transistor
Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor
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X13769XJ2V0CD00
O-126)
MP-25
O-220)
MP-40
MP-45
MP-45F
O-220
MP-80
MP-10
transistor
POWER MOS FET 2sj 2sk
transistor 2sk
2SK type
n channel fet array
Low frequency power transistor
transistor mp40
TRANSISTOR P 3
high hfe transistor
list
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Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide
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A/20V
16P2Z
16pin
225mil
05MIN.
20pin
300mil
20P2N
20P2E
Mitsubishi M54564
M54534
M54571P
m54667p
M54585FP
m54571
M54566FP
16P2N
M54522P equivalent
m54532p
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tyco igbt
Abstract: SPWM 555 spwm igbt tyco igbt 1200V HP-1001 SPWM Inverter
Text: V23990-P360-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P360-F
Tj150
D81359
tyco igbt
SPWM 555
spwm igbt
tyco igbt 1200V
HP-1001
SPWM Inverter
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sc 6038
Abstract: tyco igbt p363
Text: V23990-P363-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P363-F
D81359
sc 6038
tyco igbt
p363
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tyco igbt
Abstract: V23990-P365-F 600v 30 kHz IGBT
Text: V23990-P365-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P365-F
D81359
tyco igbt
V23990-P365-F
600v 30 kHz IGBT
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PRDP0016AA-A
Abstract: No abstract text available
Text: Magazine code Magazine material P300PC PVC Polyvinyl chloride Package name Renesas code Previous code DIP-16 PRDP0016AA-A 16P4 Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box
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P300PC
DIP-16
PRDP0016AA-A
PRDP0016AA-A
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tyco igbt
Abstract: P363 V23990-P363-F-PM diode rg 28
Text: Targetdatasheet flow PACK 0, 600V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P363-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P363-F-PM
-100A/ms
D81359
tyco igbt
P363
V23990-P363-F-PM
diode rg 28
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MC 340 transistor
Abstract: P367 tyco igbt 1200V V23990-P367-F-PM
Text: Target datasheet flow PACK 0, 1200V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P367-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P367-F-PM
-100A/ms
D81359
MC 340 transistor
P367
tyco igbt 1200V
V23990-P367-F-PM
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V23990-P366-F-PM
Abstract: tyco igbt tyco igbt 1200V
Text: Target datasheet flow PACK 0, 1200V, 10A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P366-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P366-F-PM
D81359
V23990-P366-F-PM
tyco igbt
tyco igbt 1200V
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p364
Abstract: tyco igbt V23990-P364-F-PM V23990-P364 ntcthermistor nf012 ntc-thermistor Diode DR 25
Text: Target datasheet flow PACK 0, 600V, 20A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P364-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P364-F-PM
D81359
p364
tyco igbt
V23990-P364-F-PM
V23990-P364
ntcthermistor
nf012
ntc-thermistor
Diode DR 25
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SO692
Abstract: so692 equivalent SO642 transistor P39
Text: SO692 SMALL SIGNAL PNP TRANSISTOR • ■ ■ ■ Type Marking SO 692 P39 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER NPN COMPLEMENT IS SO642 2
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SO692
SO642
OT-23
SO692
so692 equivalent
SO642
transistor P39
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transistor P39
Abstract: No abstract text available
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642
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SO692
OT-23
SO642
OT-23
transistor P39
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transistor P39
Abstract: No abstract text available
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642 s
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SO692
OT-23
SO642
OT-23
transistor P39
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Untitled
Abstract: No abstract text available
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC SOT-23 PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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SO692
OT-23
SO642
OT-23
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transistor P39
Abstract: No abstract text available
Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS THE PNP COMPLEMENTARY TYPE IS SO642 APPLICATIONS VIDEO AMPLIFIER CIRCUITS RGB
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SO692
SO642
OT-23
transistor P39
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Untitled
Abstract: No abstract text available
Text: MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. • Guaranteed Base–Emitter Voltage Matching
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MC3346
MC3346
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CA3146D
Abstract: No abstract text available
Text: CA3146 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The CA3146 is designed for general purpose, low power applications in the dc through VHF range. • Guaranteed Base–Emitter Voltage Matching
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CA3146
CA3146
CA3146D
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RT1P441
Abstract: RT3P33M
Text: PRELIMINARY RT3P33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3P33M is a composite transistor built with Unit：mm 2.1 RT1P441 chip and RT1P441 chip in SC-88 package. 2.0 Each transistor elements are independent.
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RT3P33M
RT3P33M
RT1P441
SC-88
JEITASC-88
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HAT1058C
Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,
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notic50
SON3024-8
HAT1062G
ADE-A08-003Q
HAT1058C
HAT2106G
HAT1068C
Hitachi MOSFET
HAT3016G
H5P0201MF
BB304M
FU 3024
wba sot23
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2SA1444 equivalent
Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992
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X13769XJ2V0CD00
2SA1206
2SC1674
2SA988
2SA992
2SC1841
2SC1845
2SA733
2SA990
2SC945
2SA1444 equivalent
BA1F4M
transistor equivalent table
POWER MOS FET 2sj 2sk
2sd882 equivalent
Equivalent to transistor 2sc945
2SA1206 TRANSISTOR equivalent
2SC1845 equivalent
2SK type
2SD1694 equivalent
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eiaj SC70
Abstract: mo-203aa a 4x transistor
Text: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-3 0.20 (0.008) M P3.049 VIEW C C 3 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL b INCHES SYMBOL 6 5 4 CL CL E1 E 1 2 3 e e1 D C CL A A2 SEATING PLANE A1 -C- PLATING
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SC70-3)
5M-1994.
MO-203AA.
eiaj SC70
mo-203aa
a 4x transistor
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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OCR Scan
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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S0692
Abstract: No abstract text available
Text: f l 7 SGS-THOM SON ^7# R ILECTI3 m gi S0692 SMALL SIGNAL PNP TRANSISTOR Type Marking S0692 P39 • SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER
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OCR Scan
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S0692
S0642
OT-23
SC06810
OT-23
S0692
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transistor 45 f 122
Abstract: BFQ32C SOT173 GHz PNP transistor BFP96
Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X
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BFQ32C
OT173
OT173X
BFP96.
711002b
OT173.
D0M542fl
transistor 45 f 122
BFQ32C
SOT173
GHz PNP transistor
BFP96
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