
fl235b05
Y2923
2sc 965 transistor
b0961
Q62702-S154
lfe10
|
J200M
Abstract: No abstract text available
Text: h 7 'y UMC4N FMC4A • UM C4N/FM C4A 2 /Transistors /Dual Mini-Mold Transistor NPN/PNP v 'J3> Epitaxal Planar NPN/PNP Silicon Transistor Z -4 "J f - > ? Ulfe/Switching Circuit 1W f * \r ; ä E l /Dimensions Unit : mm « Ä 1) UMT (SC-70), SMT (SC-59) t |h] -
|
OCR Scan
|
PDF
|
SC-70)
SC-59)
J200M
|
