Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR NPN 3EM Search Results

    TRANSISTOR NPN 3EM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 3EM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 3em

    Abstract: marking 3EM sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value


    Original     		PDF OT-23 MMBTH10 100MHz transistor 3em marking 3EM sot-23

    transistor marking 3em

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value


    Original     		PDF OT-23 MMBTH10 transistor marking 3em

    BC546

    Abstract: BC547 45V 100mA NPN Transistor bc547 BC548 transistor bc547 BC547 4,5V 100mA NPN Transistor bc547 collector base emitter transistor BC548 of BC547 Transistor Bc547 npn
    Text: BC546 / BC547 / BC548 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC546A 1Collector 2Base 3Emitter


    Original     		PDF BC546 BC547 BC548 BC546A BC546B BC546C BC547A BC547B BC547C BC548A BC547 45V 100mA NPN Transistor BC548 transistor bc547 BC547 4,5V 100mA NPN Transistor bc547 collector base emitter transistor BC548 of BC547 Transistor Bc547 npn

    transistor marking 3em

    Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1 r14525 MMBTH10LT1/D transistor marking 3em MMBTH10LT1 mmbth10 MMBTH10-4LT1

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1

    BC337

    Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
    Text: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J


    Original     		PDF BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25

    transistor marking 3em

    Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
    Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1 MMBTH10LT1/D transistor marking 3em MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2

    mps 1049

    Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1 mps 1049 JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23

    JB marking transistor

    Abstract: transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking
    Text: MMBTH10LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 VHF/UHF Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo


    Original     		PDF MMBTH10LT1 OT-23 100uA 1000MHz JB marking transistor transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking

    3dd13001 TRANSISTOR

    Abstract: 3DD13001
    Text: 3DD13001 3DD13001 TRANSISTOR NPN FEATURES Power dissipation PCM: TO-251 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3EMITTER TJ, Tstg: -55℃ to +150℃


    Original     		PDF 3DD13001 O-251 3dd13001 TRANSISTOR 3DD13001

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6


    Original     		PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G NSVMMBTH10LT1G MMBTH10â 04LT1G MMBTH10LT1/D

    transistor marking code 3EM SOT-23

    Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
    Text: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6


    Original     		PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 NSVMMBTH10 MMBTH10LT1G transistor marking 3em transistor 3em Marking code mps

    marking Specific Device Code Date Code sot-23 4l

    Abstract: transistor 3em
    Text: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original     		PDF MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L AEC-Q101 OT-23 O-236) MMBTH10LT1/D marking Specific Device Code Date Code sot-23 4l transistor 3em

    3DD13001

    Abstract: No abstract text available
    Text: 3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE 1 Product-Rank 3DD13001-A


    Original     		PDF 3DD13001 3DD13001-A 3DD13001-B 19-Aug-2011 3DD13001

    transistor marking JB

    Abstract: MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G
    Text: MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25


    Original     		PDF MMBTH10LT1G, MMBTH10-4LT1G MMBTH10LT1/D transistor marking JB MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G

    transistor marking 3em

    Abstract: MMBTH10LT1
    Text: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF MMBTH10LT1/D MMBTH10LT1 OT-23 O-236AB) DiodesMMBTH10LT1/D transistor marking 3em MMBTH10LT1

    JB marking transistor

    Abstract: transistor marking 3em transistor marking JB MMBTH10 J JB transistor marking 3EM sot-23 C40 SOT23
    Text: MMBTH10 NPN Silicon VHF/UHF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value


    Original     		PDF MMBTH10 OT-23 MMBTH10 OT-23 JB marking transistor transistor marking 3em transistor marking JB J JB transistor marking 3EM sot-23 C40 SOT23

    JB MARKING SOT-23

    Abstract: DELTA fan bfb
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25


    Original     		PDF MMBTH10LT1 OT-23 O-236AB) JB MARKING SOT-23 DELTA fan bfb

    3DD13001

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range


    Original     		PDF O-251 3DD13001 O-251 3DD13001

    transistor marking 3em

    Abstract: 556 ITT MMBTH10 sot-23 Marking YRE
    Text: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the


    Original     		PDF MMBTH10 100mA OT-23 09-Feb-07 OT-23Package transistor marking 3em 556 ITT MMBTH10 sot-23 Marking YRE

    mmbth10

    Abstract: transistor marking 3em TRANSISTOR NPN 3EM
    Text: MMBTH10 50 mA, 30 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free SOT-23 DESCRIPTION The MMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.


    Original     		PDF MMBTH10 OT-23 MMBTH10 0078g 100MHz 01-June-2007 transistor marking 3em TRANSISTOR NPN 3EM

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon VHF/UHF Transistor MMBTH10 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Ideal for Mixer and RF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ● High Current Gain Bandwidth Product 0.4 3 2 +0.1 0.95-0.1


    Original     		PDF MMBTH10 OT-23 100MHz

    3DD13001

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range


    Original     		PDF O-251 3DD13001 O-251 3DD13001

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc VCBO 30 Vdc v EBO 3.0 Vdc C ollector-Em itter Voltage


    OCR Scan     		PDF MMBTH10LT1 OT-23 O-236AB)