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    TRANSISTOR MOTOROLA 277 Search Results

    TRANSISTOR MOTOROLA 277 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MOTOROLA 277 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor motorola 418

    Abstract: MRF1500 motorola rf Power Transistor Transistor motorola 277 10-04 MOTOROLA TRANSISTOR
    Text: MOTOROLA Order this document by MRF1500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1500 Motorola Preferred Device Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz


    Original     		PDF MRF1500/D MRF1500 MRF1500/D* Transistor motorola 418 MRF1500 motorola rf Power Transistor Transistor motorola 277 10-04 MOTOROLA TRANSISTOR

    MTP60N05HDL

    Abstract: AN569 TRANSISTOR MOTOROLA
    Text: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM


    Original     		PDF MTP60N05HDL/D MTP60N05HDL MTP60N05HDL AN569 TRANSISTOR MOTOROLA

    2SA1046

    Abstract: transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers.


    Original     		PDF BUH51 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SA1046 transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64

    TRANSISTOR Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392 MRF392 TRANSISTOR Z4

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage


    Original     		PDF BSV52LT1 236AB)

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


    Original     		PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    OCR Scan     		PDF SC-7CI/SOT-323 MUN5211T1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    OCR Scan     		PDF MUN5211T1 SC-70/SOT-323 0Cn354L| MUN5211T1

    mun5330dw

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual B ias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


    OCR Scan     		PDF MUN5311DW1T1 OT-363 MUN5315DW1T1 MUN5316DW1T1 mun5330dw

    MTD3055E

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F bf l E T> • b3h72SM 00^0535 330 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor D PAK for Surface or Insertion Mount


    OCR Scan     		PDF b3h72SM MTD3055E DGT654G MTD3055E

    LSE B9

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Prelim inary Inform ation NPN Silicon G eneral Purpose A m plifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.


    OCR Scan     		PDF 2SC4617 OT-416/SC-90 7-inch/3000 LSE B9

    MTD3055E

    Abstract: dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage
    Text: M O T O R O L A SC X S T R S / R F bflE ]> b3b72SM 00^0535 330 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor DPAK for Surface or Insertion Mount


    OCR Scan     		PDF b3b72S4 MTD3055E MTD3055E dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage

    mbt3904lt1

    Abstract: BT3904LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MMBT3904LT1 NPN Silicon M otorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector- Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Ve b o 6.0


    OCR Scan     		PDF MMBT3904LT1 OT-23 CTO-236AB) BT3904LT1 GT31D0 mbt3904lt1 BT3904LT1

    rohm mtbf

    Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


    OCR Scan     		PDF 1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    transistor bd135

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON


    OCR Scan     		PDF TP3032 TP3032 BD135 transistor bd135

    MTPG

    Abstract: MTPG0
    Text: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET Pow er Field E ffe c t Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM


    OCR Scan     		PDF MTP60N05HDL/D MTPG MTPG0

    35 W 960 MHz RF POWER TRANSISTOR NPN

    Abstract: TP3034 2779, transistor transistor j8 j8 er capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3034 The RF Line NPN Silicon RF Power Transistor The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


    OCR Scan     		PDF TP3034 TP3034 35 W 960 MHz RF POWER TRANSISTOR NPN 2779, transistor transistor j8 j8 er capacitor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power TVansistor The TP3022B is designed for com mon-emitter operation in the 900 MHz m obile radio band. Use of gold m e tallization and silicon diffused ballast resistors results in a m edium power output/driver transistor with state-of-the-art


    OCR Scan     		PDF TP3022B

    a331j

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor T h e M R F 6 4 0 4 is d e s ig n e d fo r 2 6 v o lts m ic ro w a v e larg e sig n a l, c o m m o n em itte r, cla ss A B lin e a r a m p lifie r a p p lic a tio n s o p e ra tin g in th e ra ng e 1.8 to


    OCR Scan     		PDF MRF6404 a331j

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor T h e T P 3 0 2 4 B is a b a la n ce d tra n s is to r d e sig n e d s p e cific a lly fo r use in ce llu la r ra dio syste m s. T h is d e vice p e rm its th e d esig n of a C la s s A B p u sh -p u ll, high


    OCR Scan     		PDF TP3024B

    transistor 313 smd

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor T h e M R F 6 4 0 1 is d e s ig n e d fo r C la s s A c o m m o n e m itte r, lin e a r p o w e r a m p lifie rs in th e 1 . 0 - 2 . 0 G H z fre q u e n c y ra n g e . It h a s b e e n s p e c ific a lly


    OCR Scan     		PDF IS22I MRF6401 transistor 313 smd

    12 volt dc to 220 volt ac inverter 1000 watts

    Abstract: 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit
    Text: BIPOLAR TRANSISTORS EXCEL IN OFF-LINE RESONANT CONVERTERS Prepared by Jim Spangler, Applications Engineer Motorola Semiconductor Products Inc Phoenix, Az. Reprinted with permission of POWERTECHNICS, March, 1986 issue. 1986 Darnell Research Inc. All rights reserved.


    OCR Scan     		PDF AR181/D 12 volt dc to 220 volt ac inverter 1000 watts 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit