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    TRANSISTOR P1 3 Search Results

    TRANSISTOR P1 3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P1 3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor s11 s12 s21 s22

    Abstract: No abstract text available
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 AT-64023 5965-8916E transistor s11 s12 s21 s22

    AT-64023

    Abstract: S21E
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 AT-64023 5965-8916E S21E

    AT64020

    Abstract: AT-64020
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 AT-64020 5965-8915E AT64020

    AT-64020

    Abstract: S21E
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 AT-64020 5965-8915E S21E

    AT64020

    Abstract: AT-64020 S21E
    Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 AT-64020 AT64020 S21E

    AT-64023

    Abstract: S21E
    Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 AT-64023 S21E

    AT-42000

    Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz


    Original     		PDF AT-42000 AT-42000 RN/50 low noise amplifier ghz AT-42000-GP4 S21E 42000GP4

    AT-42010

    Abstract: S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz


    Original     		PDF AT-42010 AT-42010 RN/50 S21E

    136.21

    Abstract: AT42010 AT-42010 S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz


    Original     		PDF AT-42010 AT-42010 AT42010 RN/50 5965-8910E 136.21 S21E

    micro-x 420

    Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E
    Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz


    Original     		PDF AT-42036 AT-42036 me10/-0 5980-1854E 5988-4735EN micro-x 420 AT-42036-BLK AT-42036-TR1 S21E

    8909E

    Abstract: AT-42000 AT-42000-GP4 S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz


    Original     		PDF AT-42000 AT-42000 RN/50 5965-8909E 8909E AT-42000-GP4 S21E

    AT42070

    Abstract: AT-42070 S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz


    Original     		PDF AT-42070 AT-42070 AT42070 RN/50 5965-8912E 5966-4945E S21E

    AT-42035

    Abstract: S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz


    Original     		PDF AT-42035 AT-42035 RN/50 S21E

    FCX591

    Abstract: FCX491 FMMT591 DSA003685
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FCX591 ✪ C PARTMARKING DETAIL COMPLEMENTARY TYPE - P1 FCX491 E B C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage


    Original     		PDF FCX591 FCX491 -500mA, -50mA* -100mA* -50mA, 100MHz FMMT591 FCX591 FCX491 DSA003685

    gaas fet micro-X Package

    Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 oscillator 77 GHZ atf26836tr1 ATF26836-STR
    Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original     		PDF ATF-26836 ATF-26836 metallizati200 5965-8704E gaas fet micro-X Package ATF-26836-STR ATF-26836-TR1 oscillator 77 GHZ atf26836tr1 ATF26836-STR

    transistor s parameters noise

    Abstract: NPN planar RF transistor 929 marking 23marking
    Text: S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Case 23 A 3 DIN 41869 SOT 23 Marking: P1 Absolute Maximum Ratings


    Original     		PDF D-74025 transistor s parameters noise NPN planar RF transistor 929 marking 23marking

    BFR92R

    Abstract: BFR92 transistor bfr92
    Text: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23


    Original     		PDF BFR92/BFR92R BFR92 BFR92R D-74025 17-Apr-96 transistor bfr92

    2SK2541

    Abstract: MEI-1202 MF-1134
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET D EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


    OCR Scan     		PDF 2SK2541 2SK2541 MEI-1202 MF-1134

    2sj460

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


    OCR Scan     		PDF 2SJ460 2SJ460

    2SJ460

    Abstract: MEI-1202 X10679E
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98 .2 DATA SHEET D EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION


    OCR Scan     		PDF 2SJ460 2SJ460 MEI-1202 X10679E

    Untitled

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


    OCR Scan     		PDF 2SK2541 2SK2541

    2SJ460

    Abstract: MEI-1202
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


    OCR Scan     		PDF 2SJ460 2SJ460 MEI-1202

    C10535* MANUAL NEC

    Abstract: 2SJ461 C10535E MEI-1202
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


    OCR Scan     		PDF 2SJ461 2SJ461 C10535* MANUAL NEC C10535E MEI-1202

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FCX591 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL COMPLEMENTARY TYPE- P1 FCX491 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -80 V VcEO -60 V V A C ollector-E m itter Voltage


    OCR Scan     		PDF FCX591 FCX491 -10mA, -100mA* -100m -500mA, -50mA, 100MHz FMMT591