Transistor motorola 418
Abstract: MRF1500 motorola rf Power Transistor Transistor motorola 277 10-04 MOTOROLA TRANSISTOR
Text: MOTOROLA Order this document by MRF1500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1500 Motorola Preferred Device Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz
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MRF1500/D
MRF1500
MRF1500/D*
Transistor motorola 418
MRF1500
motorola rf Power Transistor
Transistor motorola 277
10-04 MOTOROLA TRANSISTOR
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MTP60N05HDL
Abstract: AN569 TRANSISTOR MOTOROLA
Text: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM
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MTP60N05HDL/D
MTP60N05HDL
MTP60N05HDL
AN569
TRANSISTOR MOTOROLA
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2SA1046
Abstract: transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers.
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BUH51
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2SA1046
transistor bc 851
NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247
2N6107 equivalent
BU326
BU108
BU100
BUL1
2N3055
BDV64
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TRANSISTOR Z4
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392
MRF392
TRANSISTOR Z4
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage
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BSV52LT1
236AB)
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2n3055 motorola
Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,
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1PHX11122C
2n3055 motorola
tip122 tip127 audio amp schematic
transistor equivalent book 2sc2238
IR640
transistor motorola 40411
TRANSISTOR REPLACEMENT GUIDE
ir431
motorola AN485
C2688
2SA1046
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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SC-7CI/SOT-323
MUN5211T1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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MUN5211T1
SC-70/SOT-323
0Cn354L|
MUN5211T1
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mun5330dw
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual B ias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5311DW1T1
OT-363
MUN5315DW1T1
MUN5316DW1T1
mun5330dw
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MTD3055E
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F bf l E T> • b3h72SM 00^0535 330 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor D PAK for Surface or Insertion Mount
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b3h72SM
MTD3055E
DGT654G
MTD3055E
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LSE B9
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Prelim inary Inform ation NPN Silicon G eneral Purpose A m plifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617
OT-416/SC-90
7-inch/3000
LSE B9
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MTD3055E
Abstract: dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage
Text: M O T O R O L A SC X S T R S / R F bflE ]> b3b72SM 00^0535 330 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor DPAK for Surface or Insertion Mount
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b3b72S4
MTD3055E
MTD3055E
dgtn
369A-10
AN569
MTD3055E1
diode zener 3144 voltage
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mbt3904lt1
Abstract: BT3904LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MMBT3904LT1 NPN Silicon M otorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector- Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Ve b o 6.0
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MMBT3904LT1
OT-23
CTO-236AB)
BT3904LT1
GT31D0
mbt3904lt1
BT3904LT1
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rohm mtbf
Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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1S211
1S22I
MRF20030
rohm mtbf
kermet case b
bd136 equivalent
933 TRANSISTOR
SILICON PNP POWER TRANSISTOR b 861
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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transistor bd135
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
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TP3032
TP3032
BD135
transistor bd135
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MTPG
Abstract: MTPG0
Text: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET Pow er Field E ffe c t Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM
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MTP60N05HDL/D
MTPG
MTPG0
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35 W 960 MHz RF POWER TRANSISTOR NPN
Abstract: TP3034 2779, transistor transistor j8 j8 er capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3034 The RF Line NPN Silicon RF Power Transistor The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and
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TP3034
TP3034
35 W 960 MHz RF POWER TRANSISTOR NPN
2779, transistor
transistor j8
j8 er capacitor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power TVansistor The TP3022B is designed for com mon-emitter operation in the 900 MHz m obile radio band. Use of gold m e tallization and silicon diffused ballast resistors results in a m edium power output/driver transistor with state-of-the-art
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TP3022B
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a331j
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor T h e M R F 6 4 0 4 is d e s ig n e d fo r 2 6 v o lts m ic ro w a v e larg e sig n a l, c o m m o n em itte r, cla ss A B lin e a r a m p lifie r a p p lic a tio n s o p e ra tin g in th e ra ng e 1.8 to
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MRF6404
a331j
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Untitled
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor T h e T P 3 0 2 4 B is a b a la n ce d tra n s is to r d e sig n e d s p e cific a lly fo r use in ce llu la r ra dio syste m s. T h is d e vice p e rm its th e d esig n of a C la s s A B p u sh -p u ll, high
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TP3024B
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transistor 313 smd
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor T h e M R F 6 4 0 1 is d e s ig n e d fo r C la s s A c o m m o n e m itte r, lin e a r p o w e r a m p lifie rs in th e 1 . 0 - 2 . 0 G H z fre q u e n c y ra n g e . It h a s b e e n s p e c ific a lly
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IS22I
MRF6401
transistor 313 smd
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12 volt dc to 220 volt ac inverter 1000 watts
Abstract: 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit
Text: BIPOLAR TRANSISTORS EXCEL IN OFF-LINE RESONANT CONVERTERS Prepared by Jim Spangler, Applications Engineer Motorola Semiconductor Products Inc Phoenix, Az. Reprinted with permission of POWERTECHNICS, March, 1986 issue. 1986 Darnell Research Inc. All rights reserved.
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AR181/D
12 volt dc to 220 volt ac inverter 1000 watts
220 ac INVERTER without transformer
12 VOLTS INVERTER CIRCUIT USING MOSFET
osram transistor Electronic ballast
AR181
FULL WAVE RECTIFIER CIRCUITS 220 AC
motorola AR181
Motorola Bipolar Transistor BOOK
osram ballast circuit
12 volt ac to dc bridge rectifier circuit
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