Contextual Info: 2SD2155 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm PO W ER AM PLIFIER APPLICATIONS ¿ ± 3.3 • • 0.2 Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C

2SB1429

Abstract: 2SD2155
Contextual Info: Inchange Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage

Contextual Info: i TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE " « n - M 'M l ZSB14Z9 POWER AMPLIFIER APPLICATIONS. Unit in mm 20.5MAX . Complementary to 2SD2155 f m . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25°C

2SB1429

Contextual Info: 2SB1429 SILICON PNP TRIPLE DIFFUSED TYPE POWER A MPL I F I E R APPLICATIONS. Unit in m m 20.5MAX . C omplementary to 2SD2155 # 3 .3 ±0.2 . R ecommend for 100W H i g h Fiderity A udio F requency Ampl i f i e r Output Stage. 2.5 3.0 +2.5 1 .0 -0 .2 5 MA XI M U M RATINGS Ta~25°C

Contextual Info: 2SD2155 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 • • Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. j— MAXIMUM RATINGS Ta = 25°C

Contextual Info: TOSHIBA Discrete Semiconductors 2SB1429 Transistor U n it in m m Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications F e a tu re s • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage

2SD2155

Abstract: 2SB1429
Contextual Info: SavantIC Semiconductor Product Specification 2SD2155 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1429 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

power transistor audio amplifier 100w

Contextual Info: TOSHIBA 2SD2155 Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications F e a tu re s • Complementary to 2SB1429 • Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2155 P O WE R A M P L I F I E R AP P L I C A T I O N S . Unit in mm . Complementary to 2SB1429 JZJ~3.3±0.2 20.5MAX . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. 3.0 M A XI MU M RATINGS +0.3

Contextual Info: 2SD2155 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm . Complementary to 2SB1429 . . Recommend for 100W High Fiderity Audio Frequency P Amplifier Output Stage. o -H 2.5 3.0 +0.3 1 .0 -0 .2 5 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

2SB1429

Abstract: 2SD2155
Contextual Info: JMnic Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage PINNING

2SD2155

Abstract: 2-21F1A 2SB1429
Contextual Info: TOSHIBA 2SD2155 2 S D 2 1 55 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C

2SD2155

Abstract: transistor npn 100w amplifier 2-21F1A 2SB1429
Contextual Info: T O S H IB A 2SD2155 2 S D 2 1 55 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. 53.3 ±0.2 • Complementary to 2SB1429 • Recommend for 100W High Fidelity Audio Frequency Amplifier 1~Vp| O n f r u it Stacp p

2SB1429

Abstract: 2SD2155 TOSHIBA AUDIO IC 1015
Contextual Info: TOSHIBA Discrete Semiconductors 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA Discrete Semiconductors 2SB1429 Transistor U n it in m m Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications F e a tu re s • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage

Contextual Info: TOSHIBA 2SD2155 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE war m mr • vs sa r Unit in mm POWER AMPLIFIER APPLICATIONS 3.3 + 0.2 2Q.5MAX Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier O n fc rm t S fa c rp TT

2SB1429

Abstract: 2SD2155 100w audio amplifier
Contextual Info: SavantIC Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2155 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

hjr 1

Abstract: transistor qz 2SB1429 2SD2155 100W AUDIO ic AMPLIFIER transistor 7g
Contextual Info: TOSHIBA Discrete Semiconductors 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA Discrete Semiconductors 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C)

2SB1429

Abstract: 2SD2155
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1429 DESCRIPTION •High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Complement to Type 2SD2155 APPLICATIONS ·Power amplifier applications

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2sd1878

Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
Contextual Info: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö

STK411-230E

Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811