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    TRANSISTOR NPN 1A COLLECTOR CURRENT Search Results

    TRANSISTOR NPN 1A COLLECTOR CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 1A COLLECTOR CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor A2

    Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
    Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A


    Original     		PDF ZXTNS618MC 150mV 500mV DS31933 transistor A2 Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A


    Original     		PDF ZXTNS618MC 150mV 500mV DFN3020B-8 DS31933

    5609 transistor

    Abstract: transistor 5609 TRANSISTOR-5609 5609 npn transistor 5609 npn 5609 a/TRANSISTOR-5609
    Text: 5609 YOUDA TRANSISTOR Si NPN TRANSISTOR—5609 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 25V *Collector current up to 1A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF TRANSISTOR--5609 5609 transistor transistor 5609 TRANSISTOR-5609 5609 npn transistor 5609 npn 5609 a/TRANSISTOR-5609

    QS 100 NPN Transistor

    Abstract: KSB564A KSD471A
    Text: KSD471A NPN Epitaxial Silicon Transistor Features • Audio Frequency Power Amplifier • Complement to KSB564A • Collector Current : IC=1A • Collector Power Dissipation : PC=800mW TO-92 1 • Suffix "-C" means Center Collector 1. Emitter 2. Collector 3. Base


    Original     		PDF KSD471A KSB564A 800mW QS 100 NPN Transistor KSB564A KSD471A

    IC 630

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		PDF ZXTC6717MC 100mV -140mV DS31926 IC 630

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		PDF ZXTC6717MC 100mV -140mV DS31926

    Untitled

    Abstract: No abstract text available
    Text: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)


    Original     		PDF TIP112 O-220 QW-R203-022

    UTCTIP112

    Abstract: QW-R203-022
    Text: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)


    Original     		PDF TIP112 R110k, O-220 QW-R203-022 UTCTIP112

    KSB811

    Abstract: KSD1021
    Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KSD1021 KSB811 350mW KSB811 KSD1021

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR


    Original     		PDF 2N6718 2N6718 850mW QW-R201-056 100ms

    IC 630

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


    Original     		PDF ZXTC6719MC 100mV -220mV DS31928 IC 630

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


    Original     		PDF ZXTC6719MC 100mV -220mV DS31928

    2N6718

    Abstract: No abstract text available
    Text: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR


    Original     		PDF 2N6718 2N6718 850mW QW-R201-056

    DFN3020

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A


    Original     		PDF ZXTC6720MC 185mV -220mV DS31929 DFN3020

    2sc2233

    Abstract: Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION •Collector-Emitter Breakdown Voltage:VCEO= 60V Min ·DC Current Gain: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation


    Original     		PDF 2SC2233 500mA; 2sc2233 Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor

    NPN Transistor 1A 400V

    Abstract: NPN Transistor TO220 vcc 150V
    Text: TIP47/48/49/50 NPN SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE VCEO(sus : 250 to 400V) 1A RATED COLLECTOR CURRENT TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage :TIP47 :TIP48 :TIP49 :TIP50 Collector Emitter Voltage : TIP47


    Original     		PDF TIP47/48/49/50 O-220 TIP47 TIP48 TIP49 TIP50 NPN Transistor 1A 400V NPN Transistor TO220 vcc 150V

    2SD2583

    Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS


    Original     		PDF 2SD2583 2SD2583 Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. KSD471C SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER Package: TO-92 *Complementary to KSB564C *Collector Current Ic=1A *Collector Dissipation Pc=800mW ABSOLUTE MAXIMUM RATINGS at Tamb=250C


    Original     		PDF KSD471C KSB564C 800mW 100uA 100mA

    KSB811

    Abstract: KSD1021
    Text: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSD1021 KSB811 350mW O-92S KSB811 KSD1021

    KSB811

    Abstract: No abstract text available
    Text: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSD1021 KSB811 350mW O-92S KSD1021 KSB811

    KSB811

    Abstract: KSD1021
    Text: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSD1021 KSB811 350mW O-92S KSB811 KSD1021

    Untitled

    Abstract: No abstract text available
    Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current tc*1A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATINGS TA=25'C Sym bol C haracteristic Collector-Base Voltage Collector-Em itler Voltage


    OCR Scan     		PDF KSD1021 KSB811 350mW

    mps3569

    Abstract: ebc Transistor
    Text: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MPS3569 MPS3569 O-92A 625mW 150mA 150mA Oct-96 300uS, ebc Transistor

    KSB564A

    Abstract: KSD471A
    Text: KSD471A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB564A • Collector Current Ic = 1A • Collector Dissipation Pc = 800mW JEDEC TO-92 Unit: mm ABSOLUTE MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF KSD471A KSB564A 800mW 100MA, 100mA -10mA KSB564A KSD471A