TRANSISTOR P1D Search Results

TRANSISTOR P1D Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TRANSISTOR P1D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SGA9289Z Abstract: No abstract text available Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This	Original	SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1	PDF
Untitled Abstract: No abstract text available Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF	Original	SGA9189Z OT-89 SGA9189Z 39dBm, SGA9189Zâ SGA9189ZSQ SGA9189ZSR	PDF
SGA9289Z Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9 Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This	Original	SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9	PDF
sga9189z Abstract: marking p1z SGA-9189Z marking p1z transistor Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF	Original	SGA9189Z SGA9189Z OT-89 39dBm, SGA9189Z" SGA9189ZSQ SGA9189ZSR marking p1z SGA-9189Z marking p1z transistor	PDF
Untitled Abstract: No abstract text available Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This	Original	SGA9189Z SGA9189Z OT-89 39dBm, SGA9189ZSQ SGA9189ZSR SGA9189Z-EVB1	PDF
Untitled Abstract: No abstract text available Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809	PDF
SGA8543Z-EVB2 Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P	PDF
Untitled Abstract: No abstract text available Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	SGA9089Z OT-89 SGA9089Z 50MHz 05GHz 44GHz	PDF
Transistor TL 31 AC Abstract: j142 Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142	PDF
SiGe POWER TRANSISTOR Abstract: Gan hemt transistor RFMD InP HBT transistor low noise Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	SGA9089Z SGA9089Z OT-89 50MHz 05GHz 44GHz SiGe POWER TRANSISTOR Gan hemt transistor RFMD InP HBT transistor low noise	PDF
SGA-9089Z Abstract: InP HBT transistor low noise Text: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	SGA-9089Z OT-89 SGA-9089Z 50MHz 170mA EDS-105051 SGA9089Z" InP HBT transistor low noise	PDF
SGA9189 Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to	Original	SGA-9189 OT-89 39dBm, SGA9189Z" SGA9189" SGA-9189Z EDS-101497 SGA9189 marking p1z 130C SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor	PDF
MARKING P2Z Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89 Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to	Original	SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89	PDF
b 595 transistor Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335 Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor	Original	MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335	PDF

J231 transistor Abstract: j392 diode germanium tu 38 f SGA-9289 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z Text: Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe	Original	SGA-9289 SGA-9289Z SGA-9289 270mA OT-89 EDS-101498 J231 transistor j392 diode germanium tu 38 f 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z	PDF
AN1541 Abstract: transistor 22p 30mils L239N START499 transistor k 316 Text: AN1541 APPLICATION NOTE A MEDIUM POWER AMPLIFIER AT 1.8 GHz USING THE NPN Si START499 TRANSISTOR Data at 1.8 GHz 3V, 200mA Gain = 15dB, P1dBout = 23dBm, NF = 3.3dB, RLin > 12dB, RLout > 7.7dB START499 is a product of the START Family (ST Advanced Radio frequency Transistor). Housed in the	Original	AN1541 START499 200mA) 23dBm, OT-343 SC-70) 30mils AN1541 transistor 22p L239N transistor k 316	PDF
BPT23E01 Abstract: BPT30E01 BPT30E02 BPT30E04 bipolarics Text: BIPOLARICS, INC. Part Number BPT23E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 30.0 dBm, P1dB @ 3.0 GHz • High Gain Bandwidth Product ft = 6.0 GHz @ IC = 200 mA • High Gain Bipolarics' BPT30E01 is a high performance silicon bipolar transistor	Original	BPT23E01 BPT30E01 BPT30E02 BPT30E04, BPT30E01 BPT23E01 BPT30E04 bipolarics	PDF
BPT23E01 Abstract: BPT23E02 BPT23E04 POWER TRANSISTOR 1 WATT 2.4 GHZ Text: BIPOLARICS, INC. Part Number BPT23E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 30.0 dBm, P1dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.0 GHz @ IC = 200 mA • High Gain Bipolarics' BPT23E01 is a high performance silicon bipolar transistor	Original	BPT23E01 BPT23E01 BPT23E02 BPT23E04, BPT23E04 POWER TRANSISTOR 1 WATT 2.4 GHZ	PDF
BPT18E01 Abstract: BPT18E02 BPT18E05 Text: BIPOLARICS, INC. Part Number BPT18E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 30.0 dBm, P1dB @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 200 mA t • High Gain Bipolarics' BPT18E01 is a high performance silicon bipolar transistor	Original	BPT18E01 BPT18E01 BPT18E02 BPT18E05, BPT18E02 BPT18E05	PDF
DRF1601 Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.	Original	DRF1601 DRF1601 OT-223 900MHz 100nF 100pF smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER	PDF
AN1541 Abstract: START499 Text: AN1541 APPLICATION NOTE A MEDIUM POWER AMPLIFIER AT 1.8 GHz USING THE NPN Si START499 TRANSISTOR Data at 1.8 GHz 3V, 200mA Gain = 15dB, P1dBout = 23dBm, NF = 3.3dB, RLin > 12dB, RLout > 7.7dB START499 is a product of the START Family (ST Advanced Radio frequency Transistor). Housed in the	Original	AN1541 START499 200mA) 23dBm, OT-343 SC-70) 30mils AN1541	PDF
AN1541 Abstract: START499 L239 3C910 nh060 Text: AN1541 APPLICATION NOTE A MEDIUM POWER AMPLIFIER AT 1.8 GHz USING THE NPN Si START499 TRANSISTOR Data at 1.8 GHz 3V, 200mA Gain = 15dB, P1dBout = 23dBm, NF = 3.3dB, RLin > 12dB, RLout > 7.7dB START499 is a product of the START Family (ST Advanced Radio frequency Transistor). Housed in the	Original	AN1541 START499 200mA) 23dBm, OT-343 SC-70) 30mils AN1541 L239 3C910 nh060	PDF
smd transistor k 1540 Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.	Original	DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js	PDF
transistor SG 14 Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de fense and commercial markets can take advantage of the	OCR Scan	TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR	PDF

TRANSISTOR P1D Search Results

TRANSISTOR P1D Result Highlights (5)

TRANSISTOR P1D Datasheets Context Search

SGA9289Z

Untitled

SGA9289Z

sga9189z

Untitled

Untitled

SGA8543Z-EVB2

Untitled

Transistor TL 31 AC

SiGe POWER TRANSISTOR

SGA-9089Z

SGA9189

MARKING P2Z

b 595 transistor

J231 transistor

AN1541

BPT23E01

BPT23E01

BPT18E01

DRF1601

AN1541

AN1541

smd transistor k 1540

transistor SG 14