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    TRANSISTOR PARA RF Search Results

    TRANSISTOR PARA RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PARA RF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mitsubishi AL-10MR-D user manual

    Abstract: mitsubishi AL-10MR-A user manual mitsubishi AL-20MR-D user manual Mitsubishi Logic Controller AL-6MR-A AL-10MR-D mitsubishi AL-20MR-A user manual ,mitsubishi AL-10MR-A user manual AL-6MR-A program manual AL-20MR-A mitsubishi AL-10MR-D software manual
    Text: ENG GER FRE ITL ESP HARDWARE MANUAL α SIMPLE APPLICATION CONTROLLER α Simple Application Controller ENG Foreword • This manual contains text, diagrams and explanations which will guide the reader in the correct installation, safe use and operation of the α Series and should be read and understood before attempting to install or


    Original     		J24532 JY992D74201H mitsubishi AL-10MR-D user manual mitsubishi AL-10MR-A user manual mitsubishi AL-20MR-D user manual Mitsubishi Logic Controller AL-6MR-A AL-10MR-D mitsubishi AL-20MR-A user manual ,mitsubishi AL-10MR-A user manual AL-6MR-A program manual AL-20MR-A mitsubishi AL-10MR-D software manual PDF

    atc600s

    Abstract: CRF35010-101 CRF-35010 AVX1206
    Text: CRF-35010-101 10 W, 3400-3800 MHz, SiC RF Power MESFET PRELIMINARY Features • • • • • • • • • Package Type 440101 Application 3.4 - 3.8 GHz Operation 10 dB Small Signal Gain -40 dBc OFDM at 1.5 W 17% Drain Efficiency at 1.5 W 10 W P1dB Internally Matched


    Original     		CRF-35010-101 CRF35010-101 CRF-35010 atc600s CRF35010-101 AVX1206 PDF

    ATC600S

    Abstract: AVX0805 AVX1206 CRF35010
    Text: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has


    Original     		CRF35010F CRF35010 CRF350 CRF35010F ATC600S AVX0805 AVX1206 PDF

    Microwave PIN diode

    Abstract: 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation
    Text: HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: family given in bracketts • CGY40: (CGY41), Side 2 • CFY66: (CFY67), Side 3 • BXY42: (BXY43, BXY44), Side 4 - 5 • BFY193: (BFY180, BFY280,


    Original     		CGY40: CGY41) CFY66: CFY67) BXY42: BXY43, BXY44) BFY193: BFY180, BFY280, Microwave PIN diode 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation PDF

    antena microondas

    Abstract: circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS
    Text: 4 Siemens AG 2014 Medida de nivel 4/2 Sinopsis de productos 4/9 Detección de nivel Sensores capacitivos Medición continua continuación Accesorios para sistemas ultrasónicos 4/185 – Bridas de fijación EA 4/187 – Soportes de montaje FMS 4/189 – Sensor de temperatura TS-3


    Original     		LR200 CLS300 LR250 7ML1830-1HA 7ML1830-1MC 7ML1830-1MM antena microondas circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS PDF

    display led 4 digitos

    Abstract: transformador corriente de 110 a 24 volts 4011A manual de reemplazo de electronica 2005,BK transformador electrico 24v ultrasonic generator for 5mhz signal transformador de pulsos fuente de voltaje
    Text: INSTRUCTION MANUAL MANUAL DE INSTRUCCIONES MODEL 4011A MODELO 4011A 5 MHz FUNCTION GENERATOR with DIGITAL DISPLAY 5MHz GENERADOR DE FUNCIONES CON DIGITOS INDICADOR 1 TEST INSTRUMENT SAFETY WARNING Normal use of test equipment exposes you to a certain amount of danger from electrical shock because testing must sometimes be


    Original     		73/23/EEC 93/68/EEC 89/336/EEC 92/68/EEC display led 4 digitos transformador corriente de 110 a 24 volts 4011A manual de reemplazo de electronica 2005,BK transformador electrico 24v ultrasonic generator for 5mhz signal transformador de pulsos fuente de voltaje PDF

    bl p76 transistor

    Abstract: bl p76 led clock circuit diagram led using clock circuit diagram with TRANSISTOR BH 4216 ic rom 2816 TD 6316 transistor bl p75 M37735MHBXXXFP
    Text: MITSUBISHI MICROCOMPUTERS RY A N IMI M37735MHBXXXFP ge. ion. icat to chan ecif l sp ubject a in af es not mits ar li is is : Th metric e ic Not e para Som REL P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Serial I/O UART or clock synchronous . 3


    Original     		M37735MHBXXXFP 16-BIT q10-bit q12-bit M37735MHBXXXFP 00087F16 FFFFFF16 00007F16 bl p76 transistor bl p76 led clock circuit diagram led using clock circuit diagram with TRANSISTOR BH 4216 ic rom 2816 TD 6316 transistor bl p75 PDF

    M37735MHBXXXFP

    Abstract: ge 5216 transistor F5123
    Text: MITSUBISHI MICROCOMPUTERS RY A N IMI M37735MHBXXXFP ge. ion. icat to chan ecif l sp ubject a in af es not mits ar li is is : Th metric e ic Not e para Som REL P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Serial I/O UART or clock synchronous . 3


    Original     		M37735MHBXXXFP 16-BIT q10-bit q12-bit M37735MHBXXXFP H-LF425-A KI-9606 ge 5216 transistor F5123 PDF

    bl p76 transistor

    Abstract: 3E16 TRANSISTOR BH 4216 M37735MHBXXXFP oscillator MARKING CODE 200
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		00087F16 FFFFFF16 00007F16 000FFF16 00FFFF16 00C00016 bl p76 transistor 3E16 TRANSISTOR BH 4216 M37735MHBXXXFP oscillator MARKING CODE 200 PDF

    Untitled

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		01FFFF16 FFFFFF16 00007F16 00087F16 00FFFF16 PDF

    bl p76 transistor

    Abstract: P210A M37735MHBXXXFP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		00087F16 FFFFFF16 00007F16 000FFF16 00FFFF16 00C00016 bl p76 transistor P210A M37735MHBXXXFP PDF

    transistor bl p87

    Abstract: lf422 bl p76 transistor TRANSISTOR BH 4216 M37733MHBXXXFP transistor bl p44
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		00007F16 00087F16 FFFFFF16 000FFF16 00FFFF16 00C00016 transistor bl p87 lf422 bl p76 transistor TRANSISTOR BH 4216 M37733MHBXXXFP transistor bl p44 PDF

    lf422

    Abstract: M37733MHBXXXFP TRANSISTOR BH p75
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		00007F16 00087F16 FFFFFF16 000FFF16 00FFFF16 00C00016 lf422 M37733MHBXXXFP TRANSISTOR BH p75 PDF

    lf422

    Abstract: TRANSISTOR BH 4216 M37733MHBXXXFP transistor bl p75 CM-501
    Text: IM REL IN MITSUBISHI MICROCOMPUTERS Y AR M37733MHBXXXFP . . tion hange c ifica pec ject to s l fina sub ot a its are is n m This etric li : e m ic Not e para Som P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Serial I/O UART or clock synchronous . 3


    Original     		M37733MHBXXXFP 16-BIT q10-bit q12-bit M37733MHBXXXFP 00007F16 00087F16 FFFFFF16 lf422 TRANSISTOR BH 4216 transistor bl p75 CM-501 PDF

    caracteristicas transformador de 24v

    Abstract: osciloscopio Frequency Generator 0.1Hz 10MHz generador de pulsos circuitos de amplificadores de audio transformador de pulsos 4017A COMPUERTA TTL AND generador de alta frecuencia 22820 transistor
    Text: INSTRUCTION MANUAL MODEL 4017A MANUAL DE INSTRUCCIONES MODELO 4017A 10 MHz SWEEP FUNCTION GENERATOR with DIGITAL DISPLAY 10MHz GENERADOR DE BARRIDO/FUNCIONES CON EXHIBICION DIGITAL TEST INSTRUMENT SAFETY WARNING Normal use of test equipment exposes you to a certain amount of danger from electrical shock because testing must sometimes be


    Original     		10MHz l4040A, 73/23/EEC 93/68/EEC 89/336/EEC 92/68/EEC caracteristicas transformador de 24v osciloscopio Frequency Generator 0.1Hz 10MHz generador de pulsos circuitos de amplificadores de audio transformador de pulsos 4017A COMPUERTA TTL AND generador de alta frecuencia 22820 transistor PDF

    CM-501

    Abstract: CM501 "7700 Family" Mitsubishi M37733MHBXXXFP TRANSISTOR BH p75
    Text: IM REL IN MITSUBISHI MICROCOMPUTERS Y AR M37733MHBXXXFP . . tion hange c ifica pec ject to s l fina sub ot a its are is n m This etric li : e m ic Not e para Som P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Serial I/O UART or clock synchronous . 3


    Original     		M37733MHBXXXFP 16-BIT q10-bit q12-bit M37733MHBXXXFP H-LF422-A KI-9605 CM-501 CM501 "7700 Family" Mitsubishi TRANSISTOR BH p75 PDF

    transistor potencia

    Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
    Text: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP


    OCR Scan     		fl531BÃ BC546 BC547 BC548 BC549 BC556 BC557 PA6015 PB6015 PA6025 transistor potencia t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494 PDF

    transistores

    Abstract: AMPLIFICADOR PE210 PE108 oscilador amplificador de 400 w amplificador de RF PE109 amplificadores de audio amplificador transistor audio
    Text: 50E D • ñ2315ím GODOODS T ■ T-2-cL-2A -SID MICROELETRÔNICA S/A Tipo Pol. Emcaps. Term 321 PC107 PNP T092 EBC PC108 PNP T092 EBC PC109 PE107 PE108 PE109 PE155 PE210 PE254 PE255 PE422 PE423 BD135 PNP NPN NPN


    OCR Scan     		02312flM PC107 PC108 PC109 PE108 PE109 T0126 BD138 transistores AMPLIFICADOR PE210 oscilador amplificador de 400 w amplificador de RF amplificadores de audio amplificador transistor audio PDF

    TERMOPAR tipo k

    Abstract: DVP-10SX DVP16SP11R DVP16SM11N DVP16SP11T DVP-08SN DVP-40EH DVP-14SS DVP-32EH DVP14SS11R2
    Text: DELTA ELECTRONICS, INC. www.d*l a.cem.iwiInduttrtil«ut«imalloii IABU Headquarter» Da Ita E lectron ics, Inc. Taoyuanl 31-1, Xlngbang Road, Gulshan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Asia Delta E lectron ics (Jiang Su Ltd.


    OCR Scan     		238Mln-Xla Buildin2000, 2000/XP) DRP024V060W1AZ DRP024V060W1AA DRP024V120W1AA DRP024V240W1AA DRP024V480W1AA DRP024V060W3 320-575VAC/ TERMOPAR tipo k DVP-10SX DVP16SP11R DVP16SM11N DVP16SP11T DVP-08SN DVP-40EH DVP-14SS DVP-32EH DVP14SS11R2 PDF

    2SC730

    Abstract: transistor 2SC730 transistor CD 910 1p TRANSISTOR u3020
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on V H F band mobile radio applications. Dim ensions in mm


    OCR Scan     		2SC730 2SC730 150MHz transistor 2SC730 transistor CD 910 1p TRANSISTOR u3020 PDF

    BUK441

    Abstract: BUK441-60A BUK441-60B 3909
    Text: T Ï2 & - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.


    OCR Scan     		PINNING-SOT186 BUK441-60A/B 711D0Eb BUK441 711002b. 00MMSb3 BUK441-60A BUK441-60B 3909 PDF

    GP1UM28YK

    Abstract: GP1UM281YK infrared based security system GP1UM28YK Series
    Text: SPEC. No. ED-00211 SSU|C December 18, 2000 SHARP OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR Infrared Detecting unit for Remote Control MODEL No. GP1UM28YK series Specified for Enclosed please find copies of the Specifications which


    OCR Scan     		ED-00211 GP1UM28YK 11-sheet) 200pcs. 10-tray) 2000pcs RUD0X14 GP1UM281YK infrared based security system GP1UM28YK Series PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB


    OCR Scan     		2SC3908 2SC3908 30MHz, 30MHz. PDF

    Untitled

    Abstract: No abstract text available
    Text: ÎZ T ^ SGS-THOMSON SD1423 7 # . RF"& MICROWAVE TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS • ■ . ■ ■ ■ 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION . P o u t — 15 W MIN. WITH 8.0 dB GAIN


    OCR Scan     		SD1423 800-960MHZ SD1423 SD1424. PDF