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    TRANSISTOR P37 Search Results

    TRANSISTOR P37 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P37 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    XC6SLX16-CSG324

    Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
    Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller


    Original     		DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL PDF

    transistor f420

    Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
    Text: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2


    OCR Scan     		2SK67A t11-or-h t1780 transistor f420 transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010 PDF

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


    OCR Scan     		PDF

    tyco igbt module

    Abstract: tyco igbt 6a tyco igbt P370-B01-PM p370b P372 tyco igbt module 10a igbt tyco tyco igbt module 3 phase flowpim
    Text: Target Data - PRELEMINARY Module with PFC + Shunt + NTC flowPIM0 + P Features / Eigenschaften • • • • • • • 1 Phase Input Rectifier PFC Transistor + Diode 3 Phase Inverter IGBT + FRED HF-Capacitor in DC Link Current sense shunt in the DC–


    Original     		D-81359 V23990P371-B01-PM P372-B01-PM P370-B01-PM tyco igbt module tyco igbt 6a tyco igbt P370-B01-PM p370b P372 tyco igbt module 10a igbt tyco tyco igbt module 3 phase flowpim PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLP371,TLP372 TO SHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI P371 M m g TI P 3 7 ? • ■ HHT ■ ■ «MF « OFFICE M AC H IN E HOUSEHOLD USE EQUIPM ENT T E LE C O M M U N IC A TIO N SOLID STATE RELAY PRO G R AM M ABLE CONTROLLERS The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide


    OCR Scan     		TLP371 TLP372 P371m TLP372 PDF

    2N6849

    Abstract: No abstract text available
    Text: Tem ic SU.CO-X_2N6849 P-Channel Enhancement-Mode Transistor Product Summary V BR I)SS (V) r DS(on) (Q ) ID (A) -100 0.30 -6 .5 Parametric limits in accordance with MIL-S-19500/564 where applicable. TO-205AF (TO-39) r O — —if-


    OCR Scan     		2N6849 MIL-S-19500/564 O-205AF P-37010--Rev. 06/06M 2N6849 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 2N7086 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Q ) I d (A) 200 0.16 14 TO-257AB H erm etic P ackage O r O — It J |i Case Isolated s G D S Top View


    OCR Scan     		2N7086 O-257AB P-37012--Rev. PDF

    transistor c3909

    Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor PDF

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57 PDF

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J PDF

    TO-257AB

    Abstract: No abstract text available
    Text: T e m ic 2N7090 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS OO ' ri)S(on) (Q ) I d (A) 0.80 -5 .7 -2 0 0 TO-2S7AB Hermetic Package S Q o Case Isolated Ô D G D S P-Channel M OSFET Top View


    OCR Scan     		2n7090 O-257AB P-37012â TO-257AB PDF

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J PDF

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,


    Original     		VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		2N6851 M1L-S-19500I564 1503C) P-37010-- PDF

    SMW45N10

    Abstract: 37392 A2631 NS6040
    Text: Tem ic SMW45N10 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d {A) 100 0.040 45 T O -247AD I o G D S N -C h an n el M O S F E T Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Parameter


    OCR Scan     		SMW45N10 -247AD r392-- P-37392--Rev. SMW45N10 37392 A2631 NS6040 PDF

    2N7080

    Abstract: No abstract text available
    Text: T em ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 -9 .5 TO-2S4AA Hermetic Package o rO |h D S G P-C hannel M O S F E T Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		2n7080 P-37012â 2N7080 PDF

    b0725

    Abstract: No abstract text available
    Text: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR Dss Min (V) rDS<on) Max (Q) V g s (Ui) (V) I d (A) -6 0 5 @ V o s = -1 0 V - 2 to -4 .5 -0.41 Features Benefits • • • • • • • • • • High-Side Switching


    OCR Scan     		VQ2004J 2004J P-37655--Rev. b0725 PDF

    2N6849

    Abstract: W41A
    Text: 2N6849 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.30 –6.5 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		2N6849 MIL-S-19500/564 O-205AF P-37010--Rev. 06-Jun-94 2N6849 W41A PDF

    2N6851

    Abstract: No abstract text available
    Text: 2N6851 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –200 0.80 –4.0 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		2N6851 MIL-S-19500/564 O-205AF P-37010--Rev. 06-Jun-94 2N6851 PDF

    b0725

    Abstract: No abstract text available
    Text: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS M in (V) *DS(on) M a x (Q ) V GS(th) (V) I d (A) -6 0 5 @ V g s = -10 V - 2 to - 4 .5 -0 .4 1 Features Benefits Applications • • • • • • • • • •


    OCR Scan     		VQ2004J P-37655--Rev. b0725 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SMD10P06 Siliconix P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) IDa (A) -6 0 0.28 -1 0 S Q DPAK (TO-252) D n°n G S Ô D Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		SMD10P06 O-252) P-37011-- PDF

    2N7080

    Abstract: No abstract text available
    Text: Tem ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 - 9 .5 T O -2 5 4 A A S H erm etic Package 9 O C ase Isolated O u uu D D S G Top View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		2N7080 P-37012-- 2N7080 PDF

    Untitled

    Abstract: No abstract text available
    Text: T e m ic 2N7090 Siliconix_ P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) ( ß ) I d (A) -2 0 0 0.80 - 5 .7 TO-257AB H erm etic Package S 9 O C ase iso lated O D UUU G D S Tbp View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		2N7090 O-257AB P-37012-- 2N7090_ PDF