TRANSISTOR MMBT3904LT1 Search Results

TRANSISTOR MMBT3904LT1 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR MMBT3904LT1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3904LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =40V 0.38Ref. MINO.1 0.124±0.10 2 Collector Dissipation:Pc=225mW	Original	MMBT3904LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3906LT1. MMBT3904LT1 MMBT3906LT1	PDF
2n3904 transistor Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP Text: TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with	Original	2N3904 O--92 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz 2n3904 transistor 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP	PDF
Untitled Abstract: No abstract text available Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter	Original	OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA	PDF
TRANSISTOR MMBT3904LT1 Abstract: MMBT3906LT1 MMBT3904LT1 Text: MMBT3904LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3906LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	MMBT3904LT1 MMBT3906LT1 225mW OT-23 TRANSISTOR MMBT3904LT1 MMBT3906LT1 MMBT3904LT1	PDF
TRANSISTOR MMBT3904LT1 Abstract: No abstract text available Text: MMBT3906LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3904LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	MMBT3906LT1 MMBT3904LT1 225mW OT-23 TRANSISTOR MMBT3904LT1	PDF
Untitled Abstract: No abstract text available Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES ● As complementary type, the NPN transistor MMBT3904LT1 is Recommended ● Epitaxial planar die construction MAXIMUM RATINGS* TA=25 unless otherwise noted	Original	OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA MMBT3906LT1 100MHz -10mA,	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is	Original	2N3904 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz	PDF
Untitled Abstract: No abstract text available Text: 2N3904 Plastic-Encapsulate Transistors NPN TO—92 Features •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with	Original	2N3904 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz	PDF
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 0.97Ref. PNP Epitaxial Silicon Transistor 0.38Ref. MINO.1 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 3 0.124±0.10 2 Collector Dissipation:Pc=225mW	Original	MMBT3906LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3904LT1. -10mA 100MHz 300uS MMBT3904LT1 MMBT3906LT1	PDF
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3904LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 1.3±0.2 1.9 Collector-Emitter Voltage: V CEO =40V 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 2 Collector Dissipation:Pc=225mW 0.5Ref. 0.38Ref. MINO.1 0.124±0.10 0.5Ref. Complementary Pair with MMBT3906LT1.	Original	MMBT3904LT1 OT-23 OT-23 97Ref. 225mW 38Ref. MMBT3906LT1. 100MHz 300uS MMBT3904LT1 MMBT3906LT1	PDF
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 3 0.97Ref. 1 PNP Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 0.38Ref. MINO.1 0.124±0.10 2 Collector Dissipation:Pc=225mW	Original	MMBT3906LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3904LT1. MMBT3904LT1 MMBT3906LT1	PDF
70V AC to 48v dc 40 amp converter circuit diagram Abstract: No abstract text available Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode	Original	LT3781 350kHz 300kHz LT3710 LTC3728 550kHz, 3781f 70V AC to 48v dc 40 amp converter circuit diagram	PDF
GHM3045 Abstract: FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3 Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller U FEATURES DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode	Original	LT3781 350kHz LTC1929 300kHz LT3710 LTC3728 550kHz, 3781f GHM3045 FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3	PDF

MMBT3904LT1 Abstract: MMBT3906LT1 MMBT3906LT1 semtech Text: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage	Original	MMBT3906LT1 MMBT3904LT1 OT-23 100mA MMBT3906LT1 MMBT3906LT1 semtech	PDF
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage	Original	MMBT3906LT1 MMBT3904LT1 OT-23 100mA MMBT3906LT1	PDF
1N916 Abstract: MMBT3904LT1 Text: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc	Original	MMBT3904LT1 r14525 MMBT3904LT1/D 1N916 MMBT3904LT1	PDF
1N916 Abstract: MMBT3904LT1 Text: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0	Original	MMBT3904LT1 r14525 MMBT3904LT1/D 1N916 MMBT3904LT1	PDF
transistor marking 1am Abstract: No abstract text available Text: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0	Original	MMBT3904LT1 transistor marking 1am	PDF
MMBT3904LT3G Abstract: MMBT3904LT1 1AM 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage	Original	MMBT3904LT1 MMBT3904LT1/D MMBT3904LT3G MMBT3904LT1 1AM 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3	PDF
1AM sot 23 Abstract: 1am surface mount diode 1N916 MMBT3904LT1 motorola MMBT3904LT1 Text: MOTOROLA Order this document by MMBT3904LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MMBT3904LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage	Original	MMBT3904LT1/D MMBT3904LT1 MMBT3904LT1/D* 1AM sot 23 1am surface mount diode 1N916 MMBT3904LT1 motorola MMBT3904LT1	PDF
MMBT3904LT1 Abstract: TRANSISTOR MMBT3904LT1 MMBT3906LT1 rs1kohms Text: MMBT3904LT1 NPN Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the PNP transistors MMBT3906LT1 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC	Original	MMBT3904LT1 MMBT3906LT1 OT-23 MMBT3904LT1 TRANSISTOR MMBT3904LT1 rs1kohms	PDF
mbt3904lt1 Abstract: BT3904LT1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MMBT3904LT1 NPN Silicon M otorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector- Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Ve b o 6.0	OCR Scan	MMBT3904LT1 OT-23 CTO-236AB) BT3904LT1 GT31D0 mbt3904lt1 BT3904LT1	PDF
MMBT3904LT3G Abstract: 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 1AM 6 marking code 1AM Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage	Original	MMBT3904LT1 MMBT3904LT1/D MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 1AM 6 marking code 1AM	PDF

TRANSISTOR MMBT3904LT1 Search Results

TRANSISTOR MMBT3904LT1 Result Highlights (5)

TRANSISTOR MMBT3904LT1 Datasheets Context Search

MMBT3904LT1

2n3904 transistor

Untitled

TRANSISTOR MMBT3904LT1

TRANSISTOR MMBT3904LT1

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MMBT3904LT1

MMBT3904LT1

MMBT3904LT1

70V AC to 48v dc 40 amp converter circuit diagram

GHM3045

MMBT3904LT1

MMBT3904LT1

1N916

1N916

transistor marking 1am

MMBT3904LT3G

1AM sot 23

MMBT3904LT1

mbt3904lt1

MMBT3904LT3G