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    TRANSISTOR NPN 100W AMPLIFIER Search Results

    TRANSISTOR NPN 100W AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 100W AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sc5200

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943  ORDERING INFORMATION Order Number


    Original     		2SC5200 2SA1943 2SC5200-x-T3L-T QW-R214-005, 2sc5200 PDF

    2SD110

    Abstract: npn 100w transistor Ic 1A datasheet NPN transistor npn 100w amplifier
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD110 DESCRIPTION •High Power Dissipation: PC= 100W@TC= 25℃ ·High Current Capability: IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications.


    Original     		2SD110 2SD110 npn 100w transistor Ic 1A datasheet NPN transistor npn 100w amplifier PDF

    Toshiba 2SC3281

    Abstract: 2sc3281 toshiba 2sc3281 transistor 2SC3281 2sc3281 transistor toshiba 2SA1302 TOSHIBA toshiba audio power amplifier Toshiba 2Sa1302 2SA1302 transistor npn 100w amplifier
    Text: TOSHIBA Discrete Semiconductors 2SC3281 Transistor Unit in mm Silicon NPN Triple Diffused Type Power Amplifier Applications Features • Complementary to 2SA1302 • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings Ta = 25°C


    Original     		2SC3281 2SA1302 Toshiba 2SC3281 2sc3281 toshiba 2sc3281 transistor 2SC3281 2sc3281 transistor toshiba 2SA1302 TOSHIBA toshiba audio power amplifier Toshiba 2Sa1302 2SA1302 transistor npn 100w amplifier PDF

    2SC5200L

    Abstract: 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifier circuit 2SC5200 2sc5200 amplifiers 2sc5200 amplifier 2sC5200, 2SA1943 TRANSISTOR 2SC5200 power amplifier 2sc5200 2sa1943 TRANSISTOR transistor npn 100w amplifier
    Text: UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 TO-3PL *Pb-free plating product number: 2SC5200L ABSOLUTE MAXIMUM RATINGS TC = 25℃


    Original     		2SC5200 2SA1943 2SC5200L QW-R214-005 2SC5200L 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifier circuit 2sc5200 amplifiers 2sc5200 amplifier 2sC5200, 2SA1943 TRANSISTOR 2SC5200 power amplifier 2sc5200 2sa1943 TRANSISTOR transistor npn 100w amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AM PLI FI ER APPLI CAT I ON S  FEAT U RES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943  ORDERI N G I N FORM AT I ON


    Original     		2SC5200 2SA1943 2SC5200-x-T3L-T QW-R214-005, PDF

    RF POWER TRANSISTOR NPN mrf317

    Abstract: transistor MRF317 MRF317 transistor npn 100w amplifier mrf317 datasheet ADVANCED POWER TECHNOLOGY EUROPE npn 100w npn 28v 100w amplifier
    Text: MRF317 The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • • • • • • • Guaranteed performance at 150 MHz, 28 Vdc Output power = 100 W


    Original     		MRF317 30-200MHz, carrier/120 RF POWER TRANSISTOR NPN mrf317 transistor MRF317 MRF317 transistor npn 100w amplifier mrf317 datasheet ADVANCED POWER TECHNOLOGY EUROPE npn 100w npn 28v 100w amplifier PDF

    MRF421

    Abstract: transistor npn 100w amplifier CASE-211-11 MRF421 rf amplifier 100w npn 28v 100w amplifier
    Text: MRF421 The RF Line NPN Silicon Power Transistor 100W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • • • Product Image Specified 12.5 V, 30 MHz characteristics —


    Original     		MRF421 30MHz, MRF421 transistor npn 100w amplifier CASE-211-11 MRF421 rf amplifier 100w npn 28v 100w amplifier PDF

    KTC5200

    Abstract: transistor npn 100w amplifier TO-3P KTA1943 transistor npn 100w amplifier TO-3P KTA1943
    Text: SEMICONDUCTOR TECHNICAL DATA KTC5200 TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. FEATURES • Complementary to KTA1943. • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		KTC5200 KTA1943. Tc-25 KTC5200 transistor npn 100w amplifier TO-3P KTA1943 transistor npn 100w amplifier TO-3P KTA1943 PDF

    2sC3281

    Abstract: Toshiba 2SC3281 100W AUDIO ic AMPLIFIER power amplifier 2sc3281 TRANSISTOR transistor 2SC3281
    Text: i TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . Complementary to 2SA1302 . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		2SC3281 2SA1302 Ta-25 VCB-200V, 2sC3281 Toshiba 2SC3281 100W AUDIO ic AMPLIFIER power amplifier 2sc3281 TRANSISTOR transistor 2SC3281 PDF

    2sc5200 toshiba

    Abstract: Toshiba 2SC5200 toshiba 2sc5200 audio power amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2SC5200 2sC5200, 2SA1943 audio amplifier 2SC5200 2-21F1A 2SA1943
    Text: TO SH IBA 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 , 20.5MAX. • • Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. h m y - » f Hbt' "IsL


    OCR Scan     		2SC5200 2SA1943 2sc5200 toshiba Toshiba 2SC5200 toshiba 2sc5200 audio power amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2SC5200 2sC5200, 2SA1943 audio amplifier 2SC5200 2-21F1A 2SA1943 PDF

    power amplifier 2sc5200 2sa1943 TRANSISTOR

    Abstract: 2sC5200, 2SA1943 2sa1943 amplifier 2SC5200 2sc5200 transistor 2-21F1A 2SA1943 2sc5200 toshiba 2SA1943 toshiba
    Text: TO SHIBA 2SC5200 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 Unit in mm PO W ER AM PLIFIER APPLICATIONS , 20.5MAX. t • • ^3.3 ±0.2 ^ - Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.


    OCR Scan     		2SC5200 2SA1943 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sC5200, 2SA1943 2sa1943 amplifier 2SC5200 2sc5200 transistor 2-21F1A 2SA1943 2sc5200 toshiba 2SA1943 toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2SD2155 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in ran . Complementary to 2SB1429 20.5 M A X #3.3 ±0.2 . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		2SD2155 2SB1429 2-21F1A PDF

    power transistor audio amplifier 100w

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2155 Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications F e a tu re s • Complementary to 2SB1429 • Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC


    OCR Scan     		2SD2155 2SB1429 power transistor audio amplifier 100w PDF

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
    Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 53.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 tr 2sA1987 PDF

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 2SC53
    Text: TOSHIBA 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO —230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 2SC53 PDF

    tr 2sc5200

    Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
    Text: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		2SC5200 2SA1943 2-21F1A tr 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 Unit in mm 20.5M AX. • • ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		2SC5200 2SA1943 2-21F1A PDF

    Toshiba 2SC3281

    Abstract: 2sc3281 toshiba 2SC3281 2sc3281 transistor toshiba 2SA1302 TOSHIBA transistor 2SC3281 instrumentation amplifier ic with 1A current 2SC3281 transistor 100-C 2-21F1A
    Text: TO SH IBA TRANSISTOR SEMICONDUCTOR TO SHIBA TECHNICAL 2SC3281 DATA SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 Unit in mm PO W ER AM PLIFIER APPLICATIONS. 20.5M AX. • • 3-3 1 0.2 Complementary to 2SA1302 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC3281 2SA1302 2SC3281 Toshiba 2SC3281 2sc3281 toshiba 2sc3281 transistor toshiba 2SA1302 TOSHIBA transistor 2SC3281 instrumentation amplifier ic with 1A current 2SC3281 transistor 100-C 2-21F1A PDF

    Toshiba 2SC3281

    Abstract: 2sc3281 transistor 2SC3281
    Text: TOSHIBA 2SC3281 Transistor Unit in m m Silicon NPN Triple Diffused Type Power Amplifier Applications Features • Com plem entary to 2SA1302 • R ecom m ended for 100W High Fidelity Audio Frequency Amplifier O utput Stage A bsolute M axim um Ratings Ta = 25 C


    OCR Scan     		2SC3281 2SA1302 Toshiba 2SC3281 2sc3281 transistor 2SC3281 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2155 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE war m mr • vs sa r Unit in mm POWER AMPLIFIER APPLICATIONS 3.3 + 0.2 2Q.5MAX Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier O n fc rm t S fa c rp TT


    OCR Scan     		2SD2155 2SB1429 PDF

    2sc3281 transistor toshiba

    Abstract: 2sc3281
    Text: TOSHIBA Discrete Semiconductors 2SC3281 Transistor U n it in m m Silicon NPN Triple Diffused Type ¡ 0. 5MAX- a .3 ± Q 2 Power Amplifier Applications F e a tu re s • Complementary to 2SA1302 • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage


    OCR Scan     		2SC3281 2SA1302 2sc3281 transistor toshiba 2sc3281 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2155 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 • • Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. j— MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		2SD2155 2SB1429 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 59 U nit in mm 3.3 + 0.2 2Q.5MAX • • • High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 PDF

    2SD2155

    Abstract: 2-21F1A 2SB1429
    Text: TOSHIBA 2SD2155 2 S D 2 1 55 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		2SD2155 2SB1429 2SD2155 2-21F1A PDF