TRANSISTOR P 10 Search Results

TRANSISTOR P 10 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR P 10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage	Original	MJE13003D-P MJE13003D-P MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K MJE13003DL-P-x-T92-R MJE13003DG-P-xat QW-R201-085	PDF
2N6897 Abstract: No abstract text available Text: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,	Original	2N6897 -100V, -100V 2N6897 2N689opment.	PDF
BP317 Abstract: MS-012AA PHP1035 Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor	Original	PHP1035 SC13b OT96-1 SCA57 135108/00/01/pp8 BP317 MS-012AA PHP1035	PDF
BSH299 Abstract: transistor A1 Text: DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES	Original	BSH299 SC13b OT363 SCA54 135108/00/01/pp12 BSH299 transistor A1	PDF
BP317 Abstract: MS-012AA PHP1025 Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor PHP1025	Original	PHP1025 SC13b OT96-1 SCA57 135108/00/01/pp8 BP317 MS-012AA PHP1025	PDF
field effect transistor Abstract: No abstract text available Text: N And P Channel Enhancement Mode Field Effect Transistor FHK4532 N And P Channel Enhancement Mode Field Effect Transistor DESCRIPTION & FEATURES 概述及特點 Low on-state resistance N-channel：30V, 4.7A, RDS ON = 55mΩ@VGS = 10V. RDS(ON) = 85 mΩ@VGS = 4.5V.	Original	N-channel30V, P-channel-30V, field effect transistor	PDF
2N1046 Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an	OCR Scan	2N1046 DC-11 germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e	PDF
marking 557 SOT143 Abstract: No abstract text available Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor	OCR Scan	BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143	PDF
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF
Untitled Abstract: No abstract text available Text: BF550 _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection application:;. •	OCR Scan	BF550	PDF
transistor 45 f 122 Abstract: BUK416-1000AE K416 K4161 BUK416-1000BE Text: P h ilip s C o m p o n e n ts Data sheet status Prelim inary specification date of issue March 1991 BU K416-10OOAE/BE PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in ISO TO P envelope.	OCR Scan	BUK416-1000AE/BE BUK416 -1000AE -1000BE OT227B 0445M4 transistor 45 f 122 BUK416-1000AE K416 K4161 BUK416-1000BE	PDF
BFG23 Abstract: No abstract text available Text: • bbSBTBl 0017b47 3 ■ N AMER PHILIPS/DISCRETE BFG23 SSE D J V T-3l-i£r P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as MATV and CATV systems, up to 2 GHz.	OCR Scan	0017b47 BFG23 OT-103) BFG91A. BFG23	PDF
transistor 2n Abstract: 3904 Text: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor	OCR Scan	2N3904 15000kHz 500rr transistor 2n 3904	PDF

MPSU60 Abstract: MPS-U60 MPSU10 MPS-U10 MPSU60 transistor HB 541 Text: MPS-U60 SILICON PNP SILICON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR . . . designed for general-purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. • Com plem ent to N P N T y p e M PS-U 10	OCR Scan	MPS-U60 MPS-U10 Tc-25Â MPSU60 MPS-U60 MPSU10 MPS-U10 MPSU60 transistor HB 541	PDF
transistor TIP3055 Abstract: No abstract text available Text: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.	OCR Scan	TIP3055 OT-93 TIP2955. 003302b bbS3T31 00350Efl transistor TIP3055	PDF
BFG51 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.	OCR Scan	bb53l31 Q017b7i BFG51 OT-103) BFG90A. BFG51	PDF
Micropower Amplifiers Abstract: n-channel mos or gate CA3600 TRANSISTOR N2 TRANSISTOR N3 differential pair transistor mos transistor P3N-3 Text: Arrays Transistor-continued COS/MOS Transistor Array - For Linear Circuit Applications c a 36 oo Applications and Features Terminal 1. Channel High input resistance: 100GS2 typ . Lo w gate-terminal curren t: 10 pA (typ .) Matched p-channel p air: Gate-voltage	OCR Scan	ca36oo 100GS2 2300/imho Micropower Amplifiers n-channel mos or gate CA3600 TRANSISTOR N2 TRANSISTOR N3 differential pair transistor mos transistor P3N-3	PDF
L7E transistor Abstract: No abstract text available Text: •I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ]> y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA	OCR Scan	PMBT5401 OT-23 OT-23es L7E transistor	PDF
thyristor firing circuits Abstract: RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A Text: D Arrays Transistor-continued General-Purpose High-Voltage n -p -n /p -n -p Transistor Arrays CA3096 CA 3096A 3 Independent n-p-n Transistoirs/2 Independent p-n-p Transistors D iffe re n tial am p lifie rs • Level sh ifte rs T h y ris t o r firin g circuits	OCR Scan	ca3096 ca3096a CS-23846 16-Liad CA3096> 100/iA, CA3018, CA3018A 120MHz lc-10mA thyristor firing circuits RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A	PDF
bd132 Abstract: transistor ALG 20 Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter	OCR Scan	BD132 OT-32 BD131. bbS3T31 0D34251 BD131 BD132 bb53T31 transistor ALG 20	PDF
TRANSISTOR GB 558 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •	OCR Scan	2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558	PDF
Untitled Abstract: No abstract text available Text: N AUER PH ILI PS/ DI SC RE TE bTE » • bbS3T31 0D30b^5 T H P ro d uc t S p ecificatio n P hilips S em ico nd uc tors BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	bbS3T31 0D30b BUK456-1000B O220AB BUK456-1000IB bbS3T31	PDF
u101b Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)	OCR Scan	uPA101B 14-pin tPA101G u101b	PDF

TRANSISTOR P 10 Search Results

TRANSISTOR P 10 Result Highlights (5)

TRANSISTOR P 10 Datasheets Context Search

Untitled

2N6897

BP317

BSH299

BP317

field effect transistor

2N1046

marking 557 SOT143

mcl610

MCT8 opto

Untitled

transistor 45 f 122

BFG23

transistor 2n

MPSU60

transistor TIP3055

BFG51

Micropower Amplifiers

L7E transistor

thyristor firing circuits

bd132

TRANSISTOR GB 558

Untitled

u101b