AT-42070
Abstract: No abstract text available
Text: Agilent AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42070 is a general purpose NPN bipolar transistor that
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AT-42070
5966-4945E
5989-2654EN
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AT-42035
Abstract: AT42035G AT-42035G
Text: Agilent AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42035 is a general purpose NPN bipolar transistor that
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AT-42035
5988-4734EN
5989-2652EN
AT42035G
AT-42035G
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Untitled
Abstract: No abstract text available
Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that
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AT-42036
5988-4735EN
5989-2653EN
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transistor s11 s12 s21 s22
Abstract: No abstract text available
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
5965-8916E
transistor s11 s12 s21 s22
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AT-64023
Abstract: S21E
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
5965-8916E
S21E
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AT64020
Abstract: AT-64020
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64020
AT-64020
5965-8915E
AT64020
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AT-64020
Abstract: 200 mil BeO package
Text: Agilent AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64020
5965-8915E
5989-2657EN
200 mil BeO package
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Untitled
Abstract: No abstract text available
Text: Agilent AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
5965-8916E
5989-2658EN
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AT-64020
Abstract: S21E
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64020
AT-64020
5965-8915E
S21E
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AT64020
Abstract: AT-64020 S21E
Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64020
AT-64020
AT64020
S21E
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AT-64023
Abstract: S21E
Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
S21E
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AT-42000
Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz
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AT-42000
AT-42000
RN/50
low noise amplifier ghz
AT-42000-GP4
S21E
42000GP4
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AT-42010
Abstract: S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz
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AT-42010
AT-42010
RN/50
S21E
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136.21
Abstract: AT42010 AT-42010 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz
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AT-42010
AT-42010
AT42010
RN/50
5965-8910E
136.21
S21E
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micro-x 420
Abstract: No abstract text available
Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz
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AT-42036
5980-1854E
micro-x 420
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AT-42035
Abstract: No abstract text available
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz
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AT-42035
AT-42035
RN/50
5965-8911E
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BFR92
Abstract: BFR92A BFR92 transistor transistor p2 marking
Text: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,
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BFR92
BFR92A
OT-23
BFR92A
BFR92 transistor
transistor p2 marking
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8909E
Abstract: AT-42000 AT-42000-GP4 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz
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AT-42000
AT-42000
RN/50
5965-8909E
8909E
AT-42000-GP4
S21E
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AT42070
Abstract: AT-42070 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz
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AT-42070
AT-42070
AT42070
RN/50
5965-8912E
5966-4945E
S21E
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AT-42035
Abstract: micro-x 420 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz
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AT-42035
AT-42035
RN/50
5965-8911E
5988-4734EN
micro-x 420
S21E
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Untitled
Abstract: No abstract text available
Text: Agilent AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The
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AT-42086
5965-8914E
5989-2656EN
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2SK2541
Abstract: MEI-1202 MF-1134
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET D EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SK2541
2SK2541
MEI-1202
MF-1134
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2SK1198
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor
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2SK1198
2SK1198
1988M
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FGX591 ISSUE 3 - NOVEMBER 1995_ O_ PARTMARKING DETAILCOMPLEMENTARY TYPE- P1 FCX491 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE UNIT V CBO
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FGX591
FCX491
-500mA,
-100mA*
-100m
FMMT591
-50mA,
f-100M
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