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    TRANSISTOR MTP3055E Search Results

    TRANSISTOR MTP3055E Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MTP3055E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ10009

    Abstract: 1N4937 2N3762 MTP3055E
    Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,


    Original     		PDF MJ10009 MJ10009 r14525 MJ10009/D 1N4937 2N3762 MTP3055E

    D45H11 equivalent replacement

    Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS


    Original     		PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100

    transistor mtp3055e

    Abstract: 1N4937 2N3762 MJ10009 MTP3055E mtp3055
    Text: MOTOROLA Order this document by MJ10009/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ10009*  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON


    Original     		PDF MJ10009/D* MJ10009/D transistor mtp3055e 1N4937 2N3762 MJ10009 MTP3055E mtp3055

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    mgb20n40cl

    Abstract: MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530
    Text: Example of exceptions: MTD/MTP3055E Example of exceptions: MTD/MTP2955E CHANNEL POLARITY, N OR P VOLTAGE RATING DIVIDED BY 10 OPTIONAL SUFFIX: L FOR LOGIC LEVEL E FOR ENERGY RATED T4 FOR TAPE & REEL DPAK/D2PAK RL FOR TAPE & REEL (DPAK/D3PAK) HD FOR HIGH CELL DENSITY


    Original     		PDF MTD/MTP3055E MTD/MTP2955E MTP75N06HD O-220 O-220 O-247 O-264 OT-227B MMSF4P01HDR1 SG265/D mgb20n40cl MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


    Original     		PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    MJ11016 equivalent

    Abstract: DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS MJF16206 high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* MJ11016 equivalent DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100

    2N5337

    Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    1811P3C8

    Abstract: 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 1811P3C8 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    MAX770 equivalent

    Abstract: MAX771 MAX770 MAX770CPA MAX772 MAX773 MAX770CSA MAX771MJA max7702 max773cpd
    Text: 19-0202; Rev 2; 11/96 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 5V/12V/15V or Adjustable, High-Efficiency, Low IQ, Step-Up DC-DC Controllers _Applications Palmtops/Handy-Terminals High-Efficiency DC-DC Converters Battery-Powered Applications


    Original     		PDF V/12V/15V MAX770/MAX771/MAX772) MAX773) MAX770: MAX771: MAX772: MAX773: 200mm) 032mm) MAX773 MAX770 equivalent MAX771 MAX770 MAX770CPA MAX772 MAX773 MAX770CSA MAX771MJA max7702 max773cpd

    MAX771

    Abstract: MAX773 MAX770 MAX770CPA MAX772 MAX770CSA 2n2222A graphs
    Text: 19-0202; Rev 2; 11/96 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 5V/12V/15V or Adjustable, High-Efficiency, Low IQ, Step-Up DC-DC Controllers _Applications Palmtops/Handy-Terminals High-Efficiency DC-DC Converters Battery-Powered Applications


    Original     		PDF V/12V/15V MAX770/MAX771/MAX772) MAX773) MAX770: MAX771: MAX772: MAX773: 200mm) 032mm) MAX773 MAX771 MAX773 MAX770 MAX770CPA MAX772 MAX770CSA 2n2222A graphs

    motorola transistor 2N2907A

    Abstract: POT 100K preset LXF Series 2N2222A plastic package dc-dc converter 12v to 5v 3a ferrite pot core 2N2222A zetex 2n2222A graphs 2N2222A motorola max756 for .7v to 5v
    Text: 19-0202; Rev 1; 7/96 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO 5V/12V/15V or Adjustable, High-Efficiency, Low IQ, Step-Up DC-DC Controllers _Applications Palmtops/Handy-Terminals High-Efficiency DC-DC Converters Battery-Powered Applications


    Original     		PDF V/12V/15V MAX770/MAX771/MAX772) MAX773) MAX770: MAX771: MAX772: MAX773: 200mm) 032mm) MAX773 motorola transistor 2N2907A POT 100K preset LXF Series 2N2222A plastic package dc-dc converter 12v to 5v 3a ferrite pot core 2N2222A zetex 2n2222A graphs 2N2222A motorola max756 for .7v to 5v

    3055EL

    Abstract: 636 MOSFET TRANSISTOR 3055E AN636 APP636 NDS9435 RFD14N05L Si9410DY Si9433DY Si9434DY
    Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: Reverse-Current Circuitry Protection Jan 31, 2001 APPLICATION NOTE 636 Reverse-Current Circuitry Protection Battery reversal can be fatal to portable equipment. However, numerous circuits can protect against the


    Original     		PDF 100msec com/an636 AN636, APP636, Appnote636, 3055EL 636 MOSFET TRANSISTOR 3055E AN636 APP636 NDS9435 RFD14N05L Si9410DY Si9433DY Si9434DY

    Samsung Tantalum Capacitor

    Abstract: MTP3055EL TC110X CAPACITOR 47uF/16V IN5817 torroidal core inductor Si941 2030 ic 5 pins Si9410DY TC110301ECT
    Text: TC110 PFM/PWM Step-Up DC/DC Controller FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC110 is a step-up Boost switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency of 84%. The TC110 normally operates in


    Original     		PDF TC110 TC110 OT-23A DS21355A TC110-2 Samsung Tantalum Capacitor MTP3055EL TC110X CAPACITOR 47uF/16V IN5817 torroidal core inductor Si941 2030 ic 5 pins Si9410DY TC110301ECT

    tp3055

    Abstract: TP3055E
    Text: Order this data sheet by MTP3055E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TP3055E TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor This advanced "E " series o f TMOS power MOSFETs is designed to w ithstand high energy in the avalanche and


    OCR Scan     		PDF MTP3055E/D MK145BP, C57092 MTP3055E tp3055 TP3055E

    transistor mtp3055e

    Abstract: MTP3055E-MOTOROLA T1N2 221A-06 AN569 MTP3055 MTP3055E
    Text: M OT O R O L A SC X S T R S / R F b 3 b 7 E S 4 ODTflflEl 5 ^ b&E D n o T b MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MTP3055E T M O S IV N-Channel Enhancem ent-Mode Motorola Preferred Device Pow er Field Effect Transistor This advanced " E " series of T M O S power M O S F E T s is


    OCR Scan     		PDF MTP3055E transistor mtp3055e MTP3055E-MOTOROLA T1N2 221A-06 AN569 MTP3055 MTP3055E

    MTP2955

    Abstract: TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel
    Text: b 3 b ? 2 S 4 DO'iflfllb 121 • MOTb M O T O R O L A SC C X S T R S / R F MOTOROLA H SEM ICONDUCTO R TECHNICAL DATA M T P 2955 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS on) = 0.3 OHM


    OCR Scan     		PDF MTP3055E MTP2955 b3b7254 MTP2955 TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel

    TP3055E

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Advance Inform ation TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor This advanced " E " series o f TM O S p o w e r MOSFETs is designed to w ith s ta n d hig h ene rg y in th e avalanche and c o m m u ta tio n m odes. These n ew ene rg y e fficie n t devices


    OCR Scan     		PDF MTP3055E TP3055E

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor, Inc. PFM/PWM STEP-UP DC/DC CONTROLLER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC110 is a step-up Boost switching controller that furnishes output currents as high as 300 mA while delivering


    OCR Scan     		PDF TC110 OT23-5 TC110 100KHZ 300KHZ TC110-1 TC110-1

    tc110501

    Abstract: TC110501ECT TC110503ECT
    Text: V TT elC om Semiconductor, Inc. TC110 PFM/PWM STEP-UP DC/DC CONTROLLER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC110 is a step-up Boost switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency of 84%. The TC110 normally operates in


    OCR Scan     		PDF TC110 OT-23-5 100KHZ) 300mA 9410DY MTP3055EL MTD20N03 ZTX694B tc110501 TC110501ECT TC110503ECT

    icom sc 1025

    Abstract: No abstract text available
    Text: Semiconductor, Inc. TC110 PFM/PWM STEP-UP DC/DC CONTROLLER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ T h e T C 1 10 is a step-up Boost switching controller that furnishes output currents as high as 300 mA while delivering


    OCR Scan     		PDF TC110 TC110-2 300KHz, D-82152 icom sc 1025

    TC1102

    Abstract: tc110501 JML LOW ESR
    Text: Semiconductor, Inc. TC110 PFM/PWM STEP-UP DC/DC CONTROLLER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC110 is a step-up Boost switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency of 84%. The TC110 normally operates in


    OCR Scan     		PDF TC110 OT-23A TC110-2 TC110 TC110-2 D-82152 TC1102 tc110501 JML LOW ESR