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    TRANSISTOR P37 Search Results

    TRANSISTOR P37 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P37 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XC6SLX16-CSG324

    Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
    Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller


    Original     		PDF DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL

    tyco igbt module

    Abstract: tyco igbt 6a tyco igbt P370-B01-PM p370b P372 tyco igbt module 10a igbt tyco tyco igbt module 3 phase flowpim
    Text: Target Data - PRELEMINARY Module with PFC + Shunt + NTC flowPIM0 + P Features / Eigenschaften • • • • • • • 1 Phase Input Rectifier PFC Transistor + Diode 3 Phase Inverter IGBT + FRED HF-Capacitor in DC Link Current sense shunt in the DC–


    Original     		PDF D-81359 V23990P371-B01-PM P372-B01-PM P370-B01-PM tyco igbt module tyco igbt 6a tyco igbt P370-B01-PM p370b P372 tyco igbt module 10a igbt tyco tyco igbt module 3 phase flowpim

    transistor c3909

    Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,


    Original     		PDF VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J

    2N6849

    Abstract: W41A
    Text: 2N6849 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.30 –6.5 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF 2N6849 MIL-S-19500/564 O-205AF P-37010--Rev. 06-Jun-94 2N6849 W41A

    2N6851

    Abstract: No abstract text available
    Text: 2N6851 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –200 0.80 –4.0 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF 2N6851 MIL-S-19500/564 O-205AF P-37010--Rev. 06-Jun-94 2N6851

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    transistor f420

    Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
    Text: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2


    OCR Scan     		PDF 2SK67A t11-or-h t1780 transistor f420 transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLP371,TLP372 TO SHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI P371 M m g TI P 3 7 ? • ■ HHT ■ ■ «MF « OFFICE M AC H IN E HOUSEHOLD USE EQUIPM ENT T E LE C O M M U N IC A TIO N SOLID STATE RELAY PRO G R AM M ABLE CONTROLLERS The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide


    OCR Scan     		PDF TLP371 TLP372 P371m TLP372

    2N6849

    Abstract: No abstract text available
    Text: Tem ic SU.CO-X_2N6849 P-Channel Enhancement-Mode Transistor Product Summary V BR I)SS (V) r DS(on) (Q ) ID (A) -100 0.30 -6 .5 Parametric limits in accordance with MIL-S-19500/564 where applicable. TO-205AF (TO-39) r O — —if-


    OCR Scan     		PDF 2N6849 MIL-S-19500/564 O-205AF P-37010--Rev. 06/06M 2N6849

    TO-257AB

    Abstract: No abstract text available
    Text: T e m ic 2N7090 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS OO ' ri)S(on) (Q ) I d (A) 0.80 -5 .7 -2 0 0 TO-2S7AB Hermetic Package S Q o Case Isolated Ô D G D S P-Channel M OSFET Top View


    OCR Scan     		PDF 2n7090 O-257AB P-37012â TO-257AB

    2n6851

    Abstract: No abstract text available
    Text: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET


    OCR Scan     		PDF 2n6851 MIL-S-19500/564 Param2n6851_ P-37010â 2SM735

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N6851 M1L-S-19500I564 1503C) P-37010--

    SMW45N10

    Abstract: 37392 A2631 NS6040
    Text: Tem ic SMW45N10 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d {A) 100 0.040 45 T O -247AD I o G D S N -C h an n el M O S F E T Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Parameter


    OCR Scan     		PDF SMW45N10 -247AD r392-- P-37392--Rev. SMW45N10 37392 A2631 NS6040

    2N7080

    Abstract: No abstract text available
    Text: T em ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 -9 .5 TO-2S4AA Hermetic Package o rO |h D S G P-C hannel M O S F E T Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2n7080 P-37012â 2N7080

    b0725

    Abstract: No abstract text available
    Text: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR Dss Min (V) rDS<on) Max (Q) V g s (Ui) (V) I d (A) -6 0 5 @ V o s = -1 0 V - 2 to -4 .5 -0.41 Features Benefits • • • • • • • • • • High-Side Switching


    OCR Scan     		PDF VQ2004J 2004J P-37655--Rev. b0725

    b0725

    Abstract: No abstract text available
    Text: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS M in (V) *DS(on) M a x (Q ) V GS(th) (V) I d (A) -6 0 5 @ V g s = -10 V - 2 to - 4 .5 -0 .4 1 Features Benefits Applications • • • • • • • • • •


    OCR Scan     		PDF VQ2004J P-37655--Rev. b0725

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SMD10P06 Siliconix P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) IDa (A) -6 0 0.28 -1 0 S Q DPAK (TO-252) D n°n G S Ô D Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF SMD10P06 O-252) P-37011--

    2N7080

    Abstract: No abstract text available
    Text: Tem ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 - 9 .5 T O -2 5 4 A A S H erm etic Package 9 O C ase Isolated O u uu D D S G Top View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7080 P-37012-- 2N7080

    Untitled

    Abstract: No abstract text available
    Text: T e m ic 2N7090 Siliconix_ P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) ( ß ) I d (A) -2 0 0 0.80 - 5 .7 TO-257AB H erm etic Package S 9 O C ase iso lated O D UUU G D S Tbp View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7090 O-257AB P-37012-- 2N7090_