4 npn transistor ic 14pin
Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA102
PA102B:
14-pin
PA102G:
PA102
4 npn transistor ic 14pin
8 npn transistor ic 14pin
C10535E
UPA102G
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4 npn transistor ic 14pin
Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA101
PA101B:
14-pin
PA101G:
PA101B-E1
4 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
C10535E
Silicon Bipolar Transistor Q6
MICRO-X TRANSISTOR MARK Q6
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Untitled
Abstract: No abstract text available
Text: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package
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RN1973
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RN1973
Abstract: No abstract text available
Text: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package
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RN1973
RN1973
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4 npn transistor ic 14pin
Abstract: C10535E PA103 lowest noise audio NPN transistor
Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:
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PA103
PA103B:
PA103G:
14-pin
PA103
4 npn transistor ic 14pin
C10535E
lowest noise audio NPN transistor
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RN1673
Abstract: No abstract text available
Text: RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1673 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm • Two devices are incorporated into a Super-Mini (6 pin) package
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RN1673
RN1673
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RN1972FS
Abstract: RN1973FS RN2972FS RN2973FS 1FS6
Text: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) package
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RN1972FS
RN1973FS
RN2972FS,
RN2973FS
RN1973FS
RN2972FS
RN2973FS
1FS6
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STC403
Abstract: AUK Transistor transistor stc403
Text: STC403 NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC403
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STC403
O-220F-3L
SDB20D45
KSD-T0O017-002
STC403
AUK Transistor
transistor stc403
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JANTXV4N24U
Abstract: JANTX4N22U JANTX4N24U 4N22U 4N23U 4N24U JAN4N22U JAN4N23U JAN4N24U
Text: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area
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4N22U
4N23U
4N24U
MIL-PRF-19500/486
4N22U,
4N23U
4N24U
JANTXV4N24U
JANTX4N22U
JANTX4N24U
4N22U
JAN4N22U
JAN4N23U
JAN4N24U
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Untitled
Abstract: No abstract text available
Text: RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1673 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm • Two devices are incorporated into a Super-Mini (6 pin) package
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RN1673
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JANTX4N24U
Abstract: JANTXV4N24U 4N22U 4N23U 4N24U JAN4N22U JAN4N23U JAN4N24U JANTX4N22U
Text: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area
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4N22U
4N23U
4N24U
MIL-PRF-19500/486
4N22U,
4N23U
4N24U
JANTX4N24U
JANTXV4N24U
4N22U
JAN4N22U
JAN4N23U
JAN4N24U
JANTX4N22U
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4n49 OPTOCOUPLER
Abstract: TRANSISTOR REPLACEMENT GUIDE proton optocoupler 66168 66168-300 66168-105 4N49 4N49 JANTX
Text: 66168 Mii PROTON RADIATION TOLERANT OPTOCOUPLER Pin-for-Pin Replacement for 4N49 OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package
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MIL-PRF-19500/548
JANT001
4n49 OPTOCOUPLER
TRANSISTOR REPLACEMENT GUIDE
proton
optocoupler 66168
66168-300
66168-105
4N49
4N49 JANTX
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Untitled
Abstract: No abstract text available
Text: RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2707JE, RN2708JE, RN2709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package.
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RN2707JE
RN2709JE
RN2707JE,
RN2708JE,
RN1707JE
RN1709JE
RN2707JE
10mitation,
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RN1907FE
Abstract: RN1909FE RN2907FE RN2908FE RN2909FE
Text: RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2907FE,RN2908FE,RN2909FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
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RN2907FE
RN2909FE
RN2908FE
RN1907FE
RN1909FE
RN2908FE
RN2907FE
RN1909FE
RN2909FE
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Untitled
Abstract: No abstract text available
Text: RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2907FE, RN2908FE, RN2909FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
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RN2907FE
RN2909FE
RN2907FE,
RN2908FE,
RN1907FE
RN1909FE
RN2908FE
RN2907FE
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NR3015
Abstract: NR3015T1R0N 33X3 2016 LED power INDUCTOR LM3519 LM3519MK-20 LM3519MKX-20 06036D475MAT-6 06033D105MAT-25V
Text: LM3519 Connection Diagram 6-Lead SOT23 Package 20160202 Top View Pin Descriptions Pin # Name 1 En Description Device Enable Connection 2 Gnd Ground Connection 3 VOUT Output Voltage Connection 4 LED_rtn White LED Current Sensing Input Connection 5 SW Drain Connection of the Internal Power Field Effect Transistor FET Switch
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LM3519
LM3519MK-20
LM3519MKX-20
CSP-9-111S2)
CSP-9-111S2.
NR3015
NR3015T1R0N
33X3
2016
LED power INDUCTOR
LM3519
LM3519MK-20
LM3519MKX-20
06036D475MAT-6
06033D105MAT-25V
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INA-12063
Abstract: INA-12 INA-12063-BLK INA-12063-TR1 ir 032
Text: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance
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INA-12063
OT-363
SC-70)
INA-12063
5965-5365E
INA-12
INA-12063-BLK
INA-12063-TR1
ir 032
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285-1
Abstract: 6024-K bob smith termination amp 4546 jc rfics marking 76 RHO marking waveguide selective switch INA-12 INA-12063 INA-12063-BLK
Text: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance
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INA-12063
OT-363
SC-70)
INA-12063
285-1
6024-K
bob smith termination
amp 4546 jc
rfics marking 76
RHO marking
waveguide selective switch
INA-12
INA-12063-BLK
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AC2500
Abstract: K4N32 K4N32A
Text: Photocoupler K4N32 • K4N32A DIMENSION These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Unit : mm Diode and a Silicon NPN Photo Darlington transistor in a 6-pin 7.62 package. 6 5 4 1 2 3 0.25 6.4 0.25 FEATURES 6.4 • Small Package Size
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K4N32
K4N32A
AC2500Vrms
E107486
51Min.
AC2500
K4N32
K4N32A
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AC2500
Abstract: K4N29 K4N29A
Text: Photocoupler K4N29 • K4N29A DIMENSION These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Unit : mm Diode and a Silicon NPN Photo Darlington transistor in a 6-pin 7.62 package. 6 5 4 1 2 3 0.25 6.4 0.25 FEATURES 6.4 • Small Package Size
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K4N29
K4N29A
AC2500Vrms
E107486
51Min.
AC2500
K4N29
K4N29A
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STC405
Abstract: IC DATE CODE
Text: STC405 NPN Silicon Transistor Features PIN Connection • Low saturation switching application • Voltage regulator application • High Voltage : VCEO=60V Min. 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC405 STC405 TO-220F-3L Marking Diagram
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STC405
O-220F-3L
SDB20D45
KSD-T0O064-001
STC405
IC DATE CODE
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M81049
Abstract: M81049P SDIP20 DIP20-P-300-2
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M81049P/SP/FP OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR DESCRIPTION M81049 is octal D-type flip-flop driver by 20-pin package. It has 8 same circuit units which is composed of D-type flip-flop logic circuit and high voltage NchMOS output transistor.
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M81049P/SP/FP
M81049
20-pin
20P2N-A
20pin
300mil
OP20-P-300-1
M81049P
SDIP20
DIP20-P-300-2
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transistor truth table
Abstract: BUK223-50Y
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK223-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL
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BUK223-50Y
transistor truth table
BUK223-50Y
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BUK117-50DL
Abstract: TOPFET
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin plastic package. APPLICATIONS General purpose switch for driving
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