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    MTP3055 Price and Stock

    onsemi MTP3055V

    MOSFET N-CH 60V 12A TO220AB
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    DigiKey MTP3055V Tube
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    Bristol Electronics MTP3055V 17,140 4
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    MTP3055V 78
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    Quest Components MTP3055V 13,712
    • 1 $1.75
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    MTP3055V 40
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    MTP3055V 210
    • 1 $1.9
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    onsemi MTP3055VL

    MOSFET N-CH 60V 12A TO220-3
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    DigiKey MTP3055VL Tube 1
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    Avnet Americas MTP3055VL Bulk 7 Weeks, 5 Days 1
    • 1 $1.6
    • 10 $1.34
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    MTP3055VL Tube 12 Weeks 50
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    Mouser Electronics MTP3055VL
    • 1 $1.5
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    Bristol Electronics MTP3055VL 10
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    Rochester Electronics MTP3055VL 35 1
    • 1 $0.7319
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    Richardson RFPD MTP3055VL 1,600
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    STMicroelectronics MTP3055

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    Bristol Electronics MTP3055 21
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    Fairchild Semiconductor Corporation MTP3055E

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    Bristol Electronics MTP3055E 1,069
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    Motorola Semiconductor Products MTP3055E

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    Bristol Electronics MTP3055E 322
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    Quest Components MTP3055E 45
    • 1 $0.708
    • 10 $0.59
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    MTP3055E 130
    • 1 $1.18
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    Find more MTP3055 price and stock on Findchips.com

    MTP3055 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTP3055 Motorola TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM Original PDF
    MTP3055 STMicroelectronics N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET Original PDF
    MTP3055A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP3055A STMicroelectronics Shortform Data Book 1988 Scan PDF
    MTP3055AFI Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    MTP3055AFI STMicroelectronics Shortform Data Book 1988 Scan PDF
    MTP3055AP Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    MTP3055E STMicroelectronics N - CHANNEL 60V - 0.1W - 12A -TO-220 STripFET] POWER MOSFET Original PDF
    MTP3055E STMicroelectronics N-Channel 60 V - 0.1 ohm -12 A TO-220 STripFET Power MOSFET Original PDF
    MTP3055E STMicroelectronics N - CHANNEL 60V - 0.1W - 12A TO-220 STripFET] MOSFET Original PDF
    MTP3055E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP3055E Motorola N-channel TMOS power FET. 60 V, 12 A, Rds(on) 0.15 Ohm. Scan PDF
    MTP3055E Motorola Switchmode Datasheet Scan PDF
    MTP3055E Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    MTP3055E Unknown FET Data Book Scan PDF
    MTP3055E Unknown Shortform Datasheet & Cross References Data Scan PDF
    MTP3055EFI Unknown Shortform Datasheet & Cross References Data Scan PDF
    MTP3055EL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP3055EL Motorola N-channel TMOS power FET logic level. 60 V, 12 A, Rds(on) 0.18 Ohm. Scan PDF
    MTP3055EL Motorola Switchmode Datasheet Scan PDF

    MTP3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTP3055EFI

    Abstract: MTP3055E
    Text: MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E MTP3055EFI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.15 Ω < 0.15 Ω 14 A 10 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF MTP3055E MTP3055EFI 100oC 175oC O-220 ISOWATT220 MTP3055EFI MTP3055E

    Untitled

    Abstract: No abstract text available
    Text: , On&. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP3055E N-CHANNEL 60V-0.1Q-12A TO-220 STripFET MOSFET TYPE MTP3055E VDSS 60 V RDS(on) ID < 0.15 a 12 A TYPICAL RDS(on) = 0.1 Q AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF MTP3055E 1Q-12A O-220

    Untitled

    Abstract: No abstract text available
    Text: MTP3055E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D)10 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)70# Minimum Operating Temp (øC)


    Original     		PDF MTP3055E

    Untitled

    Abstract: No abstract text available
    Text: MTP3055AFI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)


    Original     		PDF MTP3055AFI

    TO-220AB

    Abstract: TO-220 package thermal resistance transistor TB 410 AN569 MTP3055VL
    Text: MTP3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel TO−220 http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP3055VL O-220 MTP3055VL/D TO-220AB TO-220 package thermal resistance transistor TB 410 AN569 MTP3055VL

    MTP3055

    Abstract: MTP3055V AN569
    Text: MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP3055V r14525 MTP3055V/D MTP3055 MTP3055V AN569

    AN569

    Abstract: MTP3055VL DSA00107673
    Text: MTP3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP3055VL r14525 MTP3055VL/D AN569 MTP3055VL DSA00107673

    MTP3055E

    Abstract: MTP3055EFI
    Text: MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E MTP3055EFI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.15 Ω < 0.15 Ω 14 A 10 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF MTP3055E MTP3055EFI 100oC 175oC O-220 ISOWATT220 MTP3055E MTP3055EFI

    MTP3055E

    Abstract: MTP3055E power supply schematic diagram dc-dc
    Text: MTP3055E  N - CHANNEL 60V - 0.1Ω - 12A -TO-220 STripFET POWER MOSFET T YPE V DSS R DS o n ID MTP3055E 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE


    Original     		PDF MTP3055E -TO-220 175oC O-220 20oelectronics. MTP3055E MTP3055E power supply schematic diagram dc-dc

    Untitled

    Abstract: No abstract text available
    Text: MTP3055EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)26 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-65


    Original     		PDF MTP3055EL

    TMOS E-FET

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP3055VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP3055VL Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM


    Original     		PDF MTP3055VL/D MTP3055VL MTP3055VL/D* TMOS E-FET

    MTP3055V

    Abstract: TMOS E-FET transistor MJ 122
    Text: MOTOROLA Order this document by MTP3055V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP3055V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.15 OHM


    Original     		PDF MTP3055V/D MTP3055V MTP3055V/D* MTP3055V TMOS E-FET transistor MJ 122

    MTP3055E

    Abstract: stmicroelectronics datecode TO-220
    Text: MTP3055E  N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET MOSFET T YPE MTP3055E • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE APPLICATION ORIENTED


    Original     		PDF MTP3055E O-220 175oC MTP3055E stmicroelectronics datecode TO-220

    MTP3055VL

    Abstract: No abstract text available
    Text: MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 12 A, 60 V. RDS ON = 0.18 Ω @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor


    Original     		PDF MTP3055VL MTP3055VL

    Untitled

    Abstract: No abstract text available
    Text: ¿57 S G S -T H O M S O N ¡m e ra « M TP3055E M T P 3 0 5 5 E FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V MTP3055E M TP3055EFI dss 60 V 60 V R DS on < 0.15 < 0.15 a a Id 14 A 10 A • TYPICAL RDS(on) = 0.1 Q . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF TP3055E MTP3055E TP3055EFI MTP3055E/FI ISQWATT220

    p3055v

    Abstract: TP3055V MOTOROLA 3055V
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP3055V TMOS V™ Power Field Effect Transistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e s ig n e d to a ch ie ve an o n -re s is ta n ce area prod u ct a bo u t o n e -h a lf th a t o f sta n d a rd M O SFETs. This


    OCR Scan     		PDF

    tp3055

    Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
    Text: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF MTP3055E TP3055EFI MTP3055EFI O-220 ISOWATT220 ISQWATT220 MTP3055E/FI tp3055 MTP3055EFI TP3055E TP3055EFI

    SGSP321

    Abstract: sgs*P381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153
    Text: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20*


    OCR Scan     		PDF MTP3055AFI STLT20* STLT20FI SGSP321 IRF153 IRFP153 IRFP153FI STLT30* SGSP381 SGSP481 sgs*P381 SGSP201 STLT20 STLT20FI BUZ11S2FI SGSP591

    transistor mtp3055e

    Abstract: MTP3055E-MOTOROLA T1N2 221A-06 AN569 MTP3055 MTP3055E
    Text: M OT O R O L A SC X S T R S / R F b 3 b 7 E S 4 ODTflflEl 5 ^ b&E D n o T b MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MTP3055E T M O S IV N-Channel Enhancem ent-Mode Motorola Preferred Device Pow er Field Effect Transistor This advanced " E " series of T M O S power M O S F E T s is


    OCR Scan     		PDF MTP3055E transistor mtp3055e MTP3055E-MOTOROLA T1N2 221A-06 AN569 MTP3055 MTP3055E

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055V TMOS V™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TM O S POWER FET 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


    OCR Scan     		PDF MTP3055V/D TP3055V 21A-06

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055VL TMOS V™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


    OCR Scan     		PDF MTP3055VL/D TP3055VL 21A-06

    MTP3055A

    Abstract: HI SPEED ,TO-220, TRANSISTOR MTP3055AFI ld12a ISOWATT-220 Q2060 ISOWATT220
    Text: MTP3055A MTP3055AFI / = T SGS-THOMSON *T Æ U[ » » I L I « ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on MTP3055A MTP3055AFI 60 V 60 V 0.15 ß 0.15 Q •o ' 12 A 10 A • ULTRA FAST SWITCHING - UP TO > 100KHz • LOW DRIVE ENERGY FOR EASY DRIVE


    OCR Scan     		PDF MTP3055A MTP3055AFI 100KHz 500ms HI SPEED ,TO-220, TRANSISTOR MTP3055AFI ld12a ISOWATT-220 Q2060 ISOWATT220

    3055vl motorola

    Abstract: 3055vl TP3055VL TP3055V Motorola 3055vl
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D ata S heet MTP3055VL TMOS V™ Power Field Effect Transistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate T M O S V is a n e w te c h n o lo g y d e s ig n e d to a c h ie v e a n o n - r e s is -


    OCR Scan     		PDF 3055VL 0E-05 0E-01 3055vl motorola 3055vl TP3055VL TP3055V Motorola 3055vl

    tp3055

    Abstract: TP3055E
    Text: Order this data sheet by MTP3055E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TP3055E TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor This advanced "E " series o f TMOS power MOSFETs is designed to w ithstand high energy in the avalanche and


    OCR Scan     		PDF MTP3055E/D MK145BP, C57092 MTP3055E tp3055 TP3055E