ZXTN5551FL
Abstract: TS16949 ZXTP5401FL
Text: ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features • 160V rating
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ZXTN5551FL
600mA
330mW
ZXTP5401FL
ZXTN5551FLTA
D-81541
ZXTN5551FL
TS16949
ZXTP5401FL
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ZXTN5551Z
Abstract: TS16949 ZXTP5401Z ZXTN5551ZTA
Text: ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating
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ZXTN5551Z
600mA
ZXTP5401Z
ZXTN5551ZTA
D-81541
ZXTN5551Z
TS16949
ZXTP5401Z
ZXTN5551ZTA
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package
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DXT5551
ZXTN5551Z
600mA
ZXTP5401Z
ZXTN5551ZTA
ZXTN555
D-81541
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HOA0875-N51
Abstract: HOA087X SDP8406 SEP8506
Text: Datasheet - HOA0875-N51 HOA0875-N51 HOA Series Infrared Opaque Sensor, Transistor Output, No Mounting Tab, Plastic Package Features ● Representative photograph, actual product appearance may vary. ● ● ● ● Due to regional agency approval requirements, some
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HOA0875-N51
HOA086X/087X
20and
20Settings/rabab/Desktop/Datasheet
20HOA0875-N51
HOA0875-N51
HOA087X
SDP8406
SEP8506
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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STC5551F
Abstract: No abstract text available
Text: ㅊ 9+ STC5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.)
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STC5551F
STC5551F
OT-89
KSD-T5B012-000
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STC5551
Abstract: ON semiconductor N51 transistor N51
Text: STC5551F Semiconductor NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier 4 • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.)
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STC5551F
OT-89
KSD-T5B012-002
STC5551
ON semiconductor N51
transistor N51
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STC5551
Abstract: STC555
Text: STC5551F NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) SOT-89
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STC5551F
OT-89
KSD-T5B012-003
STC5551
STC555
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KSD-T5B012-001
Abstract: No abstract text available
Text: STC5551F Semiconductor NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier • High voltage application 4 Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.)
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STC5551F
OT-89
KSD-T5B012-001
KSD-T5B012-001
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Untitled
Abstract: No abstract text available
Text: STC5551F NPN Silicon Transistor PIN Connection Descriptions • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCBO = 180V, VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.)
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STC5551F
OT-89
KSD-T5B012-003
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CM12A
Abstract: br 2222 npn ZX5T651F
Text: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS
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ZX5T651F
ZX5T651FTA
CM12A
br 2222 npn
ZX5T651F
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HOA6970-N51
Abstract: HOA6970
Text: HOA6970-N51 Page 1 HOME ABOUT US Search narrow your search Products Controls Monitoring and Lighting 352 Machine Safety (1702) Sensors (6223) Switches (9750) Wireless (21) Technology Capacitive (26) Electromechanica l (9301) Microstructure KEY INDUSTRIES SERVED
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HOA6970-N51
HOA6970-N51
HOA096X/HOA097X
id/140301/la
id/152592
HOA6970
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HOA6963-N51
Abstract: No abstract text available
Text: HOA6963-N51 Page 1 HOME ABOUT US Search narrow your search Products Controls Monitoring and Lighting 352 Machine Safety (1702) Sensors (6223) Switches (9750) Wireless (21) Technology Capacitive (26) Electromechanica l (9301) Microstructure KEY INDUSTRIES SERVED
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HOA6963-N51
HOA6963-N51
HOA096X/HOA097X
id/140301/la
id/152584
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Untitled
Abstract: No abstract text available
Text: Product Page Page 1 HOME ABOUT US KEY INDUSTRIES SERVED PRODUCTS & INFORMATION NEWS & EVENTS HOA6972-N51 Optoschmitt Sensors Transmissive (Home : Products) Search narrow your search SALES & SUPPORT LOGIN contacts Customer Service Technical Support Products
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HOA6972-N51
HOA096X/HOA097X
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HOA0971-N51
Abstract: HOA096X HOA097X SDP8600 SEP8506
Text: HOA0971-N51 HOA Series Infrared Opaque Optoschmitt Sensor, Diode Output, No Mounting Tab, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● ● Due to regional agency approval requirements, some products may not be
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HOA0971-N51
HOA096X/097X
HOA0971-N51
HOA096X
HOA097X
SDP8600
SEP8506
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HOA0961-N51
Abstract: 097X HOA096X HOA097X SDP8600 SEP8506 hoa0961 U.S. Sensor
Text: Datasheet - HOA0961-N51 HOA0961-N51 HOA Series Infrared Transmissive Optoschmitt Sensor, Diode Output, No Mounting Tab, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● ● Due to regional agency approval
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HOA0961-N51
HOA096X/097X
20and
20Settings/rabab/Desktop/Datasheet
20HOA0961-N51
HOA0961-N51
097X
HOA096X
HOA097X
SDP8600
SEP8506
hoa0961
U.S. Sensor
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HOA0971-N51
Abstract: HOA0971 HOA096X HOA097X SDP8600 SEP8506
Text: Datasheet - HOA0971-N51 HOA0971-N51 HOA Series Infrared Opaque Optoschmitt Sensor, Diode Output, No Mounting Tab, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● ● Due to regional agency approval
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HOA0971-N51
HOA096X/097X
20and
20Settings/rabab/Desktop/Datasheet
20HOA0971-N51
HOA0971-N51
HOA0971
HOA096X
HOA097X
SDP8600
SEP8506
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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2N5190
Abstract: No abstract text available
Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. • ESD Ratings: Machine Model, C; > 400 V • • http://onsemi.com Human Body Model, 3B; > 8000 V
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2N5190,
2N5191,
2N5192
2N5194,
2N5195.
2N5190
2N5191
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Untitled
Abstract: No abstract text available
Text: rz7 SGS-m 0MS0N Ä T# 2N5191 [MO gfô l[L[iera®*S 2 N5192 MEDIUM POWER NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32
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2N5191
N5192
2N5192
OT-32
2N5192
2N5195.
2N5191
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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Mosfet T460
Abstract: T460 mosfet c947 transistor transistor sb 772 C947 8028 ae 2SK2409 2SK240 tea 1020 SB 772
Text: 7*— *$? • i s — h M O S * IM & * M O S f e t MOS Field Effect Transistor 2SK2409 N51-V ^ ; u /\0|7 -M O S F E T ^ 'f > y >7 X Ü Æ 2 S K 2 4 0 9 ÌN ^ * J U ÌÉ M m ° 7 -M O S F E T T , t * u, y o * =l x - * < 7 * > 4.5 ± 0.2 10.0 ± 0.3 # «
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2SK2409
N51-V
IEI-620)
MP-45F
O-220)
Mosfet T460
T460 mosfet
c947 transistor
transistor sb 772
C947
8028 ae
2SK2409
2SK240
tea 1020
SB 772
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2N34A
2N43A
2N44A
2N59A
2N59B
2N59C
2N60A
2N60B
2N60C
2N61A
N1702
2N277
2SA63
2N390A
L204A
2N408
TFK 940
OC59
2N374
2n1922
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OPB861N
Abstract: OPB861N51 OPB861N55 transistor TIP 320
Text: E *Q SLOTTED OPTICAL SWITCH OPTOELECTRONICS O PB 861 N51/OPB 861 N55 PACKAGE DIMENSIONS DESCRIPTION Th e O PB 861N series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN
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OPB861N51/OPB861N55
OPB861N
OPB861N51
OPB861N55
transistor TIP 320
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