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    TRANSISTOR PACKAGE PIN DIAGRAM Search Results

    TRANSISTOR PACKAGE PIN DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PACKAGE PIN DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4 npn transistor ic 14pin

    Abstract: 8 npn transistor ic 14pin C10535E UPA102G
    Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA102 PA102B: 14-pin PA102G: PA102 4 npn transistor ic 14pin 8 npn transistor ic 14pin C10535E UPA102G

    4 npn transistor ic 14pin

    Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
    Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA101 PA101B: 14-pin PA101G: PA101B-E1 4 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6

    SS TRANSISTOR

    Abstract: No abstract text available
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		PDF TC120 600mA 300kHz TC120503EHA TC120303EHA D-81739 DS21365B-page SS TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package


    Original     		PDF RN1973

    Untitled

    Abstract: No abstract text available
    Text: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package


    Original     		PDF RN1973

    RN1973

    Abstract: No abstract text available
    Text: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package


    Original     		PDF RN1973 RN1973

    4 npn transistor ic 14pin

    Abstract: C10535E PA103 lowest noise audio NPN transistor
    Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:


    Original     		PDF PA103 PA103B: PA103G: 14-pin PA103 4 npn transistor ic 14pin C10535E lowest noise audio NPN transistor

    RN1673

    Abstract: No abstract text available
    Text: RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1673 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm • Two devices are incorporated into a Super-Mini (6 pin) package


    Original     		PDF RN1673 RN1673

    RN1972FS

    Abstract: RN1973FS RN2972FS RN2973FS 1FS6
    Text: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) package


    Original     		PDF RN1972FS RN1973FS RN2972FS, RN2973FS RN1973FS RN2972FS RN2973FS 1FS6

    STC403

    Abstract: AUK Transistor transistor stc403
    Text: STC403 NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC403


    Original     		PDF STC403 O-220F-3L SDB20D45 KSD-T0O017-002 STC403 AUK Transistor transistor stc403

    Untitled

    Abstract: No abstract text available
    Text: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) package


    Original     		PDF RN1972FS RN1973FS RN2972FS, RN2973FS

    Untitled

    Abstract: No abstract text available
    Text: STC403 NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC403


    Original     		PDF STC403 O-220F-3L SDB20D45 KSD-T0O017-003

    4N49

    Abstract: No abstract text available
    Text: 66168 Mii PROTON RADIATION TOLERANT OPTOCOUPLER Pin-for-Pin Replacement for 4N49 OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package


    Original     		PDF MIL-PRF-19500/548 4N49

    JANTXV4N24U

    Abstract: JANTX4N22U JANTX4N24U 4N22U 4N23U 4N24U JAN4N22U JAN4N23U JAN4N24U
    Text: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area


    Original     		PDF 4N22U 4N23U 4N24U MIL-PRF-19500/486 4N22U, 4N23U 4N24U JANTXV4N24U JANTX4N22U JANTX4N24U 4N22U JAN4N22U JAN4N23U JAN4N24U

    Untitled

    Abstract: No abstract text available
    Text: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.


    Original     		PDF RN47A1 RN1110F 0062g RN2110F

    Untitled

    Abstract: No abstract text available
    Text: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area


    Original     		PDF 4N22U 4N23U 4N24U MIL-PRF-19500/486 4N22U, 4N23U 4N24U

    JANTX4N24U

    Abstract: JANTXV4N24U 4N22U 4N23U 4N24U JAN4N22U JAN4N23U JAN4N24U JANTX4N22U
    Text: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area


    Original     		PDF 4N22U 4N23U 4N24U MIL-PRF-19500/486 4N22U, 4N23U 4N24U JANTX4N24U JANTXV4N24U 4N22U JAN4N22U JAN4N23U JAN4N24U JANTX4N22U

    Untitled

    Abstract: No abstract text available
    Text: RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1673 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm • Two devices are incorporated into a Super-Mini (6 pin) package


    Original     		PDF RN1673

    RN1110F

    Abstract: RN2110F RN47A1
    Text: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.


    Original     		PDF RN47A1 RN1110F 0062g RN2110F RN1110F RN2110F RN47A1

    4n49 OPTOCOUPLER

    Abstract: TRANSISTOR REPLACEMENT GUIDE proton optocoupler 66168 66168-300 66168-105 4N49 4N49 JANTX
    Text: 66168 Mii PROTON RADIATION TOLERANT OPTOCOUPLER Pin-for-Pin Replacement for 4N49 OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package


    Original     		PDF MIL-PRF-19500/548 JANT001 4n49 OPTOCOUPLER TRANSISTOR REPLACEMENT GUIDE proton optocoupler 66168 66168-300 66168-105 4N49 4N49 JANTX

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> DESCRIPTION PIN CONFIGURATION FEATURES > APPLICATION Package type CIRCUIT DIAGRAM FUNCTION The seven circuits share the VCC and GND. Unit ABSOLUTE MAXIMUM RATINGS Unless otherwise noted, Ta = –20 ~ +75°C Symbol


    Original     		PDF

    UPA102G

    Abstract: transistor PACKAGE PIN DIAGRAM
    Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM • TW O BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE LINEARITY • TW O PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceram ic package


    OCR Scan     		PDF UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B UPA102B/G UPA102G transistor PACKAGE PIN DIAGRAM

    Transistor Array differential amplifier

    Abstract: transistor array high speed G141C UPA102G
    Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hre LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceramic package


    OCR Scan     		PDF UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B UPA102B/G Transistor Array differential amplifier transistor array high speed G141C UPA102G

    optocoupler 66168

    Abstract: 66168-105
    Text: 66168 Features: Applications: • • • • • • • • • • mn - PROTON RADIATION TOLERANT OPTOCOUPLER Pin-for-Pin Replacement for 4N49 High Reliability Base lead provided for conventional transistor biasing Rugged package Stability over wide temperature


    OCR Scan     		PDF MIL-PRF-19500/548 optocoupler 66168 66168-105