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    TRANSISTOR NEC B 617 Search Results

    TRANSISTOR NEC B 617 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NEC B 617 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 14 tv diagram

    Abstract: circuit diagram of line follower robot pre-amp application note PC1675G uhf amp circuit diagrams uPC1685 NEC TUNER ICs A/M29F010B(45/70/90/MT352/CG/UPC1685
    Text: Application Note Usage of 5V Frequency Down-Converter ICs µPC1685/1686/1687 Document No. P11063EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1996, 1999 [MEMO] 2 Application Note P11063EJ2V0AN00 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		PDF PC1685/1686/1687 P11063EJ2V0AN00 peripher88-6130 nec 14 tv diagram circuit diagram of line follower robot pre-amp application note PC1675G uhf amp circuit diagrams uPC1685 NEC TUNER ICs A/M29F010B(45/70/90/MT352/CG/UPC1685

    induction cooker fault finding diagrams

    Abstract: induction cooker schematic diagram EDS SHIELD DOMESTIC GAS DETECTOR schematic diagram induction cooker 3 gun sound generator UM 3562 NEC plasma tv schematic diagram ultrasonic flaw detector LS 2027 Final Audio LS 2027 audio Ultrasonic humidifier circuit
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF C12769EJ2V0IF induction cooker fault finding diagrams induction cooker schematic diagram EDS SHIELD DOMESTIC GAS DETECTOR schematic diagram induction cooker 3 gun sound generator UM 3562 NEC plasma tv schematic diagram ultrasonic flaw detector LS 2027 Final Audio LS 2027 audio Ultrasonic humidifier circuit

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    transistor NEC D 587

    Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage


    Original     		PDF 2SC4885 transistor NEC D 587 transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586

    NEC 1357

    Abstract: LA 8873 TRANSISTOR C 4460
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan     		PDF 2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


    OCR Scan     		PDF 2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    transistor 2sc 1586

    Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		PDF 2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor

    transistor NEC B 617

    Abstract: nec. 5.5 473
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		PDF 2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473

    1.4464

    Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S


    OCR Scan     		PDF 2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473

    3563 1231

    Abstract: transistor NEC B 617 nec d 1590
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain


    OCR Scan     		PDF 2SC5015 2SC5015-T1 2SC5015-T2 3563 1231 transistor NEC B 617 nec d 1590

    613 GB 123 CT

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S


    OCR Scan     		PDF uPA812T 2SC4227) /xPA812T 613 GB 123 CT

    transistor f422 equivalent

    Abstract: transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641
    Text: NEC CB-C9 Family Design Manual June 1996 Document No. A10927EU1V0UM00 Copyright 1996 NEC Electronics Inc. All Rights Reserved b 4 Ë 75 E 5 0063Û Û1 7 b l NEC CB-C9 Family Design Manual Document Number A10927EU1V0UM00 Revision History Preliminary Release On-Line - June 1996


    OCR Scan     		PDF A10927EU1V0UM00 A11040XEU1V0UM00 b427525 G064122 transistor f422 equivalent transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5015 2SC5015-T1 2SC5015-T2

    928 606 402 00

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan     		PDF 2SC5008 2SC5008 928 606 402 00

    3692 nec

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET IV IF f / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its


    OCR Scan     		PDF NE4210M01 NE4210M01 200/im NE4210M01-T1 3692 nec

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    nec 11

    Abstract: No abstract text available
    Text: jW /X V * W M -J W NEC E lectronics Inc. Description #iPD424101 4,194,304 X 1-Bit Dynamic CMOS RAM Pin Configurations The pPD424101 is a nibble mode dynamic RAM orga­ nized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced


    OCR Scan     		PDF uPD424101 pPD424101 flPD424101 jLfPD424101 pPD424101 fiPD424101 fjPD424101 juPD424101 JJPD424101 nec 11

    NE32584C-T1

    Abstract: nec 3435 transistor am 4428
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.


    OCR Scan     		PDF NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428

    2SC 968 NPN Transistor

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5007 2SC 968 NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010