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    TRANSISTOR ON 974 Search Results

    TRANSISTOR ON 974 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ON 974 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PHP50N03T

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		PDF O220AB PHP50N03T PHP50N03T

    IRG7PH46UDPBF

    Abstract: 600v 20a IGBT driver igbt 40A 600V P channel 600v 20a IGBT C-150
    Text: PD - 97498 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH46UDPbF IRG7PH46UD-EP O-247AD IRG7PH46UDPBF 600v 20a IGBT driver igbt 40A 600V P channel 600v 20a IGBT C-150

    Untitled

    Abstract: No abstract text available
    Text: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF 7498A IRG7PH46UDPbF IRG7PH46UD-EP O-247AD

    IRG7PH46UDPBF

    Abstract: 028005
    Text: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF 7498A IRG7PH46UDPbF IRG7PH46UD-EP O-247AD 028005

    irg7ph35upbf

    Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
    Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A

    Untitled

    Abstract: No abstract text available
    Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH35UPbF IRG7PH35U-EP O-247AD

    irg7ph35

    Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1
    Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses


    Original     		PDF 7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD irg7ph35 irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1

    Untitled

    Abstract: No abstract text available
    Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses


    Original     		PDF 7480A IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD

    IRG7PH42UD1PBF

    Abstract: IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A
    Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses


    Original     		PDF 7480A IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A

    Untitled

    Abstract: No abstract text available
    Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses


    Original     		PDF 7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD

    IRG7PH42UD1-EP

    Abstract: IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT
    Text: PD - 97480 IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA


    Original     		PDF IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD IRG7PH42UD1-EP IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT

    IRG7PH35UD1PbF

    Abstract: IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v
    Text: PD - 97455 IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA


    Original     		PDF IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD IRG7PH35UD1PbF IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v

    IRGP4069D

    Abstract: irgp4069dpbf
    Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA


    Original     		PDF IRGP4069DPbF IRGP4069D-EPbF O-247AD IRGP4069D irgp4069dpbf

    RR350

    Abstract: S100-200
    Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA


    Original     		PDF IRGP4069DPbF IRGP4069D-EPbF O-247AD RR350 S100-200

    Untitled

    Abstract: No abstract text available
    Text: PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		PDF IRG7PH30K10DPbF O-247AC

    Untitled

    Abstract: No abstract text available
    Text: PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original     		PDF 7406A IRG7PSH73K10PbF IRFPS37N50A Super-247

    IRG7PH30K10D

    Abstract: C-150 IRG7PH30K10 1431tr
    Text: PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		PDF IRG7PH30K10DPbF O-247AC IRG7PH30K10D C-150 IRG7PH30K10 1431tr

    IRGP4069-EPbF

    Abstract: IRGP4069PbF transistor* igbt 70A 300 V
    Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original     		PDF IRGP4069PbF IRGP4069-EPbF O-247AD IRGP4069-EPbF IRGP4069PbF transistor* igbt 70A 300 V

    IRG7PSH73K10

    Abstract: IRG7PSH73K10PBF IRG7PSH73 IRFPS37N50A
    Text: PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • VCES = 1200V C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original     		PDF 7406A IRG7PSH73K10PbF IRFPS37N50A Super-247 IRG7PSH73K10 IRG7PSH73K10PBF IRG7PSH73 IRFPS37N50A

    irgp4063pbf

    Abstract: IRGP4063DPBF IRGP4063
    Text: PD - 97404 IRGP4063PbF IRGP4063-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of the parts tested for ILM 


    Original     		PDF IRGP4063PbF IRGP4063-EPbF O-247AD IRGP4063DPBF IRGP4063

    DSAQ

    Abstract: No abstract text available
    Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original     		PDF IRGP4069PbF IRGP4069-EPbF O-247AD DSAQ

    transistor k 975

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    OCR Scan     		PDF BUK7524-55 T0220AB transistor k 975

    transistor B 974

    Abstract: k 246 transistor fet transistor on 974 TRANSISTOR K 135 J 50
    Text: Philips Semiconductors Product specification Trench MOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance


    OCR Scan     		PDF BUK7575-55 T0220AB transistor B 974 k 246 transistor fet transistor on 974 TRANSISTOR K 135 J 50

    S1401M

    Abstract: transistor k 975
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    OCR Scan     		PDF BUK7524-55 T0220AB S1401M transistor k 975