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    TRANSISTOR PNP BC328 Search Results

    TRANSISTOR PNP BC328 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP BC328 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2000. 2. 28 Revision No : 2 1/2


    Original     		PDF BC328

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


    Original     		PDF BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=-800mA. ・DC Current Gain : hFE=100～630 VCE=-1V, Ic=-100mA . ・For Complementary with NPN type BC338.


    Original     		PDF -800mA. -100mA) BC338. BC328 -100mA -500mA, -50mA -300mA -10mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.BASE Symbol 3. EMITTER Parameter Value


    Original     		PDF BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA

    BC328

    Abstract: BC338 transistor bc328
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC328.


    Original     		PDF BC338 800mA. 100mA) BC328. BC328 BC338 transistor bc328

    BC328

    Abstract: BC338 BC338N
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC338.


    Original     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338 BC338N

    BC327

    Abstract: BC328 transistor BC328
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value


    Original     		PDF BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA BC327 BC328 transistor BC328

    IC 630

    Abstract: BC328
    Text: DC COMPONENTS CO., LTD. BC328 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter


    Original     		PDF BC328 -500mA, -50mA -300mA, -100mA, -10mA, 100MHz IC 630 BC328

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation PCM: TO-92 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current -0.8 A ICM: Collector-base voltage BC327 -50 V


    Original     		PDF BC327/ BC328 BC327 BC328 BC327 breakd-45V, -100mA -300mA

    BC327

    Abstract: BC328 BC327 equivalent transistor BC328 BC327 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value VCBO Collector-Base Voltage


    Original     		PDF BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA BC327 BC328 BC327 equivalent transistor BC328 BC327 transistor

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=800mA. ・DC Current Gain : hFE=100～630 VCE=1V, Ic=100mA . ・For Complementary with PNP type BC328. MAXIMUM RATING (Ta=25℃)


    Original     		PDF 800mA. 100mA) BC328. BC338 100mA 500mA, 300mA -10mA, 100MHz

    BC327

    Abstract: BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25
    Text: BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 2Base 3Emitter J CLASSIFICATION OF hFE 1 A Product-Rank BC327-16


    Original     		PDF BC327 BC328 BC327-16 BC327-25 BC328-16 BC328-25 BC328-40 BC327-40 -10mA, -100mA BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25

    BC328

    Abstract: BC338 2BC338
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G


    Original     		PDF BC338 800mA. 100mA) BC328. 00TER 100mA 500mA, 300mA -10mA, 100MHz BC328 BC338 2BC338

    transistor BC327

    Abstract: BC327 BC328 BC327 equivalent BC327 PNP transistor download datasheet transistor BC328 WEJ BC327
    Text: BC327/BC328 BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation PCM: 0.625 TO-92 W (Tamb=25℃) Collector current ICM: -0.8 A Collector-base voltage BC327 -50 V VCBO: BC328 -30 V Operating and storage junction temperature range 1. COLLECTOR 2. BASE 1 2 3


    Original     		PDF BC327/BC328 BC327/ BC328 BC327 BC328 BC327 -100mA transistor BC327 BC327 equivalent BC327 PNP transistor download datasheet transistor BC328 WEJ BC327

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC337/338 1 TO-92  ORDERING INFORMATION Ordering Number


    Original     		PDF BC327/328 BC337/338 BC327L-xx-T92-B BC327G-xx-T92-B BC327L-xx-T92-K BC327G-xx-T92-K BC328L-xx-T92-B BC328G-xx-T92-B BC328L-xx-T92-K BC328G-xx-T92-K

    transistor

    Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
    Text: Alphanumerical List of Types TVpe Page 2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 Small-Signal Transistor NPN Small-Signal Transistor (PNP) Small-Signal Transistor (NPN) Small-Signal Transistor (PNP) DMOS Transistor (N-Channel) DMOS Transistor (N-Channel)


    OCR Scan     		PDF 2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 BC327 BC328 BC337 BC338 transistor transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A

    BC328

    Abstract: BC338
    Text: SEMICONDUCTOR TECHNICAL DATA BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC338.


    OCR Scan     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338

    TRANSISTOR BC338

    Abstract: BC328 BC338
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC328.


    OCR Scan     		PDF BC338 800mA. 100mA) BC328. TRANSISTOR BC338 BC328 BC338

    BC328

    Abstract: BC338
    Text: SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC328. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF BC338 800mA. 100mA) BC328. BC328 BC338

    BC328

    Abstract: BC338
    Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC338.


    OCR Scan     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338

    transistor c327 25

    Abstract: BC327 C327
    Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337IBC338 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector Emitter Voltage


    OCR Scan     		PDF BC327/328 BC337IBC338 BC327 BC328 GG25057 transistor c327 25 BC327 C327