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    TRANSISTOR N3 SOT Search Results

    TRANSISTOR N3 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR N3 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHDTC114EUGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC114EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. SC-70/SOT-323


    Original     		PDF CHDTC114EUGP SC-70/SOT-323 SC-70/SOT-323) 100OC -40OC 50m100m CHDTC114EUGP

    N3 smd transistor

    Abstract: smd transistor marking n3 smd transistor n2 smd n4 2SC1653 TRANSISTOR N3 SMD transistor 23 N3 smd transistor sot 23 N2 transistor smd transistor SMD N3
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1653 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High voltage VCEO : 130V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ. VCE=3.0V,IC=15mA 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SC1653 OT-23 N3 smd transistor smd transistor marking n3 smd transistor n2 smd n4 2SC1653 TRANSISTOR N3 SMD transistor 23 N3 smd transistor sot 23 N2 transistor smd transistor SMD N3

    RS468

    Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
    Text: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive


    Original     		PDF O-220 O-243 OT-89) OT-23 RS468 transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23

    N3 marking sot-323

    Abstract: transistor marking code N3 sot-323 LDTC114EWT1G transistor N3 SOT ua 323
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC114EWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


    Original     		PDF LDTC114EWT1G N3 marking sot-323 transistor marking code N3 sot-323 LDTC114EWT1G transistor N3 SOT ua 323

    Untitled

    Abstract: No abstract text available
    Text: LR745 High-Input Voltage SMPS Start-up Features Description • Accepts inputs from 35 to 450V • Output current limiting • For PWM ICs with start-up threshold voltage of 13.9 - 18.0V • Very low power consumption after start-up LR745 is a high input voltage SMPS start-up circuit.


    Original     		PDF LR745 LR745 240VAC DS20005394A-page

    T flip flop IC

    Abstract: T flip flop IC no uc3844 transformer uc3844 transformer design
    Text: LR745 High Input Voltage SMPS Start-up Features General Description ► Accepts inputs from 35V to 450V ► Output current limiting ► For PWM ICs with start-up threshold voltage of 13.9 - 18.0V ► Very low power consumption after start-up The Supertex LR745 is a high input voltage SMPS startup circuit. The LR745 is ideally suited for use with industry


    Original     		PDF LR745 240VAC DSPD-3TO92N3, D070808. LR745 O-243AA OT-89) T flip flop IC T flip flop IC no uc3844 transformer uc3844 transformer design

    computer smps circuit diagram

    Abstract: uc3844 transformer design uc3844 smps power supply T flip flop IC 24 volts smps uc3844 reference smps smps 12 volt LR745N3 SMPS CIRCUIT DIAGRAM USING TRANSISTORS smps 12v to 16v
    Text: LR745 High Input Voltage SMPS Start-up Features General Description ► Accepts inputs from 35V to 450V ► Output current limiting ► For PWM ICs with start-up threshold voltage of 13.9 - 18.0V ► Very low power consumption after start-up The Supertex LR745 is a high input voltage SMPS startup circuit. The LR745 is ideally suited for use with industry


    Original     		PDF LR745 LR745 240VAC DSFP-LR745 B123008 computer smps circuit diagram uc3844 transformer design uc3844 smps power supply T flip flop IC 24 volts smps uc3844 reference smps smps 12 volt LR745N3 SMPS CIRCUIT DIAGRAM USING TRANSISTORS smps 12v to 16v

    uc3844 transformer design

    Abstract: uc3844 reference smps B0912 T flip flop IC uc3844 transformer UC3844 application LR745
    Text: LR745 High Input Voltage SMPS Start-up Features General Description ► Accepts inputs from 35V to 450V ► Output current limiting ► For PWM ICs with start-up threshold voltage of 13.9 - 18.0V ► Very low power consumption after start-up The Supertex LR745 is a high input voltage SMPS startup circuit. The LR745 is ideally suited for use with industry


    Original     		PDF LR745 240VAC DSFP-LR745 B091208 uc3844 transformer design uc3844 reference smps B0912 T flip flop IC uc3844 transformer UC3844 application

    bfq136

    Abstract: SOT122
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ136 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ136 PINNING NPN transistor in a four-lead


    Original     		PDF BFQ136 OT122A bfq136 SOT122

    BTN6517N3

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTN6517N3 Features • High Breakdown Voltage:BVCEO≥350V • Complementary to BTP6520N3 Symbol BTN6517N3 SOT-23


    Original     		PDF C231N3 BTN6517N3 BVCEO350V BTP6520N3 OT-23 UL94V-0 BTN6517N3

    BTA1722N3

    Abstract: BTC4062N3 marking code SOT-23 2Z
    Text: CYStech Electronics Corp. Spec. No. : C321N3R Issued Date : 2003.04.12 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1722N3 Features • High Breakdown Voltage:BVCEO≥-350V • Complementary to BTC4062N3 Symbol BTA1722N3 SOT-23


    Original     		PDF C321N3R BTA1722N3 BVCEO-350V BTC4062N3 OT-23 UL94V-0 BTA1722N3 BTC4062N3 marking code SOT-23 2Z

    BTN3904N3

    Abstract: BTP3906N3
    Text: CYStech Electronics Corp. Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2005.01.12 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP3906N3 Description • Complementary to BTN3904N3. Symbol Outline BTP3906N3 SOT-23 B：Base


    Original     		PDF C318N3-H BTP3906N3 BTN3904N3. OT-23 UL94V-0 BTN3904N3 BTP3906N3

    marking code SOT-23 2Z

    Abstract: BTN6517N3 2Z SOT23 pnp transistor 350v sot23
    Text: CYStech Electronics Corp. Spec. No. : C321N3 Issued Date : 2003.04.12 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTP6520N3 Features • High Breakdown Voltage:BVCEO≥-350V • Complementary to BTN6517N3 Symbol BTP6520N3 SOT-23


    Original     		PDF C321N3 BTP6520N3 BVCEO-350V BTN6517N3 OT-23 UL94V-0 marking code SOT-23 2Z BTN6517N3 2Z SOT23 pnp transistor 350v sot23

    MARKING CODE 618 SOT23

    Abstract: No abstract text available
    Text: MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS 2.0 AMPS NPN TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 Vdc


    Original     		PDF MMBT489LT1 0E-01 0E-02 0E-03 1E-05 MARKING CODE 618 SOT23

    smd TRANSISTOR sot-23 a7

    Abstract: 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886
    Text: Version 1.0 , September 2004 Application Note AN-CoolMOS-09 200W SMPS Demonstration Board II Author: Marko Scherf, Wolfgang Frank Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board II


    Original     		PDF AN-CoolMOS-09 TDA16888, 1X20/90I smd TRANSISTOR sot-23 a7 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886

    BFR94

    Abstract: NF751 BFR94A Ferroxcube cross reference
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR94A NPN 3.5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor DESCRIPTION BFR94A PINNING


    Original     		PDF BFR94A OT122E MBB904 BFR94 NF751 BFR94A Ferroxcube cross reference

    UHF TRANSISTOR

    Abstract: transistor rf m 1104 BLW90
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the


    Original     		PDF BLW90 UHF TRANSISTOR transistor rf m 1104 BLW90

    V 904 RL 805

    Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures


    OCR Scan     		PDF BFG520W BFG520W/X; BFG520W/XR OT343 OT343R BFG520W/X BFG520W/XR 7110fli V 904 RL 805 N4 TAM transistor fp 1016 DIN45004B

    stk audio power amplifiers

    Abstract: D556 stk 80 w
    Text: TTETSa? rZ J m 7# DD 4L .0 47 b44 • SGTH S G S -T H O M S O N [ » ^ » [IC T IiM O Û S STK 4 N3 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N30L . ■ . . ■ V dss RDS(on Id 300 V < 1 .4 Q 4 .2 A TYPICAL RDS(on) = 1.25 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STK4N30L OT-82 OT-194 7TST237 G04b0S3 stk audio power amplifiers D556 stk 80 w

    FCX649

    Abstract: FCX749 lem lc 300
    Text: FCX649 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FE A T U R E S * * F A S T SW ITCH IN G . LOW S A T U R A TIO N V O LTA G E . * * H fe UP TO 6A PU LSED . 2 A lc CO N TIN U O U S. * CO M P LEM EN TA R Y T YP E - FCX749. PAR TM A R KIN G D E TA ILS - N3


    OCR Scan     		PDF FCX649 FCX749. 100mA 200mA 100mA, 100MHz 500mA, FCX649 FCX749 lem lc 300

    b0724

    Abstract: B0719 BD722 transistor bu 311 B0720 BD724 BD440 BD719 BD720 BD726
    Text: BD720 BD722 BD724 BD726 PHILIPS INTERNATIONAL SLE D • 7110fl2ti 0043004 Ô3T M P H I N T - 3 J - 11 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and


    OCR Scan     		PDF BD720 BD722 BD724 BD726 711002b BD440. BD719; BD724. b0724 B0719 transistor bu 311 B0720 BD440 BD719 BD726

    YL2 sot23

    Abstract: bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ, 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.


    OCR Scan     		PDF BF547 bas500 YL2 sot23 bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412

    SOT-23 marking AFE

    Abstract: marking code AFE CE040
    Text: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinCtonfigu ration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Values Unit


    OCR Scan     		PDF Q6800-A6477 OT-23 SOT-23 marking AFE marking code AFE CE040

    MI44

    Abstract: ML4411
    Text: May 1$97 % R f i c r D lin e a r ML4411/ML4411A Sensorless Spindle Motor Controller GENERAL DESCRIPTION The ML4411 provides complete commutation for delta or wye wound Brushless DC BLDC motors without the need for signals from Hall Effect Sensors. This IC senses


    OCR Scan     		PDF ML4411/ML4411A ML4411 ML4410 ML4411 ML4411CS ML4411ACS 28-Pin MI44