Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRG7PH35UPBF Search Results

    SF Impression Pixel

    IRG7PH35UPBF Price and Stock

    Rochester Electronics LLC IRG7PH35UPBF

    IGBT W/ULTRAFAST SOFT RECOVERY D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG7PH35UPBF Bulk 3,636 123
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.45
    • 10000 $2.45
    		Buy Now

    Infineon Technologies AG IRG7PH35UPBF

    IGBT 1200V 55A 210W TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG7PH35UPBF Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Americas IRG7PH35UPBF Tube 4 Weeks 148
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.312
    • 10000 $2.193
    		Buy Now

    International Rectifier IRG7PH35UPBF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRG7PH35UPBF 247
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Rochester Electronics IRG7PH35UPBF 3,639 1
    • 1 $2.48
    • 10 $2.48
    • 100 $2.33
    • 1000 $2.11
    • 10000 $2.11
    		Buy Now
    ComSIT USA IRG7PH35UPBF 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IRG7PH35UPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH35UPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 55A 210W TO247AC Original PDF

    IRG7PH35UPBF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irg7ph35upbf

    Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
    Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A

    Untitled

    Abstract: No abstract text available
    Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH35UPbF IRG7PH35U-EP O-247AD

    irg7ph35

    Abstract: IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD
    Text: PD - 97463 IRG7CH35UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching


    Original     		PDF IRG7CH35UB irg7ph35 IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD