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    TRANSISTOR P3055 Search Results

    TRANSISTOR P3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P305

    Abstract: P3055LL p3055
    Text: P3055LL N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM SOT-223 D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 120mΩ 6A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P3055LL OT-223 P3055LL" DEC-03-2001 OT-223 P305 P3055LL p3055

    P3055

    Abstract: P3055LS
    Text: P3055LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P3055LS O-263 P3055LS" DEC-03-2001 P3055 P3055LS

    SEM 2004

    Abstract: P3055LLG
    Text: P3055LLG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM SOT-223 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 90mΩ 6A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P3055LLG OT-223 NOV-05-2004 OT-223 SEM 2004 P3055LLG

    p3055lsg

    Abstract: No abstract text available
    Text: P3055LSG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P3055LSG O-263 AUG-13-2004 p3055lsg

    P3055LD

    Abstract: NIKO P3055LD p3055ld niko niko p3055ld equivalent DIODE P3055LD P3055LD equivalent transistor P3055LD
    Text: P3055LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P3055LD O-252 P3055LD" DEC-01-2001 P3055LD NIKO P3055LD p3055ld niko niko p3055ld equivalent DIODE P3055LD P3055LD equivalent transistor P3055LD

    P3055LDG

    Abstract: P3055LD dpak DIODE P3055LDG equivalent transistor p3055ldg dpak code P3055 P3055Ldg equivalent sm 17 35 tc TO252
    Text: P3055LDG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P3055LDG O-252 Tst2004 AUG-17-2004 P3055LDG P3055LD dpak DIODE P3055LDG equivalent transistor p3055ldg dpak code P3055 P3055Ldg equivalent sm 17 35 tc TO252

    P3055E

    Abstract: P3055EL MBR201OOCT 12Vt024V 314B motorola MC3 930b motorola transistor MC353 p3055 MC33166 MC341
    Text: Order this document by MC34166~ MOTOROLA - MC34166 MC33166 Power Switching Regulators The MC341 66, MC33166 series are high performance fixed frequency power switching regulators that contain the prima~ functions required for de–to-de converters. This series was specifically


    Original     		PDF MC34166~ MC34166 MC33166 MC341 MC33166 MC34166 602-2q rn070R0LA P3055E P3055EL MBR201OOCT 12Vt024V 314B motorola MC3 930b motorola transistor MC353 p3055

    4011N

    Abstract: 4013N 4011-N 94HB IC 4015N TIF140 P3055 4021N Bc 140 transistor transistor BC 55 gb
    Text: Leiterplattenführung horizontal Horizontal Press-in Card Guide CGI-W-160 r Nur eine Standardlänge speziell für Leiterplatten mit max. 2,3 mm Stärke, Wandhöhe 2,4 mm. One standard lenght for PCBs with max. 2,3 mm thickness, wall height 2,4 mm. r Montage: / Mounting:


    Original     		PDF CGI-W-160 H1-50 H2-50 D-85640 4011N 4013N 4011-N 94HB IC 4015N TIF140 P3055 4021N Bc 140 transistor transistor BC 55 gb

    circuit humidity sensor his06

    Abstract: DUSB-ARA42-T11A-FA DUSB-BRA42-T11-FA GF12-US0520 Humidifier his-06 "Humidity Sensors" his-06 mpz2012s300AT MCR03EZPF102 MB91F662 GCM32ER71E106KA42L
    Text: FR80 Family 32-BIT MICROCONTROLLER MB91F662 bits pot black USB board User's Manual Disclaimer and Legal Notice „ The contents of this document are subject to change without a prior notice, thus ask our sales division about the latest one. „ The descriptions of functions and application circuit examples in this document are provided


    Original     		PDF 32-BIT MB91F662 circuit humidity sensor his06 DUSB-ARA42-T11A-FA DUSB-BRA42-T11-FA GF12-US0520 Humidifier his-06 "Humidity Sensors" his-06 mpz2012s300AT MCR03EZPF102 MB91F662 GCM32ER71E106KA42L

    P3055L

    Abstract: P3055
    Text: Philips S em iconductors Product specification P o w e rM O S transistor PHP3055L L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level field-effect power transistor in a


    OCR Scan     		PDF PHP3055L P3055L P3055

    PNP3055

    Abstract: transistor pnp3055
    Text: MAGNA PNP3055 D esc rip tio n The PN P3055 is a silicon epitaxial-base PN P pow er transistor. The part is designed for pow er sw itching circuits, output stages and hi-fi am plifiers. T O -3 DIMENSIONS mm A B c D E G H L M N P inches min max min max 25 38.5


    OCR Scan     		PDF PNP3055 PNP3055 200mA 200mA transistor pnp3055

    SN76477

    Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
    Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p


    OCR Scan     		PDF 2114L 6116P3 6116LP3 AY-3-1270 AY-3-1350 AY-3-8910 AY-3-8912 AY-5-1230 CA3080E CA3130E SN76477 TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131