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    TRANSISTOR PNP 12V 1A COLLECTOR CURRENT Search Results

    TRANSISTOR PNP 12V 1A COLLECTOR CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP 12V 1A COLLECTOR CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DFN3020B-8

    Abstract: diodes transistor marking k2 dual
    Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A


    Original     		PDF ZXTPS717MC -140mV 500mV DFN3020B-8 DS31936 DFN3020B-8 diodes transistor marking k2 dual

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A


    Original     		PDF ZXTPS717MC -140mV 500mV DFN3020B-8 DS31936

    IC 630

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		PDF ZXTC6717MC 100mV -140mV DS31926 IC 630

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		PDF ZXTC6717MC 100mV -140mV DS31926

    Untitled

    Abstract: No abstract text available
    Text: ZUMT717 12V PNP POWER SWITCHING TRANSISTOR IN SOT323 Features Mechanical Data • • • • • BVCEO > -12V IC = -1.25A Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage VCE sat < -215mV @ IC = -1A RCE(SAT) = 150mΩ for a Low Equivalent On-Resistance


    Original     		PDF ZUMT717 OT323 -215mV J-STD-020 500mW ZUMT617 DS33339

    DFN2020B-3

    Abstract: ZXTP717MA ZXTP717MATA sot23 transistor marking y2
    Text: A Product Line of Diodes Incorporated ZXTP717MA 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -4A Continuous Collector Current Low Saturation Voltage -140mV max @ -1A


    Original     		PDF ZXTP717MA -140mV AEC-Q101 DFN2020B-3 DS31881 DFN2020B-3 ZXTP717MA ZXTP717MATA sot23 transistor marking y2

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP717MA 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -4A Continuous Collector Current Low Saturation Voltage -140mV max @ -1A


    Original     		PDF ZXTP717MA -140mV AEC-Q101 DFN2020B-3 DS31881

    IC 630

    Abstract: marking DA1
    Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance


    Original     		PDF ZXTC6717MC 100mV -140mV DS31926 IC 630 marking DA1

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


    Original     		PDF ZXTD6717E6 100mV -140mV AEC-Q10knowledge DS33653

    LTC1172

    Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
    Text: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents


    Original     		PDF FMMT718 OT223 FMMT618/718 FMMT618 FMMT619 BCP56 FMMT619s, LTC1172 CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 push pull converter 70V motor controller IRF830 inverter irf840

    12W Sot23

    Abstract: ZTX796A transistor pnp 12v 1a fzt90a ZTX90A voltage regulator sot23-6 1.5A 8 pin ic used in laptop transistor Comparison Tables laptop power regulator ic buck converter SOT23-6
    Text: Application Note 26 Fast charging batteries with Zetex high current PNP transistors and benchmarq controller ICs Neil Chadderton Introduction Fast charge controller ICs The advances of digital technology and a waiting market have created a huge demand for portable products including cellular


    Original     		PDF

    transistor Comparison Tables

    Abstract: ZTX950 ZTX796A ZTX951 Zetex 12W Sot23 zetex fzt788b ZETEX ZBD949 fzt788b 1N4148 1N5820
    Text: Application Note 26 Issue 1 April 1996 Fast Charging Batteries with Zetex High Current PNP Transistors and Benchmarq Controller ICs Neil Chadderton Introduction Fast Charge Controller ICs The advances of digital technology and a waiting market have created a huge


    Original     		PDF ZTX949 320mV A/300mA ZTX951 300mV A/400mA ZTX788B ZTX976A, ZTX950 OT223 transistor Comparison Tables ZTX796A ZTX951 Zetex 12W Sot23 zetex fzt788b ZETEX ZBD949 fzt788b 1N4148 1N5820

    2SA1488

    Abstract: 2SA1488A 2SC3851A transistor pnp 12v 1a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1488A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851A APPLICATIONS ·Designed for audio and general purpose applications.


    Original     		PDF 2SA1488A 2SC3851A -25mA; 2SA1488 2SA1488A 2SC3851A transistor pnp 12v 1a

    2SC3851

    Abstract: transistor pnp VCEO 12V Ic 1A 2SA1488 transistor pnp 12v 1a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1488 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851 APPLICATIONS ·Designed for audio and general purpose applications.


    Original     		PDF 2SA1488 2SC3851 -25mA; 2SC3851 transistor pnp VCEO 12V Ic 1A 2SA1488 transistor pnp 12v 1a

    2SB1382

    Abstract: transistor 12v 8A 2SD2082 pnp darlington VCE 120V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)


    Original     		PDF -120V -16mA) 2SD2082 -16mA -120V -16mA, 2SB1382 transistor 12v 8A 2SD2082 pnp darlington VCE 120V

    2sb1383

    Abstract: 2sd2083 transistor IC 12A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083


    Original     		PDF -120V 2SD2083 -24mA -120V, -24mA; 2sb1383 2sd2083 transistor IC 12A

    2SC4381

    Abstract: 2SA1667 driver transistor hfe 60
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4381 APPLICATIONS


    Original     		PDF 2SA1667 -150V 2SC4381 -25mA -150V 2SC4381 2SA1667 driver transistor hfe 60

    2sd2083

    Abstract: 2SB1383 transistor 2sd2083 2sb1383 equivalent equivalent 2sb1383 transistor IC 12A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083


    Original     		PDF -120V 2SD2083 -24mA -120V, -24mA; 2sd2083 2SB1383 transistor 2sd2083 2sb1383 equivalent equivalent 2sb1383 transistor IC 12A

    2SD2389 power transistor

    Abstract: 2SD2389 audio Darlington 6A 2SB1559 transistor 2SB1559
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2389 APPLICATIONS


    Original     		PDF 2SD2389 -160V; 2SD2389 power transistor 2SD2389 audio Darlington 6A 2SB1559 transistor 2SB1559

    2SA1667

    Abstract: 2SC4381
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4381 APPLICATIONS


    Original     		PDF 2SA1667 -150V 2SC4381 -25mA -150V 2SA1667 2SC4381

    2SA1668

    Abstract: 2SC4382 transistor 2SA1668 2sa1668 transistor pnp 200v 2sa166
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1668 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4382 APPLICATIONS


    Original     		PDF 2SA1668 -200V 2SC4382 -25mA -200V 2SA1668 2SC4382 transistor 2SA1668 2sa1668 transistor pnp 200v 2sa166

    Untitled

    Abstract: No abstract text available
    Text: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA699A Silicon PNP Power Transistor DESCRIPTION • High Collector Current -lc= -2A • Collector-Emitter Breakdown Voltage: V(BR)CEO= -40V(Min)


    Original     		PDF 2SA699A 2SC1226A O-220C

    p04 sot223

    Abstract: marking P04 P04 transistor DN200P DP200P
    Text: DP200P Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.3V Typ. @IC /IB =-1A/-50mA) • Suitable for low voltage large current drivers • Excellent hFE linearity • Complementary pair with DN200P


    Original     		PDF DP200P -1A/-50mA) DN200P OT-223 KST-7001-000 -100mA -50mA p04 sot223 marking P04 P04 transistor DN200P DP200P

    ZVN4306A TO-5

    Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
    Text: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage


    Original     		PDF 100mA/div. 50ns/div. x15mm FMMT618/718 700mW. 500mA/div. 100ns/div. ZVN4306A TO-5 ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v