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    TRANSISTOR PC 817 Search Results

    TRANSISTOR PC 817 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PC 817 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Liteon PC817

    Abstract: cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo
    Text: PHOTO COUPLER CROSS REFERENCE Transistor Output - DC Input KODENSHI SHARP PC-17T1 PC-17T2 PC-17T4 FAIRCHILD VISHAY NEC LITEON COSMO H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 PS2571-1 LTV-816 LTV-817 -V LTV-819-1 LTV123 LTV-610 K1010 PS2501-2


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    PC-17T1 PC-17T2 PC-17T4 H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 Liteon PC817 cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo PDF

    2SC5053

    Abstract: AL MARKING AL MARKING CODE 2SA1900 T100
    Text: 2SA1900 Transistors Medium power transistor −50V, −1A 2SA1900 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.15V at IC / IB = −500mA/ −50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SC5053


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    2SA1900 -500mA/ -50mA 2SC5053 2SC5053 AL MARKING AL MARKING CODE 2SA1900 T100 PDF

    2SC5053

    Abstract: 2SA1900 T100
    Text: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 (1)Base


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    2SC5053 500mA/ 2SA1900 2SC5053 2SA1900 T100 PDF

    2SC5053

    Abstract: 2SA1900 T100
    Text: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 1.5 2.5


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    2SC5053 500mA/ 2SA1900 2SC5053 2SA1900 T100 PDF

    MCH218CN106K

    Abstract: No abstract text available
    Text: TECHNICAL NOTE High-performance Regulator IC Series for PCs Ultra Low Dropout Linear Regulators for PC Chipsets BD3508EKN ● Description The BD3508EKN ultra low-dropout linear chipset regulator operates from a very low input supply, and offers ideal performance in low input voltage to low output voltage applications. It incorporates a built-in N-MOSFET power transistor to


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    BD3508EKN BD3508EKN MCH218CN106K PDF

    k 513

    Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
    Text: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


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    AN179 BFP620 BFP640F AN182 k 513 MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179 PDF

    Tenma

    Abstract: pnp transistor 1000v philips AA Alkaline battery dimensions
    Text: Model 72-8170 Analog Volt/Ohm Meter INSTRUCTION MANUAL Tenma Test Equipment www.tenma.com Controls and Functions 1 Zero calibration adjustment (2) Range selector (3) 10A input terminal (4) (+) probe input (5) (–) probe input (6) Transistor input terminals


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    300mA 20K/volt Tenma pnp transistor 1000v philips AA Alkaline battery dimensions PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC 817-16LT1 BC817-25LT1 SOT-23 BC817-40LT1 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


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    OT-23 817-16LT1 BC817-25LT1 OT-23 BC817-40LT1 100mA 500mA 500mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors BC 817-16LT1 BC817-25LT1 SOT-23 BC817-40LT1 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO


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    OT-23 817-16LT1 BC817-25LT1 OT-23 BC817-40LT1 100mA 500mA 500mA, PDF

    transistor C 2240

    Abstract: transistor mw 131 2.4 ghZ rf transistor transistor cross reference chart RF TRANSISTOR BFP650F transistor 20 dB 2400 mhz low power rf transistor T INFINEON schematic diagram amplifier TRANSISTOR 12 GHZ
    Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 3 I n f i n e on ’ s B F P 6 5 0 F R F T r a n s i s t or i n H i g h L i n e a r i t y 2 . 4 G H z L o w N o i s e A m p l i fi e r L N A Application R F & P r o t e c ti o n D e v i c e s


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    BFP650F transistor C 2240 transistor mw 131 2.4 ghZ rf transistor transistor cross reference chart RF TRANSISTOR transistor 20 dB 2400 mhz low power rf transistor T INFINEON schematic diagram amplifier TRANSISTOR 12 GHZ PDF

    ultra low noise transistor

    Abstract: amplifier TRANSISTOR 12 GHZ transistor cross reference chart BFR740L3 transistor cross reference transistor amplifier 3 ghz C 114 transistor SiGe Infineon
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 4 I n v e s t i ga t i o n o f B F R 7 4 0 L 3 U l tr a L ow N oi s e S i G e :C T r a n s i s t o r a s 1. 7 - 2 . 3 G H z " i B U R S T " L ow Noise Amplifier


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    BFR740L3 ultra low noise transistor amplifier TRANSISTOR 12 GHZ transistor cross reference chart transistor cross reference transistor amplifier 3 ghz C 114 transistor SiGe Infineon PDF

    transistor cross reference chart

    Abstract: BFP405F to4 88 TO4 45
    Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 4 8 B F P 4 05 F R F T r a n s i s t or a s L o w C o s t , L o w C u r r e n t 2.5 mA 3 to4 GHz UWB Tx Amplifier with 2.2 3.6 V Operation R F & P r o t e c ti o n D e v i c e s


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    BFP405F transistor cross reference chart to4 88 TO4 45 PDF

    transistor t 2190

    Abstract: 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 6 B F R 7 4 0 L 3 U l tr a Lo w N o i s e S i G e : C R F T r an s i s t o r a s 2 1 1 0 - 21 7 0 M H z U M T S L o w N o i s e A m p l i fi e r R F & P r o t e c ti o n D e v i c e s


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    BFR740L3 transistor t 2190 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP PDF

    bfp640f

    Abstract: Transistor cross
    Text: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 2 8 R e d u c e d P ar t s C o u n t L N A f o r 1 .4 - 2 .0 G H z u s i n g t h e S i G e T r a n s i s to r B F P 6 4 0 F R F & P r o t e c ti o n D e v i c e s


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    PDF

    bfp640f

    Abstract: transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ
    Text: Application Note, Rev. 1.2, Oktober 2007 Application Note No. 126 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier LNA , with reduced external component count and reduced gain at 2.4 GHz RF & Protection Devices Edition 2007-10-17


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    BFP640F transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ PDF

    BFP740F

    Abstract: SMC-02 amplifier TRANSISTOR 12 GHZ transistor cross reference chart FSEM30
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 8 BFP740F Ultra-Low Noise Silicon-Germanium T r a n s i s t o r a s 5 - 6 G H z L o w N o i s e A m p l i f i er L N A R F & P r o t e c ti o n D e v i c e s


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    BFP740F SMC-02 amplifier TRANSISTOR 12 GHZ transistor cross reference chart FSEM30 PDF

    ultra low noise RF Transistor

    Abstract: BFR740F BFP740F sdars application note no. 122 sdars lna amplifier TRANSISTOR 12 GHZ Low Noise R.F 11 A 122 transistor infineon b 58 468
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 2 I n f i n e on ’ s B F P 7 4 0 F U l tr a L ow N o i s e R F T r a n s i s t o r i n 2 . 33 G H z S D A R S L o w N o i s e Amplifier Application R F & P r o t e c ti o n D e v i c e s


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    BFP740F ultra low noise RF Transistor BFR740F sdars application note no. 122 sdars lna amplifier TRANSISTOR 12 GHZ Low Noise R.F 11 A 122 transistor infineon b 58 468 PDF

    BFP640

    Abstract: gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 1 L o w N o i s e A m p l i f i e r f o r G P S A p p l i c at i o n s u s i ng B FP 6 40 S i G e T ra n s i s t o r R F & P r o t e c ti o n D e v i c e s


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    BFP640 gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR PDF

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


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    I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector PDF

    Untitled

    Abstract: No abstract text available
    Text: 5YMSEMI SEMICONDUCTOR BC8 17-16LT1 SOT -23 Plastic Encapsulate Transistors TRANSISTOR NPN BC8 17-25LT1 BC8 17-40LT1 FEATURES Power dissipation Pc« : 0.3 W (Tamb=25 °C) Collector current Icm : 05 Collector base voltage A V cbo : 50 V Operating and storage junction temperature range


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    17-16LT1 17-25LT1 17-40LT1 OT-23 950TPY 550REF 037TPY 022REF PDF

    transistor KTA 949

    Abstract: KTC2229 2SC 2229 transistor KTN5013 2238B transistor B 1184 transistor HFE 400 1w to 92 TO92C
    Text: 2 DRIVER TRANSISTOR USE TYPE v CEO V * PC (mA) (mW) ELECTRICAL CHARACTERISTICS (Ta = 25C) T. Co ICBO (uA) «AX *E VCB (V) (mA) hFE VCE (sat) VCE (V) k: (mA) (V) *C (mA) (MHz) TYP (MIN) VCE k (V) (mA) -10 4.0 -10 I TO-92L fT MAX *B (mA) Cob. (pF) TYP (MAX)


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    949/KTP O-92L 2229/KTN 1015/KTP5514 1815/KTN O-126 O-220 transistor KTA 949 KTC2229 2SC 2229 transistor KTN5013 2238B transistor B 1184 transistor HFE 400 1w to 92 TO92C PDF

    C5 MARKING TRANSISTOR

    Abstract: BC807 BC808 marking code 9FB marking 9fb 9fb transistor
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to B C 817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollecto r E m itter Voltage


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    BC807/BC808 BC817/BC818 BC807 BC808 OT-23 -10mA, C5 MARKING TRANSISTOR BC808 marking code 9FB marking 9fb 9fb transistor PDF

    B817

    Abstract: B 817 K*1047
    Text: KSD1047 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High P ow er D issipation • C om plem ent to K S B 817 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic


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    KSD1047 B817 B 817 K*1047 PDF

    ic 817A

    Abstract: transistor 817a 1627a 817a Ic 817A kec kta 817a y KTA817A
    Text: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS ( KTA 817A A PPLICA TIO N S ) • Driver Stage Amplifier Applications. ■ Voltage Amplifier Applications. c FEATU RES J > • C o m p l e m e n t a r y to K T C 1 6 2 7 A. • Driver S t a g e A p p l i c a t i o n of 30 to 35 W a t t s A m p l i f i e r s


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    75MAX. 80MAX. 60MAX. 92MOD -10mA ic 817A transistor 817a 1627a 817a Ic 817A kec kta 817a y KTA817A PDF